Asml Netherlands B.v.

Carl-zeiss-smt Ag

Johannes Wilhelmus De Klerk

Jozef Maria Finders

Judocus Marie Dominicus Stoeldraijer

Wim Tjibbo Tel

Laurentius Catrinus Jorritsma

Erik Roelof Loopstra

Martinus Hendrikus Antonius Leenders

Joost Jeroen Ottens

Johannes Henricus Wilhelmus Jacobs

Koen Jacobus Johannes Maria Zaal

Frits Van Der Meulen

Bernhard Geuppert

Richard Joseph Bruls

Franz Sorg

Tammo Uitterdijk

Leon Martin Levasier

Johannes Anna Quaedackers

Marinus Aart Van Den Brink

Bernardus Antonius Johannes Luttikhuis

Frederik Eduard De Jong

Wilhelmus Petrus De Boeij

Peter Hanzen Wardenier

Erik Petrus Buurman

Marcel Hendrikus Maria Beems

Edwin Cornelis Kadijk

Jan Cornelis Van Der Hoeven

Adrianus Franciscus Petrus Engelen

Peter Deufel

Peter Franciscus Wanten

Thomas Josephus Maria Castenmiller

Aart Adrianus Van Beuzekom

Ewoud Vreugdenhil

Simon De Groot

Maria Johanna Agnes Rubingh

David Lucien Anstotz

Johannes Martinus Andreas Hazenberg

Peter Schaap

Marteijn De Jong

Freerk Adriaan Stoffels

Richard Bernardus Johannes Droste

Petrus Franciscus Wilhelmus Maria Mandigers

Alexander Serebryakov

Robertus Cornelis Martinus Kruif

An immersion lithographic apparatus is described with a drain configured to remove liquid from a gap between an edge of the substrate and the substrate table on which the substrate is supported. The drain is provided with a means to provide liquid to the drain irrespective of the position of the substrate table and/or a means to saturate gas within the drain. Those measures reduce the variations in heat load due to evaporation of liquid in the drain.

Lithographic apparatus and device manufacturing method

Additional vibrations are added during the exposure of a substrate so that vibrations occurring during exposure of a plurality of areas on the substrate are substantially uniform. This may improve CD uniformity.

Lithographic apparatus, device manufacturing method and computer program product

A multiple-die mask pattern is arranged with dies having the same pattern in mutually opposite orientations. The method for arranging the dies includes analyzing the pattern of a single die to identify a pattern characteristic property which is non uniformly distributed over the area of the die. If the distribution is found to be asymmetric, a line separating the die area into two half-die areas is defined with respect to which the asymmetry is apparent. Half-die areas of different dies with the same pattern characteristic property are grouped together in the mask pattern. The resulting enhanced symmetry of the distribution of the pattern characteristic property over the mask area increases lithographic processability and thereby improves die yield.

Method for patterning a radiation beam, patterning device for patterning a radiation beam

A method for exposing a resist layer on a substrate to an image of a pattern on a mask is disclosed whereby, after starting exposure and before completing exposure, a controlled amount of contrast loss is introduced by a controller in the image at the resist layer by changing during exposure the position of the substrate holder. The contrast loss affects the pitch dependency of the resolution of a lithographic projection apparatus, and its control is used to match pitch dependency of resolution between different lithographic projection apparatus.

Method for exposing a substrate and lithographic projection apparatus

A lithographic apparatus has an assembly to exchange optical elements in a pupil plane of its projection system. The optical elements may be pupil filters and may conform to the physical dimensions specified for a reticle standard, e.g. having sides substantially equal to 5, 6 or 9 inches.

Lithographic apparatus, device manufacturing method and exchangeable optical element

A method for improving the uniformity of a lithographic process. In one aspect, the probability density function of a first and second lithographic apparatus are matched by providing a continuous z-motion to a stage in the first lithographic apparatus during substrate exposure. Preferably, the z-motion is characterized by a normally distributed function, wherein the effective probability density function of the first apparatus is substantially similar to the probability density function of the second apparatus.

A CD-pitch dependency for a lithographic pattern printing process is related to the spectral intensity distribution of radiation used for projecting the pattern. A CD-pitch dependency can vary from one system to another. This can result in an iso-dense bias mismatch between systems. The invention addresses this problem by providing a lithographic apparatus including an illumination system for providing a projection beam of radiation, a projection system for projecting a patterned beam onto a target portion of a substrate, and a substrate table for holding the substrate, with a controller to provide an adjustment of the spectral distribution of radiant intensity of the projection beam. The adjustment of the spectral intensity distribution is based on data relating to an iso dense bias, and includes a broadening of the spectral bandwidth or a change of shape of the spectral intensity distribution.

Lithographic apparatus, excimer laser and device manufacturing method

A method of reducing a wave front aberration is provided for a lithographic process whereby the reducing is based on the selected pattern to be printed and the selected illumination mode used for exposure. Wave front aberrations of a projection system of a lithographic apparatus are measured and reduced by calculating adjustments of optical elements of the projection system and applying the calculated adjustments to the projection system. The calculation of adjustments is based on information on a spatial distribution of radiant intensity in a pupil of the projection system as present during exposing the radiation sensitive layer, and is limited to aberrations in projection lens pupil areas of relative high radiant flux.

Method of reducing a wave front aberration, and computer program product

A lithographic apparatus wherein a dipole illumination mode used for printing a line pattern, is arranged to provide quadrupole illumination. Radiation emanating from the two additional poles and passing the mask pattern without being affected by diffraction is prevented from reaching the wafer by a radiation blocking aperture disposed in the projection system. Astigmatism aberration due to lens heating associated with the dipole illumination mode is reduced by lens heating associated with the additional poles of the quadrupole illumination mode.

Lithographic projection apparatus and a device manufacturing method

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Eindhoven, Netherlands

Johannes Wilhelmus De Klerk