Carl-zeiss-smt Ag

Carl Zeiss Smt Gmbh

Carl-zeiss-stiftung

Carl Zeiss Semiconductor Manufacturing Technologies Ag

Other

Asml Netherlands B.v.

Carl-zeiss-stiftung Trading As Carl Zeiss

Asml Lithography B.v.

Carl Zeiss Semiconductor

Carl-zeiss-stiftung Trading

Johannes Wangler

Wolfgang Singer

Markus Deguenther

Martin Antoni

Manfred Maul

Damian Fiolka

Michael Layh

Karl-Heinz Schuster

Michael Patra

Udo Dinger

Axel Scholz

Jörg Schultz

Joachim Hainz

Wilhelm Ulrich

Markus Weiss

Johannes Eisenmenger

Andras G Major

J&ouml;rg Schultz

Hans-Juergen Mann

Yim-Bun Patrick Kwan

Stefan Xalter

Jan Horn

Frank Melzer

Florian Bach

Wilhelm Egle

Ralf Scharnweber

Joachim Wietzorrek

Joerg Schultz

Heiko Siekmann

Toralf Gruner

Alexander Epple

Stig Bieling

Nils Dieckmann

Markus Brotsack

Gundula Weiss

Vadim Yevgenyevich Banine

Michael Totzeck

Daniel Kraehmer

Aksel Goehnermeier

Markus Schwab

Jess Koehler

Reinhard Voelkel

Alexander Sohmer

Jess K&ouml;hler

Kenneth Weible

Jochen Wietzorrek

Gerhard Ittner

Markus Zenzinger

Uwe Spengler

Bernhard Gellrich

Nils Haverkamp

Bernhard Geuppert

Michael Gerhard

Vladimir Davydenko

Rafael Egger

Erich Schubert

Siegfried Rennon

Stefan Burkart

Andre Bresan

Christa Müller, Legal Representative

Isabel Escudero-Sanz

Eva Kalchbrenner

Erik Roelof Loopstra

Aurelian Dodoc

Martin Endres

Hans-Juergen Rostalski

Ingo Saenger

Thomas Korb

Paul Van Der Veen

Bernd Kleemann

Christoph Menke

Franz-Josef Stickel

Olaf Dittmann

Severin Waldis

Rudolf Von B&uuml;nau

Karl Heinz Schuster

Yim-Bun-Patrick Kwan

Birgit Kuerz

Oliver Wolf

Gerd Furter

Andreas Heisler

Marcel Dierichs

Jan Hoegee

Markus Degünther

Philipp Bosselmann

Martin Vogt

Hans-Joachim Frasch

Karlfried Osterried

Marnix Aldert Tas

Eric Sohmen

Janosch Müller, Legal Representative

Karl-Hein Schuster

Bernd Warm

Roel Moors

Sijbe Abraham Van Der Lei

Christa M&uuml;ller

Dieter Rossman

András G Major

Reinhard Völkel

Illumination optical unit for illuminating an object field in a projection exposure apparatus, comprising a first facet mirror with a structure, which has a spatial frequency of at least 0.2 mmin at least one direction, and a second facet mirror, comprising a multiplicity of facets, wherein the facets are respectively provided with a mechanism for damping spatial frequencies of the structure of the first facet mirror.

Facet mirror

A microlithography projection exposure apparatus includes illumination optics configured to illuminate object field points of an object field in an object plane, and projection optics configured to image the object field onto an image field in an image plane. The illumination optics includes a multi-mirror array which includes a plurality of mirrors configured to adjust an intensity distribution in exit pupils associated with the object field points. The illumination optics also includes an optical system configured to produce, via an incoherent superposition of illumination rays, a temporal modification of a temporal stabilization of an illumination of the multi-mirror array. The optical system includes a mirror which includes a mirror surface. In addition, the optical system includes an actuator configured to produce a tilt of at least a portion of the mirror surface.

Microlithographic projection exposure apparatus having a multi-mirror array with temporal stabilisation

An illumination optical unit for EUV projection lithography illuminates an object field, in which an object to be imaged is arrangeable. A first facet mirror of the illumination optical generates secondary light sources as images of an upstream light source. The first facet mirror includes mirrors which include a mirror surface smaller than 2 mm&#xd7;2 mm. The first facet mirror is a distance |g| from the light source. The illumination optical unit includes a second facet mirror. The two facet mirrors are a distance b' from each other. The individual mirrors of the first facet mirror have a focal length f in a plane of incidence of the illumination light on the individual mirrors such that [0.1 b&#x2032;g/(g&#x2212;b&#x2032;)]&#x3c;f&#x3c;[10 b&#x2032;g/(g&#x2212;b&#x2032;)].

