General Electric Company

John Benjamin

David W Tong

William R Van Dell

William R VanDell

Walking cane

A process for depositing oxygen doped semi-insulating polycrystalline silicon (SIPOS) as a passivation layer over the junction of a semiconductor silicon substrate in which the substrate is subjected to an oxygen removal step immediately prior to the creation of the SIPOS layer to thereby prevent the creation of an oxide layer at the interface between the SIPOS and the substrate.

Passivation with a low oxygen interface

A method for manufacturing a silicon wafer includes growing a layer of low-resistivity crystalline silicon upon a precision-ground slice of single-crystal, high-resistivity silicon. The slice of single-crystal silicon has a thickness sufficient to withstand handling during the initial part of the processing. The crystalline silicon is built up to a thickness which is sufficient to withstand handling and processing of the finished wafer. The layer of single-crystal silicon is thereupon precision ground to reduce its final thickness to a value required for the devices to be formed thereon. The crystalline layer performs gettering to remove impurities from the single-crystal silicon during normal heating attendant to the formation of the solid-state devices thereon. The present invention further includes a silicon wafer made by the process of the invention.

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New York, NY, United States of America

John Benjamin