International Business Machines Corporation

Globalfoundries Inc.

John B DeForge

Kirk David Peterson

Terence B Hook

John J Ellis-Monaghan

Saravanan Sethuraman

Diyanesh B Chinnakkonda Vidyapoornachary

Sridhar H Rangarajan

Andrew A Turner

Theresa Newton

Warren Edward Maule

Herbert Lei Ho

Babar Ali Khan

Erik L Hedberg

Endre P Thoma

Steven Michael Eustis

Nathaniel R Chadwick

David E Douse

Jennifer E Appleyard

Susan M Litten

Jeffrey P Gambino

JunJun Li

John Edward Barth, Jr

Igor Arsovski

William Vincent Huott

Alain F Loiseau

Marc Douglas Knox

Daniel Rodko

Ezra D B Hall

Uma Srinivasan

John E Barth

Bassem M Hamieh

Ezra D Hall

Timothy Meehan

Hyong Uk Kim

Michelle E Finnefrock

A system may include an integrated circuit having repair select bits coupled with a central repair register. The repair register may be configured to determine how to broadcast multiple repair actions to a group of repairable circuits. Inclusion of the repair register may function to reduce the total number of latches used to hold repair information.

Microchip level shared array repair

A method and performance-screen ring oscillator (PSRO) test structure for designing, testing, and manufacturing a VLSI device. The performance-screen ring oscillator (PSRO) test structure comprises a ring oscillator having a plurality of stages; one or more selectable loads, each selectable load being coupled to an output of a corresponding one of the stages of the ring oscillator; and one or more multiplexers, each multiplexer being coupled to at least one stage of the ring oscillator and being configured to select a configuration of the corresponding selectable load.

Performance-screen ring oscillator with switchable features

After printing common features from a primary mask into a photoresist layer located over a substrate, a functional feature which is suitable for changing functionalities or the configurations of the common features according to a chip design is selected from a library of additional functional features in a secondary mask. The selected functional feature from the secondary mask is printed into the photoresist layer to modify the common features that already exist in the photoresist layer. The selection and printing of functional feature processes can be repeated until a final image corresponding to the chip design is obtained in the photoresist layer.

Method and structures for personalizing lithography

Optimizing error correcting code (ECC) in three-dimensional (3D) stacked memory including selecting, as an ECC memory chip, a memory chip of a plurality of memory chips in a 3D stacked memory structure, wherein the 3D stacked memory structure comprises the plurality of memory chips stacked vertically and coupled together using through-silicon vias; determining that an error has been detected in one of the plurality of memory chips in the 3D stacked memory structure; selecting, based on the detected error, an order of an ECC decoder of the ECC stored in the ECC memory chip; and correcting the detected error in the 3D stacked memory structure using the ECC stored in the ECC memory chip.

Optimizing error correcting code in three-dimensional stacked memory

An aspect includes receiving a request to write data to a memory that includes a stack of memory devices, each of the memory devices communicatively coupled to at least one other of the memory devices in the stack via a through silicon via (TSV). The write request is received by a hypervisor from an application executing on a virtual machine managed by the hypervisor. In response to receiving the request a latency requirement of accesses to the write data is determined. A physical location on a memory device in the stack of memory devices is assigned to the write data based at least in part on the latency requirement and a position of the memory device in the stack of memory devices. A write command that includes the physical location and the write data is sent to a memory controller.

Three-dimensional stacked memory optimizations for latency and power

An aspect includes receiving a request to access one or more memory devices in a stack of memory devices in a memory. Each of the memory devices are communicatively coupled to at least one other of the memory devices in the stack via a through silicon via (TSV). A current operating mode of the memory is determined in response to receiving the request. Based at least in part on the current operating mode of the memory being a first mode, a chip select switch is activated to provide access to exactly one of the memory devices in the stack of memory devices. Based at least in part on the current operating mode of the memory being a second mode, the chip select switch is activated to access all of the memory devices in the stack in parallel. The request is serviced using the activated chip select switch.

Three-dimensional stacked memory access optimization

Embodiments are directed to a semiconductor wafer having on-wafer circuitry. The on-wafer circuitry includes functional circuitry and first drive circuitry communicatively coupled to the functional circuitry. The on-wafer circuitry further includes test-only circuitry communicatively coupled to the functional circuitry, along with second drive circuitry communicatively coupled to the test-only circuitry. The control circuitry is communicatively coupled to the second drive circuitry and the test-only circuitry, wherein the first drive circuitry is configured to drive the functional circuitry in a first manner, and wherein the control circuitry is configured to control the second drive circuitry to drive the test-only circuitry in a second manner that is independent of the first manner.

Independently driving built-in self test circuitry over a range of operating conditions

A method fabricates a lateral non-volatile storage cell. The lateral non-volatile storage cell includes a first transistor including a first transistor body formed on a dielectric layer. The first transistor includes a source region and drain region on opposite sides of the first transistor body. A second transistor is laterally adjacent to the first transistor and includes a second transistor body, parallel with the first transistor body, formed on the dielectric layer. A first layer of gate oxide of a first thickness is formed over the first transistor body, and a second layer of gate oxide of a second thickness is formed over a portion of the second transistor body. The first thickness and the second thickness are different. A floating gate is formed over the first layer of gate oxide, the second layer of gate oxide, and the dielectric layer.

Lateral non-volatile storage cell

An approach for monitoring electrostatic discharge (ESD) event of an integrated circuit. The approach includes a canary device for exhibiting an impedance shift when affected by an ESD pulse, wherein circuit drain of the canary device is connected to an input terminal of the circuit structure. The approach further includes circuit source and logic gates of the canary device, connected to a circuit drain of ESD transistor of the circuit structure, wherein circuit source of the ESD transistor is connected to an output terminal of the circuit structure. The approach further includes a logic gate of the ESD transistor, connected to an enable signal of the circuit structure, and wherein the enable signal is connected to the output terminal through a capacitor of the circuit structure. In addition, the enable signal is also connected to the input terminal through a resistor of the circuit structure.

On chip electrostatic discharge (ESD) event monitoring

Methods, systems, and structures for stress balancing field effect transistors subject to bias temperature instability-caused threshold voltage shifts. A method includes characterizing fatigue of a location in a memory array by skewing a bit line voltage of the location. The method also includes determining that the location is unbalanced based on the characterizing. Further, the method includes inverting a logic state of the location. Additionally, the method includes changing a value of an inversion indicator corresponding to the location.

Stress balancing of circuits

A test circuit including a light activated test connection in a semiconductor device is provided. The light activated test connection is electrically conductive during a test of the semiconductor device and is electrically non-conductive after the test.

Light activated test connections

A semiconductor structure is disclosed in which, in an embodiment, a first substrate includes at least one buried plate disposed in an upper part of the first substrate. Each of the at least one buried plate includes at least one buried plate contact, and a plurality of deep trench capacitors disposed about the at least one buried plate contact. A first oxide layer is disposed over the first substrate. The deep trench capacitors and buried plate contacts in the first substrate may be accessed for use in a variety of memory and decoupling applications.

Creating deep trenches on underlying substrate

A semiconductor structure and method of fabricating the same are disclosed. In an embodiment, the structure includes a first substrate having a buried plate or plates in the substrate. Each buried plate includes at least one buried plate contact, and a plurality of deep trench capacitors disposed about the at least one buried plate contact. A first oxide layer is disposed over the first substrate. The deep trench capacitors and buried plate contacts in the first substrate may be accessed for use in a variety of memory and decoupling applications.

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Barre, VT, United States of America

John B DeForge