Intel Corporation

Johannes Xaver Rauh

Richard Geiger

Georgios Panagopoulos

Harald Gossner

Thomas Wagner

Peter Baumgartner

Uwe Hodel

Walther Lutz

Martin Ostermayr

Richard Hudeczek

Klaus Herold

Carla Moran Guizan

Joachim Singer

Alexander Bechtold

Roshini Sachithanandan

IC devices including transmission lines are disclosed. An example IC device includes two electrically conductive layers (first and second layers) and a support structure between the two electrically conductive layers. The first layer is coupled to transistors over or at least partially in the support structure. A shield of a transmission is placed in the first layer. Conductors of the transmission line are placed in the second layer and are coupled to the first layer by TSVs. Another example IC device includes three electrically conductive layers (first, second, and third layers). The first layer is coupled to transistors over or at least partially in the support structure. A shield of a transmission line is placed in the second layer and conductors of the transmission line are placed in the third layer. The conductors are coupled to the first layer by TSVs and coupled to the second layer by vias.

Integrated circuit device comprising tunable transmission line using buried power rail technology

A semiconductor structure is provided. The semiconductor structure includes a plurality of transistors arranged at a front side of a semiconductor substrate and a test structure located at the front side of the semiconductor substrate. Further, the semiconductor structure comprises a first electrically conductive connection extending from the test structure through the semiconductor substrate to a backside test pad arranged at a backside of the semiconductor substrate.

Semiconductor structure and method for forming a semiconductor structure

Growing community of inventors

Kirchseeon, Germany

Johannes Xaver Rauh