Nxp B.v.

Johannes Theodorus Marinus Donkers

Tony Vanhoucke

Hans Mertens

Petrus Hubertus Cornelis Magnee

Evelyne Gridelet

Stephan Heil

Romain Delhougne

Hans Broekman

Disclosed is a semiconductor device comprising a substrate (); at least one semiconducting layer () comprising a nitride of a group 13 element on said substrate; and an ohmic contact () on the at least one semiconducting layer, said ohmic contact comprising a silicon-comprising portion () on the at least one semiconducting layer and a metal portion () adjacent to and extending over said silicon-comprising portion, the metal portion comprising titanium and a further metal. A method of manufacturing such a semiconductor device is also disclosed.

Group 13 nitride semiconductor device and method of its manufacture

A method of manufacturing an integrated circuit comprising bipolar transistors including first and second type bipolar transistors, the method comprising providing a substrate comprising first isolation regions each separated from a second isolation region by an active region comprising a collector impurity of one of the bipolar transistors; forming a base layer stack over the substrate; forming a first emitter cap layer of a first effective thickness over the base layer stack in the areas of the first type bipolar transistor; forming a second emitter cap layer of a second effective thickness different from the first effective thickness over the base layer stack in the areas of the second type bipolar transistor; and forming an emitter over the emitter cap layer of each of the bipolar transistors. An IC in accordance with this method.

Method of manufacturing an IC comprising a plurality of bipolar transistors and IC comprising a plurality of bipolar transistors

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Valkenswaard, Netherlands

Johannes Theodorus Marinus Donkers