Micron Technology Incorporated

John Aiton

John M Drynan

Joseph M Richards

J Brett Rolfson

J Brett Roltson

Patrick W Vaughn

Eugene DeLarosa

The invention includes a semiconductor construction having a wire bonding region associated with a metal-containing layer, and having radiation-imageable material over the metal-containing layer. The radiation-imageable material can be configured as a multi-level pattern having a first topographical region with a first elevational height and a second topographical region with a second elevational height above the first elevational height. The second topographical region can be laterally displaced from the bonding region by at least a lateral width of the first topographical region, with said lateral width being at least about 10 microns. Additionally, or alternatively, the elevational height of the second topographical region can be at least about 2 microns above the elevational height of the first topographical region. The invention also includes a method of forming wire bonds for semiconductor constructions in which a multi-level pattern is photolithographically formed in a radiation-imageable material (such as, for example, polyimide).

Semiconductor constructions comprising multi-level patterns of radiation-imageable material

Methods of forming wire bonds for semiconductor constructions

A reticle for use in a wafer stepper of the type in which a lens projects the image of a mask to create a lithographically-defined pattern on a wafer. The reticle includes a plurality of parallel, opaque rectangles formed therein. The rectangles are uniform in size with the width of each rectangle bearing a ratio to the distance between adjacent rectangles of approximately 4:1.

Method and apparatus for focusing a wafer stepper

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Boise, ID, United States of America

John Aiton