Carl Zeiss Smt Gmbh

Carl Zeiss Ag

Carl Zeiss Sms Ltd.

Carl Zeiss X-Ray Microscopy, Inc.

Carl Zeiss Microscopy Gmbh

Carl-Zeiss-Smt Ag

Johannes Ruoff

Heiko Feldmann

Ingo Saenger

Daniel Kraehmer

Frank Schlesener

Joerg Zimmermann

Christoph Hennerkes

Toralf Gruner

Ulrich Matejka

Hans-Jürgen Mann

Jens Timo Neumann

Sascha Perlitz

Daniel Golde

Martin Meier

Stephan Andre

Josef Rapp

Wolfgang Singer

Norbert Wabra

Aksel Goehnermeier

Susanne Beder

Thomas Schicketanz

Christoph Husemann

Sonja Schneider

Ricarda Schoemer

Alexander Wolf

Christoph Hilmar Graf Vom Hagen

Thomas Matthew Gregorich

Markus Deguenther

Michael Patra

Manfred Maul

Hubert Holderer

Michael Totzeck

Martin Endres

Hans-Juergen Rostalski

Michael Layh

Markus Seesselberg

Klaus Edinger

Guenter Rudolph

Michael Budach

Vladimir Dmitriev

Ralf Mueller

Thomas Anthony Case

Bernd Kleemann

Thorsten Hofmann

Dirk Hellweg

Markus Mengel

Oliver Natt

Christian Dietrich

Vladan Blahnik

Dirk Juergens

Thomas Thaler

Tristan Bret

Ramani Pichumani

Steffen Siegler

Joerg Frederik Blumrich

Michael Carl

Jörg Frederik Blumrich

Shao-Chi Wei

Ralf Müller

Gerhard Krampert

Rong Dong

Stephan André

Thomas Eisenmann

Marc Bienert

Juan Atkinson Mora

Jörg Zimmermann

Ingo SÄNGER

Ricarda SCHÖMER

Daniel KRÄHMER

Dirk JÜRGENS

An imaging optical arrangement serves to image an object illuminated by X-rays. An imaging optics serves to image a transfer field in a field plane into a detection field in a detection plane. A layer of scintillator material is arranged at the transfer field. A stop is arranged in a pupil plane of the imaging optics. The imaging optics has an optical axis. A center of a stop opening of the stop is arranged at a decentering distance with respect to the optical axis. Such imaging optical arrangement ensures a high quality imaging of the object irrespective of a tilt of X-rays entering the transfer field. The imaging optical arrangement is part of a detection assembly further comprising a detection array and an object mount. Such detection assembly is part of a detection system further comprising a X-ray source.

Imaging optical arrangement to image an object illuminated by X-rays

A method for acquiring a 3D image of a sample structure includes acquiring a first raw 2D set of 2D images of a sample structure at a limited number of raw sample planes; calculating a 3D image of the sample structure represented by a 3D volumetric image data set; and extracting a measurement parameter from the 3D volumetric image data set. A further number of interleaving 2D image acquisitions are recorded at a further number of interleaved sample planes which do not coincide with previous acquisition sample planes. The steps 'calculating,' “extracting” and “assigning” are repeated for the further interleaving 2D set until convergence or a maximum number of 2D image acquisitions is recorded. A projection system used for such method comprises a projection light source, a rotatable sample structure holder and a spatially resolving detector. Such method can also be used to acquire virtual tomographic images of a sample.

Method to acquire a 3D image of a sample structure

Methods for characterizing the surface shapes of optical elements include the following steps: carrying out, in an interferometric test arrangement, at least a first interferogram measurement on the optical element by superimposing a test wave, which has been generated by diffraction of electromagnetic radiation on a diffractive element and has been reflected at the optical element, carrying out at least one additional interferogram measurement on in each case one calibrating mirror for determining calibration corrections, and determining the deviation from the target shape of the optical element based on the first interferogram measurement carried out on the optical element and the determined calibration corrections. At least two interferogram measurements are carried out for the at least one calibrating mirror, which differ from one another with regard to the polarization state of the electromagnetic radiation.

