Crystallume Corporation

Advanced Refractory Technologies, Inc.

John A Herb

John M Pinneo

Clayton F Gardinier

Firooz Nasser-Faili

Miguel A Monreno

A method for polishing the surface of a diamond film with a low power density plasma in a reactor which comprises disposing O.sub.2 gas and a fluorinated gas such as SF.sub.6, NF.sub.3, and C.sub.2 F.sub.6 in the reactor, providing power to the reactor so that the power density in the reactor is between about 1.0 watts/cm.sup.2 and about 1.1 watts/cm.sup.2 for a first duration, and maintaining temperature in the reactor at between about 200.degree. to about 400.degree.. The method may alternatively comprise disposing a sputter gas such as Ar,O.sub.2 or N.sub.2 in the reactor, providing power to the reactor so that the power density in the reactor is between about 3.0 watts/cm.sup.2 and about 7.5 watts/cm.sup.2 for a first duration, and performing a sputter etch, disposing O.sub.2 gas and a fluorinated gas such as SF.sub.6, NF.sub.3, and C.sub.2 F.sub.6 in the reactor, and providing power to the reactor so that the power density in the reactor is between about 1.5 watts/cm.sup.2 and about 3.0 watts/cm.sup.2 for a second duration.

Method of polishing CVD diamond films by oxygen plasma

A method for growing a diamond film, substantially free of voids, having an average crystallite size greater than about 15 microns, a maximum intensity of the diamond Raman peak in counts/sec divided by the intensity of photoluminescence at 1270 cm.sup.-1 greater than about 3, a Raman sp.sup.3 full width half maximum less than about 6 cm.sup.-1, and a diamond-to-graphite Raman ratio greater than about 25, includes the steps of preparing a substrate by abrasion with diamond particles; placing the substrate in a CVD reactor; depositing diamond during a first deposition stage by providing an atmosphere consisting essentially of a mixture of about 200 sccm H.sub.2 and 10 sccm CH.sub.4, at a pressure of about 90 Torr, providing between about 1,800 and 1,950 watts of microwave power at a frequency of about 2.45 GHz to ignite and sustain a plasma in the region of said substrate, and maintaining the substrate at a temperature of between about 625.degree. C. and 675.degree. C. for a period of time sufficient to form a diamond layer which is substantially continuous; depositing a diamond during a second deposition stage by providing an atmosphere consisting essentially of a mixture of about 200 sccm H.sub.2, 4.6 sccm CO, and 9 ccm of CH.sub.4 at a pressure of about 90 Torr, providing between about 1,800 and 1,950 watts of microwave power at a frequency of between about 2.45 GHz and maintaining said substrate material at a temperature of between about 625.degree. C. and 675.degree. C. for a period of time sufficient to form a diamond layer having a desired thickness; and removing the substrate material from said CVD reactor.

Methods for producing diamond materials with enhanced heat conductivity

A carrier for a laser diode bar comprises a generally rectangularly shaped block formed from a dielectric material having a high thermal conductivity. The block includes a stepped recess formed therein having a height essentially equal to one half the height of a laser diode bar to be mounted thereon. An assembly for mounting a laser diode bar comprises a pair of carriers in contact with one another and oriented such that their stepped recesses are in facing relationship to one another. A laser diode bar is positioned between the carriers in the space left by their combined stepped recesses. A plurality of assemblies may be placed in contact with or separated from one another.

Structure and method for mounting laser diode arrays

The present invention comprises an article formed from a plurality of non-diamond particles compatible with diamond deposition preformed into a desired shape. Each of the particles has first surface regions in contact with immediately adjacent other ones of the particles, and second surface regions spaced apart from the immediately adjacent other ones of said particles to define boundaries of inter-particle voids between the immediately adjacent ones of the particles. The voids are infiltrated with high thermal conductivity CVD diamond material continuously coating the second surface regions of the particles and comprising merged growth fronts from the second surface regions of individual immediately adjacent ones of the particles into the inter-particle voids. The high thermal conductivity CVD diamond material has an average crystallite size greater than about 15 microns, an intensity ratio of diamond- Raman-peak-to-photoluminescence background intensity greater than about 20, a maximum intensity of the diamond Raman peak in counts/sec divided by the intensity of photoluminescence at 1270 cm.sup.-1 greater than about 3, a Raman sp.sup.3 full width half maximum less than about 6 cm.sup.-1 and a diamond-to-graphite Raman ratio greater than about 25. The thermal conductivity of the CVD diamond material is in excess of 17 Wcm.sup.-1 K.sup.-1.

