Max-planck-gesellschaft Zur F&#xf6;rderung Der Wissenschaften E. V.

Johannes Treis

Rainer Richter

Florian Schopper

Peter Lechner

Alexander Bähr

Jelena Ninkovic

Alexander Baehr

The invention relates to a DEPFET comprising: a semiconductor substrate () of a first conduction type, which has a first main surface () and a second main surface (), which are opposite one another; a source terminal region () of a second conduction type on the first main surface (); a drain terminal region () of a second conduction type; a channel region (), which is arranged between the source terminal region () and the drain terminal region (); a gate electrode (), which is separated from the channel region () by a gate insulator (); a rear activation region () of a second conduction type, which is formed on the second main surface (); and a substrate doping increase region () of a first conduction type, which is formed at least under the source terminal region () and under the channel region (), the substrate doping increase region () having a signal charge control region () of the first conduction type below the gate electrode (), in which signal charge control region the effective doping dose has a higher value than at other points of the substrate doping increase region () below the gate electrode.

DEPFET transistor

DEPFET transistor and method of manufacturing a DEPFET transistor

The invention concerns a detector arrangement for detection of radiation, in particular particle radiation or electromagnetic radiation, with a semi-conductor detector with several pixels for detection of the radiation. It is proposed that the individual pixels each have a first subpixel () and a second subpixel (). The semi-conductor detector can be switched between a first collection state, in which the first subpixel () is sensitive and the second subpixel () is insensitive so that radiation-generated signal charge carriers are substantially collected only in the first subpixel (), and a second collection state in which the second subpixel () is sensitive and the first subpixel () is insensitive so that the radiation-generated signal charge carriers are collected substantially only in the second subpixel (). The invention furthermore concerns a corresponding operating method and detector arrangements based on the same concept with a higher number of subpixels per pixel.

Detector arrangement and corresponding operating method wherein the detector is a semi-conductor detector which is switchable between collection states with selected subpixel sensitivity

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Munich, Germany

Johannes Treis