Osram Oled Gmbh

Johannes Saric

Anna Strozecka-Assig

Wolfgang Schmid

Johannes Baur

Sebastian Pickel

Jens Müller

Benjamin Reuters

In one embodiment, the optoelectronic semiconductor chip includes a semiconductor layer sequence with an active zone for generating a radiation. The semiconductor layer sequence is based on AlInGaP and/or on AlInGaAs. A metal mirror for the radiation is located on a rear side of the semiconductor layer sequence opposite a light extraction side. A protective metallization is applied directly to a side of the metal mirror facing away from the semiconductor layer sequence. An adhesion promoting layer is located directly on a side of the metal mirror facing the semiconductor layer sequence. The adhesion promoting layer is an encapsulation layer for the metal mirror, so that the metal mirror is encapsulated at least at one outer edge by the adhesion promoting layer together with the protective metallization.

Optoelectronic semiconductor chip and method for producting an optoelectronic semiconductor chip

In one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence with an active zone for generating a radiation. The semiconductor layer sequence is based on AlInGaP and/or on AlInGaAs. A metal mirror for the radiation is located on a rear side of the semiconductor layer sequence opposite a light extraction side. A protective metallization is applied directly to a side of the metal mirror facing away from the semiconductor layer sequence. An adhesion promoting layer is located directly on a side of the metal mirror facing the semiconductor layer sequence. The adhesion promoting layer is an encapsulation layer for the metal mirror, so that the metal mirror is encapsulated at least at one outer edge by the adhesion promoting layer together with the protective metallization.

Optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip

In an embodiment, the optoelectronic semiconductor component () comprises a semiconductor layer sequence () with an active zone () for generating a radiation. On an bottom side () of the semiconductor layer sequence () there is an electrically insulating separation layer () with several openings (). An adhesion-promoting layer () is located next to the openings () on a side of the separation layer () facing away from the semiconductor layer sequence (). A continuous metallization layer () is located on a side of the adhesion-promoting layer () facing away from the semiconductor layer sequence (). The semiconductor layer sequence () is electrically contacted in the openings () directly by the metallization layer (). The metallization layer () and the openings () are spaced from the active zone () in the direction perpendicular to the separation layer ().

Optoelectronic semiconductor component and method of producing an optoelectronic semiconductor component

In one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence with an active zone for generating radiation with a wavelength of maximum intensity L. A mirror comprises a cover layer. The cover layer is made of a material transparent to the radiation and has an optical thickness between 0.5 L and 3 L inclusive. The cover layer is followed in a direction away from the semiconductor layer sequence by between inclusive two and inclusive ten intermediate layers of the mirror. The intermediate layers alternately have high and low refractive indices. An optical thickness of at least one of the intermediate layers is not equal to L/4. The intermediate layers are followed in the direction away from the semiconductor layer sequence by at least one metal layer of the mirror as a reflection layer.

Optoelectronic semiconductor chip

Optoelectronic semiconductor chip with high reflectivity and method for producing an optoelectronic semiconductor chip with high reflectivity

In one embodiment, the optoelectronic semiconductor chip () comprises a semiconductor layer sequence () with an active zone () for generating radiation with a wavelength of maximum intensity L. A mirror () comprises a cover layer (). The cover layer () is made of a material transparent to the radiation and has an optical thickness between 0.5 L and 3 L inclusive. The cover layer () is followed in a direction away from the semiconductor layer sequence () by between inclusive two and inclusive ten intermediate layers () of the mirror (). The intermediate layers () alternately have high and low refractive indices. An optical thickness of at least one of the intermediate layers () is not equal to L/4. The intermediate layers () are followed in the direction away from the semiconductor layer sequence () by at least one metal layer () of the mirror () as a reflection layer.

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Wuppertal, Germany

Johannes Saric