Diamond/non-diamond materials with enhanced thermal conductivity

A CVD diamond material, substantially free of voids, has an average crystallite size greater than about 15 microns, a maximum intensity of the diamond Raman peak in counts/sec divided by the intensity of photoluminescence at 1270 cm.sup.-1 greater than about 3, a Raman sp.sup.3 full width half maximum less than about 6 cm.sup.-1 and a diamond-to-graphite Raman ratio greater than about 25. The diamond material may also comprise carbon atoms with a C.sup.13 content less than 0.05 atomic %.

High thermal conductivity diamond/non-diamond composite materials

A diamond film having an intensity ratio of diamond-Raman-peak-to-photoluminescence background intensity greater than about 20, a maximum intensity of the diamond Raman peak in counts/sec divided by the intensity of photoluminescence at 1270 cm greater than about 3, a Raman sp full width half maximum less than about 6 cm and a diamond-to-graphite Raman ratio greater than about 25. The diamond film has a thermal conductivity of at least 17 Wcm K.

Diamond materials with enhanced heat conductivity

The present invention comprises an article formed for a plurality of diamond-coated fibers preformed into a desired shape. Each of the fibers has first surface regions in contact with immediately adjacent other ones of the fibers, and second surface regions spaced apart from the immediately adjacent other ones of said fibers to define boundaries of inter-fiber voids between the immediately adjacent ones of the fibers. The voids are infiltrated with high thermal conductivity CVD diamond material continuously coating the second surface regions of the fibers and comprising merged growth fronts from the second surface regions of individual immediately adjacent ones of the fibers into the inter-particle voids. The high thermal conductivity CVD diamond material has an average crystallite size greater than about 15 microns, an intensity ratio of diamond-Raman-peak-to-photoluminescence background intensity greater than about 20, a maximum intensity of the diamond Raman peak in counts/sec divided by the intensity of photoluminescence at 1270 cm.sup.-1 greater than about 3, a Raman sp.sup.3 full width half maximum less than about 6 cm.sup.-1 and a diamond-to-graphite Raman ratio greater than about 25. The thermal conductivity of the CVD diamond material is in excess of 17 Wcm.sup.-1 K.sup.-1.

High thermal-conductivity diamond-coated fiber articles

A diamond coated article, wherein the diamond has a thermal conductivity of at least 17 Wcm K.

Article comprising regions of high thermal conductivity diamond on

Method for consolidating diamond material, substantially free of voids, has an average crystallite size greater than about 15 microns, a maximum intensity of the diamond Raman peak in counts/sec divided by the intensity of photoluminescence at 1270 cm.sup.-1 greater than about 3, a Raman sp.sup.3 full width half maximum less than about 6 cm.sup.-1 and a diamond-to-graphite Raman ratio greater than about 25. The diamond material may also comprise carbon atoms with a C.sup.13 content less than 0.05 atomic %.

Method for consolidating diamond particles to form high thermal

A two-stage microwave plasma CVD process is disclosed for making a CVD diamond material, substantially free of voids, which has an average crystallite size greater than about 15 microns, a maximum intensity of the diamond Raman peak in counts/sec divided by the intensity of photoluminescence at 1270 cm.sup.-1 greater than about 3, a Raman sp.sup.3 full width half maximum less than about 6 cm.sup.-1 and a diamond-to-graphite Raman ratio greater than about 25.

Microwave plasma CVD method for coating a substrate with high

The present invention comprises an article formed from a plurality of diamond particles and non-diamond particles compatible with diamond deposition preformed into a desired shape. Each of the particles has first surface regions in contact with immediately adjacent other ones of the particles, and second surface regions spaced apart from the immediately adjacent other ones of said particles to define boundaries of inter-particle voids between the immediately adjacent ones of the particles. The voids are infiltrated with high thermal conductivity CVD diamond material continuously coating the second surface regions of the particles and comprising merged growth fronts from the second surface regions of individual immediately adjacent ones of the particles into the inter-particle voids. The high thermal conductivity CVD diamond material has an average crystallite size greater than about 15 microns, an intensity ratio of diamond- Raman-peak-to-photoluminescence background intensity greater than about 20, a maximum intensity of the diamond Raman peak in counts/sec divided by the intensity of photoluminescence at 1270 cm.sup.-1 greater than about 3, a Raman sp.sup.3 full width half maximum less than about 6 cm.sup.-1 and a diamond-to-graphite Raman ratio greater than about 25. The thermal conductivity of the CVD diamond materials is in excess of 17 Wcm.sup.-1 K.sup.-1.

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Palo Alto, CA, United States of America

John A Herb