Osram Oled Gmbh

Osram Opto Semiconductors Gmbh

John Brückner

Sven Gerhard

Alfred Lell

Muhammad Ali

Georg Brüderl

Thomas Adlhoch

Andreas Löffler

André Somers

Urs Heine

Lars Nähle

A semiconductor laser includes a substrate having a semiconductor layer sequence with an active layer that generates light during operation of the semiconductor laser, and a contact layer on a bottom side of the substrate opposite the semiconductor layer sequence, wherein the contact layer has at least one first partial region and at least one second partial region which are formed contiguously, the at least one first partial region is annealed, and the at least one second partial region is unannealed.

Method of producing a semiconductor laser and semiconductor laser

A method for singulating semiconductor components () is specified, said method comprising the steps of providing a carrier (), applying at least two semiconductor chips () on the carrier (), etching at least one break nucleus () at a side of the carrier () facing the semiconductor chips (), and singulating at least two semiconductor components () by breaking the carrier () along the at least one break nucleus (). The at least one break nucleus () extends at least in places in a vertical direction (z), the vertical direction (z) being perpendicular to a main extension plane of the carrier (), and the at least one break nucleus () is arranged between the two semiconductor chips () in a lateral direction (x), the lateral direction (x) being parallel to the main extension plane of the carrier (). Further, each of the semiconductor components () comprises at least one of the semiconductor chips (), and the expansion of the at least one break nucleus () in the vertical direction (z) is at least% of the expansion of the carrier () in the vertical direction (z). Furthermore, a semiconductor component () is specified.

Method for manufacturing optoelectric semiconductor component and optoelectric semiconductor component device

A method of producing a plurality of laser diodes includes providing a plurality of laser bars in a composite, wherein the laser bars each include a plurality of laser diode elements arranged side by side, and the laser diode elements include a common substrate and a semiconductor layer sequence arranged on the substrate, and a division of the composite at a longitudinal separation plane extending between two adjacent laser bars leads to formation of laser facets of the laser diodes to be produced, and structuring the composite at at least one longitudinal separation plane, wherein a structured region is produced in the substrate.

Method of producing a plurality of laser diodes and laser diode

A method of manufacturing a semiconductor laser including providing a substrate having a semiconductor layer sequence with an active layer that generates light during operation of the semiconductor laser, applying a continuous contact layer having at least one first partial region and at least one second partial region on a bottom side of the substrate opposite the semiconductor layer sequence, and locally annealing the contact layer only in the at least one first partial region.

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Wuppertal, Germany

John Brückner