Gte Laboratories Incorporated

John Alvin Thompson

Chan-Long Shieh

Craig A Armiento

Mark A Rothman

Alfred Joseph Negri

A heterostructure device includes a ridge-waveguide laser monolithically integrated with a ridge-waveguide rear facet monitor (RFM). An integral V-groove etched directly into the device substrate enables passive alignment of an optical fiber to the active region of the laser. The layer and RFM facets were formed using an in-situ multistep reactive ion etch process.

Method for forming a semiconductor device structure having a laser

A heterostructure device includes a ridge-waveguide laser monolithically integrated with a ridge-waveguide rear facet monitor (RFM). An integral V-groove etched directly into the device substrate enables passive alignment of an optical fiber to the active region of the laser. The laser and RFM facets were formed using an in-situ multistep reactive ion etch process.

Growing community of inventors

Bedford, MA, United States of America

John Alvin Thompson