Method and device for characterizing the surface shape of an optical element

The invention relates to an apparatus and a method for characterizing a microlithographic mask. According to one aspect, an apparatus according to the invention comprises at least one light source which emits coherent light, an illumination optical unit which produces a diffraction-limited light spot on the mask from the coherent light of the at least one light source, a scanning device, by use of which it is possible to implement a scanning movement of the diffraction-limited light spot relative to the mask, a sensor unit, and an evaluation unit for evaluating the light that is incident on the sensor unit and has come from the mask, an output coupling element for coupling out a portion of the coherent light emitted by the at least one light source, and an intensity sensor for capturing the intensity of this output coupled portion.

Apparatus and method for characterizing a microlithographic mask

A detection system serves for X-ray inspection of an object. An imaging optical arrangement serves to image the object in an object plane illuminated by X-rays generated by an X-ray source. The imaging optical arrangement comprises an imaging optics to image a transfer field in a field plane into a detection field in a detection plane. A detection array is arranged at the detection field. An object mount holds the object to be imaged and is movable relative to the X-ray source via an object displacement drive along at least one lateral object displacement direction in the object plane. A shield stop with a transmissive shield stop aperture is arranged in an arrangement plane in a light path and is movable via a shield stop displacement drive in the arrangement plane. A control device has a drive control unit, which is in signal connection with the shield stop displacement drive and with the object displacement drive for synchronizing a movement of the shield stop displacement drive and the object displacement drive. The result is an optimization of an X-ray illumination of the object to achieve a high-resolution object imaging.

Detection system for X-ray inspection of an object

An imaging optical unit for EUV microlithography is configured so that, when used in an optical system for EUV microlithography, relatively high EUV throughput and high imaging quality can achieved.

Imaging optical unit for EUV microlithography

An optical system transfers original structure portions () of a lithography mask (), which have an x/y-aspect ratio of greater than 4:1, and are aligned on the lithography mask, separated respectively by separating portions () that carry no structures to be imaged. The optical system transfers the original structure portions onto image portions () of a substrate (). Each of the original structure portions is transferred to a separate image portion. The image portions onto which the original structure portions are transferred are arranged in a line next to one another. An associated projection optical unit may have an anamorphic embodiment with different imaging scales for two mutually perpendicular field coordinates specifically, one that is reducing for one of the field coordinates and the other is magnifying for the other field coordinates.

Optical system for transferring original structure portions of a lithography mask, projection optical unit for imaging an object field in which at least one original structure portion of the lithography mask is arrangeable, and lithography mask

An imaging optical unit includes a plurality of mirrors to guide imaging light along an imaging beam path. The plurality of mirrors includes a number of mirrors for grazing incidence (GI mirrors), which deflect a chief ray of a central object field point with an angle of incidence of more than 45&#xb0;. At least two of the GI mirrors are in the imaging beam path as basic GI mirrors so that the deflection effect thereof adds up for the chief ray. At least one further GI mirror is arranged in the imaging beam path as a counter GI mirror so that the deflection effect thereof acts in subtractive fashion for the chief ray in relation to the deflection effect of the basic GI mirrors. This can yield an imaging optical unit having enhanced flexibility in relation to an installation space used for mirror bodies of the mirrors of the imaging optical unit.

Imaging optical unit for imaging an object field into an image field

In a method for three-dimensionally measuring a 3D aerial image in the region around an image plane during the imaging of a lithography mask, which is arranged in an object plane, a selectable imaging scale ratio in mutually perpendicular directions (x, y) is taken into account. For this purpose, an electromagnetic wavefront of imaging light is reconstructed after interaction thereof with the lithography mask. An influencing variable that corresponds to the imaging scale ratio is included. Finally, the 3D aerial image measured with the inclusion of the influencing variable is output. This results in a measuring method with which lithography masks that are optimized for being used with an anamorphic projection optical unit during projection exposure can also be measured.

