Varian Semiconductor Equipment Associates, Inc.

John (Bon-Woong) Koo

Ludovic Godet

Frank Sinclair

Peter F Kurunczi

Jonathan Gerald England

Wilhelm P Platow

D Jeffrey Lischer

Shardul Patel

Rajesh Dorai

An ion implantation system for neutralizing the space charge effect associated with a high current low energy ion beam. The implantation system includes an ion source configured to receive a dopant gas and generate ions having a particular energy and mass from which ions are extracted through an aperture. A work piece positioned downstream of the ion source for receiving the extracted ions in the form of an ion beam. A bleed gas channel disposed between the ion source and the work piece. The bleed gas channel supplying a gas used to neutralize the space charge effect associated with the ion beam.

Method and apparatus for controlling beam current uniformity in an ion implanter

Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: introducing a plurality of first particles to a first region of the substrate so as to form at least one crystal having a grain boundary in the first region without forming another crystal in a second region, the second region adjacent to the first region; and extending the grain boundary of the at least one crystal formed in the first region to the second region after stopping the introducing the plurality of first particles.

Particle beam assisted modification of thin film materials

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Andover, MA, United States of America

John (Bon-Woong) Koo