Siltronic Ag

Johannes Studener

Wilfried Von Ammon

Reinhold Wahlich

Timo Mueller

Friedrich Passek

Peter Krottenthaler

Erich Daub

Klaus Messmann

Arnold Kuehhorn

A silicon wafer having no epitaxially deposited layer or layer produced by joining to the silicon wafer, with a nitrogen concentration of 1&#xb7;10-8&#xb7;10atoms/cm, an oxygen concentration of 5.2&#xb7;10-7.5&#xb7;10atoms/cm, a central thickness BMD density of 3&#xb7;10-2&#xb7;10cm, a cumulative length of linear slippages &#x2266;3 cm and a cumulative area of areal slippage regions &#x2266;7 cm, the front surface having &#x3c;45 nitrogen-induced defects of &#x3e;0.13 &#x3bc;m LSE in the DNN channel, a layer at least 5 &#x3bc;m thick, in which &#x2266;1&#xb7;10COPs/cmwith a size of &#x2267;0.09 &#x3bc;m occur, and a BMD-free layer &#x2267;5 &#x3bc;m thick. Such wafers may be produced by heat treating the silicon wafer, resting on a substrate holder, a specific substrate holder used depending on the wafer doping. For each holder, maximum heating rates are selected to avoid formation of slippages.

Silicon wafer and process for the heat treatment of a silicon wafer

Growing community of inventors

Cottbus, Germany

Johannes Studener