Siemens Aktiengesellschaft

Osram Opto Semiconductors Gmbh

Osram Gmbh

Osram Ag

Johannes Völkl

Berthold Hahn

Volker Härle

Uwe Strauss

Dominik Eisert

Ulrich Zehnder

Johannes Baur

Michael Fehrer

Alfred Lell

Hans-Jürgen Lugauer

Stefan Bader

Ulrich Jacob

Rene Stein

Roland Rupp

Dietrich Stephani

Andreas Weimar

Roland Zeisel

Robert Walter

Wilhelm Stein

Werner Plass

Helmut Bolay

Marianne Ortmann

Andreas Weimer

Raimund Oberschmid

Peter Lanig

Maja Hackenberger

Oliver Kus

Volker HÄRLE

A radiation-emitting semiconductor component has an improved radiation efficiency. The semiconductor component has a multilayer structure with an active layer for generating radiation within the multilayer structure and also a window having a first and a second main surface. The multi-layer structure adjoins the first main surface of the window. At least one recess, such as a trench or a pit, is formed in the window from the second main surface for the purpose of increasing the radiation efficiency. The recess preferably has a trapezoidal cross section tapering toward the first main surface and can be produced for example by sawing into the window.

Radiation-emitting semiconductor component and method for producing the semiconductor component

An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers () of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers () of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (), for which the essentially non-radiating well layers () and the barrier layers () arranged in front form a superlattice.

Optical semiconductor device with multiple quantum well structure

A light-emitting diode () has a lens body () that is fabricated from an inorganic solid. Fastened on the lens body () are semiconductor chips () that emit light beams (). Furthermore, the light-emitting diode () is provided with a housing () that can be screwed into a conventional lamp holder via a thread ().

Light-emitting diode and method for the production thereof

A light-emitting chip () has a lens-type coupling-out window (), whose base area () is provided with a mirror area (). Arranged on a coupling-out area () of the coupling-out window () is a layer sequence (), with a photon-emitting pn junction (). The photons emitted by the pn junction are reflected at the mirror area () and can leave the coupling-out window () through the coupling-out area ().

Radiation-emitting chip

Proposed for high-performance light-emitting diodes are semiconductor chips () whose longitudinal sides are substantially longer than their transverse sides. Light extraction can be substantially improved in this manner.

Radiation-emitting semiconductor chip and light-emitting diode

An optical semiconductor device with a multiple quantum well structure, is set out in which well layers and barrier layers, comprising various types of semiconductor layers, are alternately layered. The device well layers comprise a first composition based on a nitride semiconductor material with a first electron energy. The barrier layers comprise a second composition of a nitride semiconductor material with electron energy which is higher in comparison to the first electron energy. The well and barrier layers are in the direction of growth, by a radiation-active quatum well layer which with the essentially non-radiating well layers () and the barrier layers (), arranged in front, form a supperlattice.

Optical semiconductor device comprising a multiple quantum well structure

Process and device for sublimation growing of silicon carbide

A seed crystal assembly for producing monocrystals and a method for producing SiC monocrystals or monocrystalline SiC layers include a seed crystal with a surface having a first partial region intended as a crystallization surface for a monocrystal grown out of a gas phase and a second partial region with a coating that is chemically resistant to the seed crystal and to the gas phase and does not melt at the growth temperatures. As a result, thermal degradation of the seed crystal is avoided and the quality of the monocrystals which are produced is increased.

Seed crystal for producing monocrystals and method for producing SiC

A method for producing cubic SiC monocrystals includes dissolving SiC powder or other starting material in a solvent at high overpressures and growing the monocrystals on a seed crystal.

Method for producing silicon carbide monocrystals

Device for producing SiC single crystals

Growing community of inventors

Erlangen, Germany

Johannes Völkl