Air Products and Chemicals, Inc.

Versum Materials Us, LLC

John Anthony Thomas Norman

Xinjian Lei

David A Roberts

Sergei Vladimirovich Ivanov

Daniel P Spence

Yoshihide Senzaki

Melanie K Perez

Manchao Xiao

Mark Leonard O'Neill

Raymond Nicholas Vrtis

Arthur Kenneth Hochberg

Jean Louise Vincent

Aaron Scott Lukas

Hansong Cheng

Diwakar Garg

Eduardo Machado

Pablo Ordejon

Wade Hampton Bailey, Iii

Morteza Farnia

Melanie Anne Boze

Robert K Pinschmidt, Jr

Moo-Sung Kim

Glenn B Alers

Laura M Matz

Robert Sam Zorich

Robert McLemore Fleming

Chenggang Zhou

James Richard Thurmond

Jinping Wu

Bo Han

Iii Wade Hampton Bailey

A composition comprising dihydropyrazinyl anions that can be coordinated as 6 electron ligands to a broad range of different metals to yield volatile metal complexes for ALD and CVD depositions are described herein. Also described herein are undeprotonated dihydropyrazines that can coordinate to metals as stabilizing neutral ligands. In one embodiment, the composition is used for the direct liquid injection delivery of the metal dihydropyrazinyl complex precursor to the chamber of an ALD or CVD chamber for the deposition of metal-containing thin films such as, for example, ruthenium or cobalt metal films.

Volatile dihydropyrazinly and dihydropyrazine metal complexes

Metal imidazolate complexes are described where imidazoles ligands functionalized with bulky groups and their anionic counterpart, i.e., imidazolates are described. Compounds comprising one or more such polyalkylated imidazolate anions coordinated to a metal or more than one metal, selected from the group consisting of alkali metals, transition metals, lanthanide metals, actinide metals, main group metals, including the chalcogenides, are contemplated. Alternatively, multiple different imidazole anions, in addition to other different anions, can be coordinated to metals to make new complexes. The synthesis of novel compounds and their use to form thin metal containing films is also contemplated.

Complexes of imidazole ligands

Organometallic compounds suitable for use as vapor phase deposition precursors for metal-containing films are provided. Methods of depositing metal-containing films using certain organometallic precursors are also provided. Such metal-containing films are particularly useful in the manufacture of electronic devices.

Metal-enolate precursors for depositing metal-containing films

A compound comprising one or more polyfunctionalized pyrrolyl anions coordinated to a metal selected from the group consisting of barium, strontium, magnesium, radium or calcium or mixtures thereof. Alternatively, one anion can be substituted with and a second non-pyrrolyl anion. Synthesis of the novel compounds and their use to form BST films is also contemplated.

Volatile group 2 metal precursors

Sterically hindered imidazole ligands are described, along with their synthesis, which are capable of coordinating to Group 2 metals, such as: calcium, magnesium, strontium, in an eta-5 coordination mode which permits the formation of monomeric or dimeric volatile complexes. A compound comprising one or more polysubstituted imidazolate anions coordinated to a metal selected from the group consisting of barium, strontium, magnesium, radium or calcium or mixtures thereof. Alternatively, one anion can be substituted with and a second non-imidazolate anion. Synthesis of the novel compounds and their use to form BST films is also contemplated.

Volatile imidazoles and group 2 imidazole based metal precursors

The present invention is related to a family of liquid group 4 precursors represented by the formula: (pyr*)M(OR)(OR)(OR) wherein pyr* is an alkyl substituted pyrrolyl, wherein M is group 4 metals include Ti, Zr, and Hf; wherein Rcan be same or different and selected from group consisting of linear or branched Calkyls; preferably Calkyls; Ris selected from the group consisting of Calkyls, preferably branched Calkyls substituted at 2, 5 positions to prevent the pyrrolyl coordinated to the metal center in &#x3b7;fashion; n=2, 3, 4. Most preferably the invention is directed to (2,5-di-tert-butylpyrrolyl)(tris(ethoxy)titanium, (2,5-di-tert-amylpyrrolyl)(tris(ethoxy)titanium, and (2,5-di-tert-amylpyrrolyl)(tris(iso-propoxy)titanium. The invention is also directed to (cyclopentadienyl)(2,5-di-methylpyrrolyl)(bis(ethoxy))titanium. Deposition methods using these compounds are also contemplated.

