U.S. Philips Corporation

John C Brice

John M Robertson

Colin R Brough

Peter A Whiffin

James E Curran

Ronald George Pratt

John E Davies

John Lincoln Page

Owen F Hill

In a sliding boat liquid phase epitaxy apparatus a base structure, a support substrate disposed on the base and being horizontally fixed with respect to the base, and a slidable well member disposed above the substrate in an abutting relationship are included. The slidable well member has at least one well capable of holding a growth solution for growing epitaxial layers on substrates. A significant problem in growth of layers by liquid phase epitaxy when using a sliding boat apparatus occurs by the inability to achieve a sufficiently good wipe-off so as to produce a layer having a smooth surface. The apparatus of the present invention includes in the structure of a sliding boat apparatus a substrate support structure including a block provided with a flat-bottom recess in part of the top surface of the block and between the ends of the blocks, and a plate is fitted into the recess so that the top surface of the plate is level with the top surface of the block outside of the recess. The plate is provided with an aperture capable of containing a substrate on which an epitaxial layer is to be grown, and can be disposed under one well of the slidable well member. The plate and well member are made of different materials.

Liquid phase epitaxy apparatus

It is necessary in many heat treatment processes conducted in open systems to maintain a given partial pressure of a volatile component of a material being treated, and it is desirable to conserve this volatile component, both on account of cost and in the case of components such as mercury, toxicity. A controlled unsaturated vapor pressure of a volatile liquid 28 may be produced in a tube 3 by passing a stream of a carrier gas through a vaporizer 4 containing the liquid 28 at a temperature T.sub.s, passing the mixture of the carrier gas and vapor of the liquid 28 through a tube 3 containing material 29 to be treated, which material 29 is at a temperature T.sub.t. The mixture of the carrier gas and vapor of the liquid 28 is then passed to a condenser 6 from which the carrier gas is vented to waste, and the vapor of the liquid 28 is condensed at a temperature T.sub.c in the condenser 6. T.sub.t &gt;T.sub.s &gt;T.sub.c. The condensate passes from the condenser 6 to the vaporizer 4 through a tube 12, and the liquid 28 fills a cross-section of a length of the tube 12.

Method of and apparatus for producing a controlled unsaturated vapor

A method is set forth for simultaneously preparing a plurality of castings of a solution of an element, or compound, in a solvent, which solvent may also be an element and/or a compound. The solution is saturated at a temperature T.sub.s. A problem in liquid epitaxy growth processes is the simple preparation of growth charges of sufficient reproducible composition and size to produce epitaxial layers of reproducible composition and thickness. The present invention provides a melt consisting of the solvent, of the solvent together with at least one constituent of the solution, or of a solution which is unsaturated at the temperature T.sub.s, which melt is prepared in a boat body of a liquid-tight boat assembly. An equilibrium is established at T.sub.s between the melt and a solid body having an excess of any constituent in which the melt is deficient with respect to the saturated solution so as to form the saturated solution. The saturated solution is transferred into a plurality of moulds in which the solution is allowed to solidify to form the castings. The solid body is contained in a solid-retaining portion of a trough of the boat body, which portion is separated from the remainder of the trough by an apertured partition.

Method of preparing a plurality of castings having a predetermined

A piezoelectric device comprising a housing that contains a piezoelectric body bearing aluminum film electrodes. The exposed surfaces of the electrodes bear a passivating layer of amorphous aluminum oxide formed by heating the electrodes at a temperature between 250.degree. and 550.degree. C. in an atmosphere containing free oxygen.

Electrode piezoelectric devices including surface wave devices

Method of growing single crystal of bismuth silicon oxide from a melt of Bi.sub.x Si O.sub.1.5x+2, in an oxygen containing atmosphere. At the start of crystallization, x has a value of 11.55 to 11.82 or 12.35 to 14.00. The value of x does not have a spread of more than 0.025 throughout the crystal.

Growth of single crystal bismuth silicon oxide

A method of growing monocrystalline bismuth rare earth iron garnet, either as a single crystal or as an epitaxial layer, from a solution containing composing components of the garnet together with a flux. The flux consists essentially of a mixture of Bi.sub.2 O.sub.3 and RO.sub.2, wherein R is at least one of the elements Si, Ge, Ti, Sn, Zr, Ce and Te, wherein the system Bi.sub.2 O.sub.3 --RO.sub.2 includes a eutectic composition having a eutectic temperature which is below the melting temperature of pure Bi.sub.2 O.sub.3. By using these Bi.sub.2 O.sub.3 --RO.sub.2 fluxes, the monocrystalline garnets produced have lower optical absorption coefficients at, for example 5100 A and 5600 A than similar garnets grown using lead-containing fluxes. Furthermore higher growth rates and higher growth temperatures are possible when using the Bi.sub.2 O.sub.3 --RO.sub.2 fluxes rather than lead-containing fluxes.

Method of growing single crystals of rare earth metal iron garnet

A method of growing a monocrystalline bismuth rare earth iron garnet material from a melt in which a flux containing bismuth oxide and an alkali metal oxide is employed.

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Copthorne Bank, United Kingdom

John C Brice