Balzers Hochvakuum Ag

Unaxis Trading Ag

Unaxis Deutschland Gmbh

Cobes Gmbh Nachrichten- Und Datentechnik

Johannes Stollenwerk

Christoph Daube

Achim G&uuml;rke

Andreas Kloeppel

Achim Gurke

Thomas Linz

In an ion etching method for reducing a substrate thickness, an electric arc is generated in a vacuum chamber such that the electric arc is locally separated from the substrate and circulates about the substrate. A plasma of a supplied etching gas is produced by the electric arc, and the ions of the etching gas are accelerated onto the substrate by an electric potential. The employed device has a vacuum chamber, an etching gas supply, and first and second electrodes supplied with direct or alternating voltage for generating the electric arc that produces the plasma of the etching gas. The first electrode is ring-shaped and the second electrode is arranged centrally to the ring of the first electrode. A magnetic coil creates a migrating magnetic field such that the electric arc is locally separated from the substrate and circulates about the substrate in a carousel fashion.

Method and device for plasma-treating the surface of substrates by ion bombardment

Sparking is suppressed during high-frequency sputtering by a high-frequency generator ( ) which has a controlled switching unit ( ) that is connected upstream in relation to the output of the generator. A high-frequency supply signal that is generated at the output of the high-frequency generator is stopped for plasma discharge (PL) for a short time, by the switching unit.

Electric supply unit and method for reducing arcing during sputtering

A method for manufacturing a display panel substrate has the steps of flowing a working gas along and out of a slit defined between two sputtering targets of Mg and toward the substrate thereby selecting the purity of the Mg material of the targets to be at least 99% and thereby blowing sputtered-off material out of the slit and toward the substrate. Introduction, in an area between the slit and the substrate, of a reactive gas containing oxygen, follows, and reacting the sputtered-off material with the reactive gas results in depositing on the substrate, an MgO layer. The method also includes setting the temperature of the substrate during the coating process.

Substrate coated with an MgO layer

A method and apparatus for producing a substrate which is coated with a Mgo-layer, includes a pair of Mg targets which define a slit and which have a target purity of at least 99 percent. A working gas flows along the slit. Oxygen is provided in an area between the slit and the substrate to be coated. The temperature of the substrate is set by heating or cooling the substrate during the coating process.

Substrate coated with an MGO-layer

A substrate coated has at least one MgO-layer and an extent of at least 100 mm.times.100 mm. The layer has a predominant peak in the measuring diagram of the .THETA.-2.THETA.-method and the density of the material of the layer is at least 80% of the density of stoichiometric MgO-bulk material, which is .rho.=3.58 g/cm.sup.3.

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Rösrath, Germany

Johannes Stollenwerk