Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno

Stichting Energieonderzoek Centrum Nederland

John Anker

Evert Eugène Bende

Lambert Johan Geerligs

Maciej Krzyszto Stodolny

Yuji Komatsu

Paul Cornelis Barton

Ingrid Gerdina Romijn

Martien Koppes

Solar cell and method of manufacturing a solar cell. The solar cell has a silicon substrate () and a layer () disposed on a substrate side () of the silicon substrate (). It further has a contact structure () extending through the layer () from a cell side () of the solar cell () to the silicon substrate (). The layer () is composed of a polycrystalline silicon layer () and a tunnel oxide layer () interposed between the polycrystalline silicon layer () and the silicon substrate ().

Passivated emitter and rear contact solar cell

A semiconductor substrate () having an active region () and a first surface and a second surface facing each other. A first type of passivating layer () is present for providing an electrical contact of a first conductivity type on a part of the first surface of the semiconductor substrate (). A dielectric layer () is provided between the first type of passivating layer () and an active region () of the semiconductor substrate (). Doping of the first conductivity type is provided in a layer () of the active region () of the semiconductor substrate () near the first surface. The lateral dopant level in the layer () of the active region () near the first surface is substantially uniform.

Photovoltaic cell with passivating contact

Method of providing a boron doped region () in a silicon substrate (), includes the steps of: (a) depositing a boron doping source () over a first surface () of the substrate (); (b) annealing the substrate () for diffusing boron from the boron doping source () into the first surface (), thereby yielding a boron doped region; (c) removing the boron doping source () from at least part of the first surface (); (d) depositing undoped silicon oxide () over the first surface (); and (e) annealing the substrate () for lowering a peak concentration of boron in the boron doped region () through boron absorption by the undoped silicon oxide. The silicon oxide () acts as a boron absorber to obtain the desired concentration of the boron doped region ().

Method of providing a boron doped region in a substrate and a solar cell using such a substrate

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Petten, Netherlands

John Anker