Liquid precursor for depositing group 4 metal containing films

A formulation, comprising: a) at least one metal-ligand complex, wherein one or more ligands are selected from the group consisting of &#x3b2;-diketonates, &#x3b2;-ketoiminates, &#x3b2;-ketoesterates, &#x3b2;-diiminates, alkyls, carbonyls, alkyl carbonyls, cyclopentadienyls, pyrrolyls, alkoxides, amidinates, imidazolyls, and mixtures thereof; and the metal is selected from Group 2 to 16 elements of the Periodic Table of the Elements; and, b) at least one aminoether selected from the group consisting of RRNRORNRR, RORNRR, O(CHCH)NR, RRNRN(CHCH)O, RRNRORN(CHCH)O, O(CHCH)NRORN(CHCH)O, and mixtures thereof, wherein Rare independently selected from group consisting of Clinear alkyl, Cbranched alkyl, Ccyclic alkyl, C-Caromatic, Calkylamine, Calkylaminoalkyl, Cether, C-Ccyclic ether, C-Ccyclic aminoether, and mixture thereof.

Liquid composition containing aminoether for deposition of metal-containing films

The present invention is directed to high coordination sphere Group 2 metal &#x3b2;-diketiminate compositions, such as bis(N-(2,2-methoxyethyl)-4-(2,2-methoxyethylimino)-2-penten-2-aminato) barium; and the deposition of the metals of such metal ligand compositions by chemical vapor deposition, pulsed chemical vapor deposition, molecular layer deposition or atomic layer deposition to produce Group 2 metal containing films, such as barium strontium titanate films or strontium titanate films or barium doped lanthanate as high k materials for electronic device manufacturing.

High coordination sphere group 2 metal &#x3b2;-diketiminate precursors

A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, x is from 5 to 30 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %, wherein the film has pores and a dielectric constant less than 2.6. The film is provided by a chemical vapor deposition method in which a preliminary film is deposited from organosilane and/or organosiloxane precursors and pore-forming agents (porogens) wherein the precursor is a compound of the formula R(OR)(O(O)CR)Si&#x2014;R&#x2014;SiR(O(O)CR)(OR)where Rand Rare independently H or C1 to C4 linear or branched, saturated, singly or multiply unsaturated, cyclic, partially or fully fluorinated hydrocarbon; R, Rand Rare independently C1 to C6 linear or branched, saturated, singly or multiply unsaturated, cyclic, aromatic, partially or fully fluorinated hydrocarbon, Rand Rare independently H, C1 to C6 linear or branched, saturated, singly or multiply unsaturated, cyclic, aromatic, partially or fully fluorinated hydrocarbon, n is 0 to 3, m is 0 to 3, q is 0 to 3 and p is 0 to 3, provided that n+m&#x3e;1, n+p 3, and m+q 3, wherein the porogen is selected from the group consisting of norbornadiene, alpha-terpinene, limonene, cyclooctane, and cymene. The porogens are subsequently removed to provide the porous film.

Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants

A process for preparing a multi-layer substrate is described herein. In one embodiment, the process provides a multi-layer substrate comprising a first layer and a second layer where the process comprises the steps of providing the first layer comprising a barrier area and a copper area; and depositing the second layer comprising copper onto the first layer wherein the depositing provides the second layer comprising a first thickness ranging from about 20 Angstroms to about 2,000 Angstroms onto the barrier area and a second thickness ranging from about 0 Angstroms to about 1,000 Angstroms onto the copper area in the first layer wherein the first thickness is greater than the second thickness.

Process for selectively depositing copper thin films on substrates with copper and ruthenium areas via vapor deposition

Non-fluorinated copper precursors and methods for making and using same are described herein. In certain embodiments, the copper precursors described herein may be used as precursors to deposit copper films and alloys thereof on a substrate through, for example, atomic layer deposition or chemical vapor deposition conditions.

Copper precursors for thin film deposition

Novel copper alkoxide compound based ink formulations and their chemical syntheses are disclosed. The method of using the ink formulations to print conducting copper metal lines with standard ink jet printing and curing at &#x3c;150&#xb0; C. is also disclosed.

Low temperature thermal conductive inks

A process is described for depositing a metal film on a substrate surface having a diffusion barrier layer deposited thereupon. In one embodiment of the present invention, the process includes: providing a surface of the diffusion barrier layer that is substantially free of an elemental metal and forming the metal film on at least a portion of the surface via deposition by using a organometallic precursor. In certain embodiments, the diffusion barrier layer may be exposed to an adhesion promoting agent prior to or during at least a portion of the forming step. Suitable adhesion promoting agents include nitrogen, nitrogen-containing compounds, carbon-containing compounds, carbon and nitrogen containing compounds, silicon-containing compounds, silicon and carbon containing compounds, silicon, carbon, and nitrogen containing compounds, or mixtures thereof. The process of the present invention provides substrates having enhanced adhesion between the diffusion barrier layer and the metal film.

Growing community of inventors

Encinitas, CA, United States of America

John Anthony Thomas Norman