Spansion LLC.

John Anthony Darilek

Sean Michael O'Mullan

Allan Parker

Gregory Charles Yancey

Bradley Edman Sundahl

Arthur Benjamin Oliver

Mark W Randolph

Zhizheng Liu

Gulzar Ahmed Kathawala

Sung-Chul Lee

Gwyn Robert Jones

Adam Shackleton

Jacob Marcantel

Rick Anundson

Xiaojian Chu

Abhijit Raghunathan

Asif Arfi

An electronic device includes an input/output (I/O) interface and a plurality of memory elements comprising a non-volatile memory portion for storing a default firmware and a working memory portion having a firmware area. The device also includes a controller coupled to the I/O interface and the memory elements, where the controller is configured for operating the memory elements, according to the firmware area, and for monitoring the I/O interface. In the device, the controller is also configured for loading the default firmware into the firmware area when the controller is enabled and for granting access to the firmware area for loading an alternate firmware if a bypass code is detected at the I/O interface.

Field upgradable firmware for electronic devices

An electronic device is provided including an input/output (I/O) interface, a plurality of memory elements, a controller coupled to the I/O interface and the plurality of memory elements. In the device, the controller configured for operating the plurality of memory elements during a normal operating mode of the electronic device, where responsive to receiving a command for replacing a selected memory sector in the electronic device during the normal operating mode, the controller is configured for identifying one or more available spare memory sectors in the electronic device and modifying at least one memory map in the electronic device to replace the selected memory sector with the one of the available spare memory sectors.

Field programmable redundant memory for electronic devices

Providing for suppression of room temperature electronic drift in a flash memory cell is provided herein. For example, a soft program pulse can be applied to the flash memory cell immediately after an erase pulse. The soft program pulse can help to mitigate dipole effects caused by non-combined electrons and holes in the memory cell. Specifically, by utilizing a relatively low gate voltage, the soft program pulse can inject electrons into the flash memory cell proximate a distribution of uncombined holes associated with the erase pulse in order to facilitate rapid combination of such particles. Rapid combination in this manner reduces dipole effects caused by non-combined distributions of opposing charge within the memory cell, reducing room temperature program state drift.

Room temperature drift suppression via soft program after erase

Growing community of inventors

Bastrop, TX, United States of America

John Anthony Darilek