Intel Corporation

John A Swanson

Vivek K Singh

Kumara Sastry

Bikram Baidya

Shem Ogadhoh

Mark C Phillips

Shakul Tandon

Prasad N Atkar

Allan Gu

Abde Ali Hunaid Kagalwalla

Saumyadip Mukhopadhyay

Kenny K Toh

Hale Erten

Kshitij Auluck

Kasyap Thottasserymana Vasudevan

Stephan Wagner

Helen F Parks

Lillian Chang

I-Tzu Chen

Manuj Swaroop

Mengfei Yang-Flint

Aswin Sreedhar

A method comprising identifying a set of target features for a plurality of data instances of an input data collection; determining feature values for the set of target features for the plurality of data instances; identifying a plurality of outlier data instances based on the determined feature values; identifying a plurality of noisy data instances from the outlier data instances based on feature values of the plurality of noisy data instances, wherein a noisy data instance is identified based on a determination that noise is present in noisy data instance; and providing an indication of the plurality of noisy data instances.

Automatic elimination of noise for big data analytics

Lithographic apparatuses suitable for complementary e-beam lithography (CEBL) are described. In an example, a method of forming a pattern for a semiconductor structure includes forming a pattern of parallel lines above a substrate. The method also includes aligning the substrate in an e-beam tool to provide the pattern of parallel lines parallel with a scan direction of the e-beam tool. The e-beam tool includes a column having a blanker aperture array (BAA) with a staggered pair of columns of openings along an array direction orthogonal to the scan direction. The method also includes forming a pattern of cuts or vias in or above the pattern of parallel lines to provide line breaks for the pattern of parallel lines by scanning the substrate along the scan direction. A cumulative current through the column has a non-zero and substantially uniform cumulative current value throughout the scanning.

Fill pattern to enhance ebeam process margin

A method includes identifying a first geometric pattern that failed a design rule check, identifying a second geometric pattern that passed the design rule check, morphing the first geometric pattern based on the second geometric pattern to generate a morphed geometric pattern, wherein the morphed geometric pattern passes the design rule check, and replacing the first geometric pattern with the morphed geometric pattern.

Image morphing to meet desired constraints in geometric patterns

Images are accessed representing a status in a fabrication of a semiconductor chip corresponding to a particular stage in the fabrication. Distortion is removed from the images and actual features of the semiconductor chip are extracted from the images. Synthesized ideal features of the semiconductor chip associated with completion of the particular stage in the fabrication are determined from the one or more images. The actual features are compared to the ideal features to determine whether anomalies associated with the particular stage exist in the semiconductor chip.

Unsupervised clustering to identify anomalies

Fill pattern to enhance e-beam process margin

A search engine receives data describing reference geometry and generates a hash based on the reference geometry. A reference bloom filter is generated for the reference geometry based on the hash. The search engine performs a search to determine whether instances of the reference geometry are present in an integrated circuit (IC) layout. The search includes comparing the reference bloom filter with each one of a plurality of bloom filters corresponding to a plurality of subdomains of the IC layout. Based on results of the comparison, one or more subdomains of interest are identified and searched to determine whether the particular reference geometry is present in the subdomain.

Fast pattern matching

An improved random forest model is provided, which has been trained based on silicon data generated from tests of previously fabricated chips. An input is provided to the random forest model, the input including a feature set of a pattern within a particular chip layout, the feature set identifying geometric attributes of polygonal elements within the pattern. A result is generated by the random forest model based on the input, where the result identifies a predicted attribute of the pattern based on the silicon data, and the result is generated based at least in part on determining, within the random forest model, that geometric attributes of the pattern were included in the previously fabricated chips, where the previously fabricated chips have chip layouts are different from the particular chip layout.

Random forest model for prediction of chip layout attributes

A machine readable storage medium, a method and an apparatus. The method comprises selecting a candidate set of parameters from a plurality of available parameters comprising variables that affect an outcome of a lithography process; performing a set of optimizations wherein each optimization of the set of optimizations is subject to a plurality of objectives and tolerances and a set of constraints, wherein performance of said each optimization comprises: modifying values of at least a portion of the candidate set of parameters to derive a predicted outcome for said each optimization; and determining whether a difference between the predicted outcome and an intended outcome is within an error threshold; and if the difference exceeds the error threshold, perform a subsequent optimization, and otherwise generate an input file including modified values, corresponding to a last one of the set of optimizations, for the at least a portion of the candidate set of parameters.

Adaptive algorithm to generate optical proximity correction lithographic recipe

Defective artifact removal is described in photolithography masks corrected for optical proximity. In one example a method is described in which partitions are identified in a mask design for independent optimization. The partitions are grouped and ordering into stages. The first stage is processed. Geometries are extracted from the periphery of the first stage partitions. The extracted geometries are added to the peripheries of second stage partitions. Then the second stage partitions are processed.

Defective artifact removal in photolithography masks corrected for optical proximity

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Forest Grove, OR, United States of America

John A Swanson