Illumination optical unit for EUV projection lithography

An optical system for a microlithographic projection exposure apparatus and a microlithographic exposure method are disclosed. In an embodiment an optical system for a microlithographic projection exposure apparatus includes at least one mirror arrangement having a plurality of mirror elements which are displaceable independently of each other for altering an angular distribution of the light reflected by the mirror arrangement. The optical system also includes at least one manipulator downstream of the mirror arrangement in the light propagation direction. The manipulator has a raster arrangement of manipulator elements so that light incident on the manipulator during operation of the optical system is influenced differently in its polarization state and/or in its intensity in dependence on the incidence location.

Optical system for a microlithographic projection exposure apparatus and microlithographic exposure method

Microlithographic illumination system includes individually drivable elements to variably illuminate a pupil surface of the system. Each element deviates an incident light beam based on a control signal applied to the element. The system also includes an instrument to provide a measurement signal, and a model-based state estimator configured to compute, for each element, an estimated state vector based on the measurement signal. The estimated state vector represents: a deviation of a light beam caused by the element; and a time derivative of the deviation. The illumination system further includes a regulator configured to receive, for each element: a) the estimated state vector; and b) target values for: i) the deviation of the light beam caused by the deviating element; and ii) the time derivative of the deviation.

Method and device for monitoring multiple mirror arrays in an illumination system of a microlithographic projection exposure apparatus

An assembly for a projection exposure apparatus for EUV projection lithography has an illumination optical unit for guiding illumination light to an illumination field, in which a lithography mask can be arranged. The illumination optical unit comprises a first facet mirror, which comprises a plurality of mirror arrays with respectively a plurality of individual mirrors. The individual mirrors provide individual mirror illumination channels for guiding illumination light partial beams to the illumination field. The mirror arrays of the first facet mirror are arranged in an array superstructure. Gaps extend along at least one main direction (HR&#x3b1;) between neighboring ones of the mirror arrays. Furthermore, the illumination optical unit comprises a second facet mirror, which comprises a plurality of facets, which respectively contribute to imaging a group of the individual mirrors of the field facet mirror into the illumination field via a group mirror illumination channel.

Assembly for a projection exposure apparatus for EUV projection lithography

Illumination systems for microlithographic projection exposure apparatus, as well as related systems, components and methods are disclosed. In some embodiments, an illumination system includes one or more scattering structures and an optical integrator that produces a plurality of secondary light sources.

Illumination system for a microlithographic projection exposure apparatus

An EUV lithography system has an EUV beam path and a monitor beam path. The EUV beam path includes a mirror system having plurality of mirror elements, the orientations of which can be changed. The monitor beam path includes a monitor radiation source, a screen and a spatially resolving detector. The mirror system is arranged in the monitor beam path between the monitor radiation source and the screen.

Monitor system for determining orientations of mirror elements and EUV lithography system

A projection exposure apparatus for microlithography comprises illumination optics for illuminating object field points of an object field in an object plane is disclosed. The illumination optics have, for each object field point of the object field, an exit pupil associated with the object point, where sin(&#x3b3;) is a greatest marginal angle value of the exit pupil. The illumination optics include a multi-mirror array that includes a plurality of mirrors to adjust an intensity distribution in exit pupils associated to the object field points. The illumination optics further contain at least one optical system to temporally stabilize the illumination of the multi-mirror array so that, for each object field point, the intensity distribution in the associated exit pupil deviates from a desired intensity distribution in the associated exit pupil in the case of a centroid angle value sin(&#x3b2;) by less than 2% expressed in terms of the greatest marginal angle value sin(&#x3b3;) of the associated exit pupil and/or, in the case of ellipticity by less than 2%, and/or in the case of a pole balance by less than 2%.

Microlithographic projection exposure apparatus

In an exposure method for exposing a substrate which is arranged in the area of an image plane of a projection objective as well as in a projection exposure system for performing that method, output radiation directed at the substrate and having an output polarization state is produced. Through variable adjustment of the output polarization state with the aid of at least one polarization manipulation device, the output polarization state can be formed to approach a nominal output polarization state. The polarization manipulation can be performed in a control loop on the basis of polarization-optical measuring data.

Microlithographic exposure method as well as a projection exposure system for carrying out the method

Growing community of inventors

Koenigsbronn, Germany

Johannes Wangler