Cree Gmbh

Cree Research Inc.

Wolfspeed, Inc.

General Electric Company

North Carolina State University

Cree Microwave, Inc.

Ideal Industries Lighting LLC

Creeled, Inc.

General Instrument Corporation

Cree.inc.

Czee, Inc.

John Adam Edmond

David Beardsley Slater, Jr

Matthew Donofrio

Michael John Bergmann

Hua-shuang Kong

David T Emerson

Kathleen Marie Doverspike

Christopher P Hussell

Kevin Haberern

Gerald H Negley

Peter Scott Andrews

Hua-Shuang Kong

Curt Progl

Bernd P Keller

James Ibbetson

Praneet Jayant Athalye

Mark D Edmond

Bart P Reier

Paul Kenneth Pickard

Antony Paul Van De Ven

James Michael Lay

Peter E Lopez

Charles M Swoboda

Jayesh Bharathan

Jesse Colin Reiherzer

Amber Christine Salter

Ashay Chitnis

Alexander V Suvorov

Eric J Tarsa

Joseph Gates Clark

John Williams Palmour

Anwar Mohammed

Sten Heikman

Scott Thomas Allen

Bradley E Williams

Davis Andrew McClure

Heidi Marie Dieringer

Mark Raffetto

Harshad Golakia

Michelle Turner Leonard

Simon Bubel

Gary E Bulman

Ian Currier

Dale M Brown

Theodore D Lowes

Jeffrey Carl Britt

Van Mieczkowski

Brian Thibeault

Hormoz Benjamin

Eric Mayer

Vladimir A Dmitriev

Hua Shuang Kong

Nicholas William Medendorp, Jr

Richard J Saia

Ban Poh Loh

Robert F Davis

Calvin H Carter, Jr

Norbert Hiller

Raymond Rosado

Jasper S Cabalu

Nathaniel O Cannon

Elif Balkas

Winston T Parker

Mitch Jackson

Douglas G Waltz

Ed Adams

Kurt S Wilcox

Shuji Nakamura

Steven P DenBaars

Umesh Kumar Mishra

Arpan Chakraborty

Brian Thomas Collins

Michael S Leung

Sung Chul Joo

David Power

John R Rowlette, Jr

Ting Li

Zhimin Jamie Yao

Kevin Shawne Schneider

Daniel James Van Epps, Jr

Muni M Mitchell

Erin Welch

Yankun Fu

Fan Zhang

Mohammad Sedigh

Shawn Pyles

James Seruto

Iain Hamilton

Ian Hamilton

Chuck Swoboda

Roman Hamerski

Kenneth Irvine

Douglas A Asbury

David Der Chi Chang

Matthew Donofrlo

Silicon carbide (SiC) wafers and related methods are disclosed that include intentional or imposed wafer shapes that are configured to reduce manufacturing problems associated with deformation, bowing, or sagging of such wafers due to gravitational forces or from preexisting crystal stress. Intentional or imposed wafer shapes may comprise SiC wafers with a relaxed positive bow from silicon faces thereof. In this manner, effects associated with deformation, bowing, or sagging for SiC wafers, and in particular for large area SiC wafers, may be reduced. Related methods for providing SiC wafers with relaxed positive bow are disclosed that provide reduced kerf losses of bulk crystalline material. Such methods may include laser-assisted separation of SiC wafers from bulk crystalline material.

Silicon carbide wafers with relaxed positive bow and related methods

A crystalline material processing method includes forming subsurface laser damage at a first average depth position to form cracks in the substrate interior propagating outward from at least one subsurface laser damage pattern, followed by imaging the substrate top surface, analyzing the image to identify a condition indicative of presence of uncracked regions within the substrate, and taking one or more actions responsive to the analyzing. One potential action includes changing an instruction set for producing subsequent laser damage formation (at second or subsequent average depth positions), without necessarily forming additional damage at the first depth position. Another potential action includes forming additional subsurface laser damage at the first depth position. The substrate surface is illuminated with a diffuse light source arranged perpendicular to a primary substrate flat and positioned to a first side of the substrate, and imaged with an imaging device positioned to an opposing second side of the substrate.

Laser-assisted method for parting crystalline material

A method for removing a portion of a crystalline material (e.g., SiC) substrate includes joining a surface of the substrate to a rigid carrier (e.g., >800 μm thick), with a subsurface laser damage region provided within the substrate at a depth relative to the surface. Adhesive material having a glass transition temperature above 25° C. may bond the substrate to the carrier. The crystalline material is fractured along the subsurface laser damage region to produce a bonded assembly including the carrier and a portion of the crystalline material. Fracturing of the crystalline material may be promoted by (i) application of a mechanical force proximate to at least one carrier edge to impart a bending moment in the carrier; (ii) cooling the carrier when the carrier has a greater coefficient of thermal expansion than the crystalline material; and/or (iii) applying ultrasonic energy to the crystalline material.

Carrier-assisted method for parting crystalline material along laser damage region

A method for processing a crystalline substrate to form multiple patterns of subsurface laser damage facilitates subsequent fracture of the substrate to yield first and second substrate portions of reduced thickness. Multiple (e.g., two, three, or more) groups of parallel lines of multiple subsurface laser damage patterns may be sequentially interspersed with one another, with at least some lines of different groups not crossing one another. Certain implementations include formation of multiple subsurface laser damage patterns including groups of parallel lines that are non-parallel to one another, but with each line remaining within &#xb1;5 degrees of perpendicular to the &#x3c;110&#x3e; direction of a hexagonal crystal structure of a material of the substrate. Further methods involve formation of initial and subsequent subsurface laser damage patterns that are centered at different depths within an interior of a substrate, with the subsurface laser damage patterns being registered with one another and having vertical extents that are overlapping.

At least one array of LEDs (e.g., in a flip chip configuration) is supported by a substrate having a light extraction surface overlaid with at least one lumiphoric material. Light segregation elements registered with gaps between LEDs are configured to reduce interaction between emissions of different LEDs and/or lumiphoric material regions to reduce scattering and/or optical crosstalk, thereby preserving pixel-like resolution of the resulting emissions. Light segregation elements may be formed by mechanical sawing or etching to define grooves or recesses in a substrate, and filling the grooves or recesses with light-reflective or light-absorptive material. Light segregation elements external to a substrate may be defined by photolithographic patterning and etching of a sacrificial material, and/or by 3D printing.

High density pixelated LED and devices and methods thereof

A method for removing a portion of a crystalline material (e.g., SiC) substrate includes joining a surface of the substrate to a rigid carrier (e.g., &#x3e;800 &#x3bc;m thick), with a subsurface laser damage region provided within the substrate at a depth relative to the surface. Adhesive material having a glass transition temperature above 25&#xb0; C. may bond the substrate to the carrier. The crystalline material is fractured along the subsurface laser damage region to produce a bonded assembly including the carrier and a portion of the crystalline material. Fracturing of the crystalline material may be promoted by (i) application of a mechanical force proximate to at least one carrier edge to impart a bending moment in the carrier; (ii) cooling the carrier when the carrier has a greater coefficient of thermal expansion than the crystalline material; and/or (iii) applying ultrasonic energy to the crystalline material.

In one embodiment, a lamp comprises an optically transmissive enclosure. An LED array is disposed in the optically transmissive enclosure operable to emit light when energized through an electrical connection. A gas is contained in the enclosure to provide thermal coupling to the LED array. The gas may include oxygen.

Gas cooled LED lamp

Growing community of inventors

Cary, NC, United States of America

John Adam Edmond