Method for three-dimensionally measuring a 3D aerial image of a lithography mask

An imaging optical unit serves within a metrology system for examining a lithography mask. The lithography mask can be arranged in an object field of the imaging optical unit. The object field is defined by two mutually perpendicular object field coordinates. The imaging optical unit has an aperture stop of which the aspect ratio in the direction of the two object field coordinates differs from 1. This results in an imaging optical unit which can be used for the examination of lithography masks that are designed for projection exposure with an anamorphic projection optical unit.

Imaging optical unit for a metrology system for examining a lithography mask

A projection lens is disclosed for imaging a pattern arranged in an object plane of the projection lens into an image plane of the projection lens via electromagnetic radiation having an operating wavelength &#x3bb; from the extreme ultraviolet range. The projection lens includes a multiplicity of mirrors having mirror surfaces arranged in a projection beam path between the object plane and the image plane so that a pattern of a mask in the object plane is imagable into the image plane via the mirrors. A first imaging scale in a first direction running parallel to a scan direction is smaller in terms of absolute value than a second imaging scale in a second direction perpendicular to the first direction. The projection lens also includes a dynamic wavefront manipulation system for correcting astigmatic wavefront aberration portions caused by reticle displacement.

Projection lens, projection exposure apparatus and projection exposure method for EUV microlithography

The present application relates to a method for examining at least one element of a photolithographic mask for an extreme ultraviolet (EUV) wavelength range, wherein the method includes the steps of: (a) examining the at least one element with light in the EUV wavelength range; and (b) determining the behavior of the at least one element in the EUV wavelength range.

Method and apparatus for examining an element of a photolithographic mask for the EUV range

The invention relates to a device for optical examination of a specimen with a cryo-immersion objective, having a stative, to which the cryo-immersion objective is fixed, wherein the cryo-immersion objective has a plurality of optical components, in particular lenses, and wherein the cryo-immersion objective has an optical front component which is in contact during operation with a coolable immersion liquid, having a specimen carrier for a specimen to be examined, having means for providing a cooled immersion liquid between the optical front component and the specimen to be examined on or against the specimen carrier. The device is characterized in that insulating means are present for interrupting a heat transition between the stative and the optical front component. The invention also relates to a method for examining a specimen, wherein with a device according to the invention a plurality of microscopic images are recorded, wherein for each of the individual images a different offset between a main housing and a separate housing is set. Finally the invention relates to a method for transferring a device according to the invention into an operation-ready state, wherein the components, cooled in operation, of the cryo-immersion objective, in particular the optical front component, are cooled with a coolant, in particular with liquid nitrogen, wherein the immersion liquid is cooled with a coolant, in particular with liquid nitrogen, and wherein thereafter the cooled components of the cryo-immersion objective are brought into contact with the immersion liquid.

Device for optical examination of a specimen, method for examining a specimen and method for transferring a device into an operation-ready state

A mirror for EUV radiation includes a mirror body, which has at least one EUV radiation-reflecting region and at least two EUV radiation-permeable regions. A spatial separation of the illumination and imaging beam paths is possible with small angles of incidence and a large object-side numerical aperture.

Mirror and related EUV systems and methods

An imaging optical unit for EUV projection lithography serves to image an object field into an image field. Mirrors guide imaging light from the object field to the image field. An aperture stop is tilted by at least 1&#xb0; in relation to a normal plane which is perpendicular to an optical axis. The aperture stop has a circular stop contour. In mutually perpendicular planes, a deviation of a numerical aperture NAmeasured in one plane from a numerical aperture NAmeasured in the other plane is less than 0.003, averaged over the field points of the image field. What emerges is an imaging optical unit, in which homogenization of an image-side numerical aperture is ensured so that an unchanging high structure resolution in the image plane is made possible, independently of an orientation of a plane of incidence of the imaging light in the image field.

Imaging optical unit for EUV projection lithography

Growing community of inventors

Aalen, Germany

Johannes Ruoff