Osram Oled Gmbh

Hella Gmbh & Co Kgaa

Pictiva Displays International Limited

Oram Oled Gmbh

Johannes Rosenberger

Thomas Wehlus

Daniel Riedel

Nina Riegel

Arne Fleissner

Silke Scharner

Andreas Rausch

Andrew Ingle

Michael Popp

Richard Baisl

Carola Diez

Philipp Schwamb

Karsten Diekmann

Simon Schicktanz

Benjamin Krummacher

Dominik Pentlehner

Arndt Jaeger

Ulrich Niedermeier

Arne Fleißner

Thorsten Vehoff

Christoph Kefes

Egbert Hoefling

Jürgen Heinrich

Stefan Dechand

Arne Fleiβner

The invention relates to an organic optoelectronic component () comprising a first electrode layer (), having a doped matrix material and metal nanowires, an organic active layer (), which is suitable for emitting or detecting electromagnetic radiation, and a second electrode layer (). The organic active layer () is directly adjacent to the first electrode layer (). The invention further relates to a method for producing the organic optoelectronic component ().

Organic optoelectronic component and method for producing the same

A method is specified for production of an insulator layer. This method comprises the following process steps: A) providing a precursor comprising a mixture of a first, a second and a third component where&#x2014;the first component comprises a compound of the general  

Process for producing an insulator layer, process for producing an organic optoelectronic component comprising an insulator layer and organic optoelectronic component comprising an insulator layer

A method for producing an organic electronic device is disclosed. In an embodiment the method includes applying an organic material to a substrate to form at least one organic functional layer, applying a patterned electrode material to the at least one organic functional layer by a first mask, and removing the organic material from regions which are free of the electrode material.

Method for producing an organic electronic device

The invention relates to an optoelectronic component, the optoelectronic component comprises a light-emitting layer stack, and an electrothermal protection element, which is connected to the layer stack in the component and has a temperature-dependent resistor.

Optoelectronic component and method for operating an optoelectronic component

An optoelectronic component is provided with a carrier; a zinc oxide layer arranged on the carrier and having the first and second regions, wherein the first region is a first electrode structure which is doped with aluminum so that the first region is transparent and electrically conductive; an organic optically functional layer structure arranged at least partially over the first electrode structure; and a second electrode structure arranged at least partially over the organic optically functional layer structure. The first and second electrode structures electrically contact the organic optically functional layer structure. The zinc oxide layer has a lower doping in the second region than the first electrode structure. The zinc oxide layer is configured in the second region as a varistor layer structure, which is arranged between the first and second electrode structures and contacts the two electrode structures. The varistor layer structure adjoins the optically transparent first region.

Optoelectronic component and method for producing an optoelectronic component

Disclosed is an organic light-emitting, component which comprises a substrate, a first electrode on the substrate, a first organic functional layer stack on the first electrode, a charge carrier-generating layer stack on the first organic functional layer stack, a second organic functional layer stack on the charge carrier-generating layer stack, and a second electrode on the second organic functional layer stack. The charge carrier-generating layer stack comprises at least one hole-transporting layer, one electron-transporting layer and one intermediate layer, wherein the at least one intermediate layer comprises a naphthalocyanine derivative.

Organic light-emitting device and method for producing an organic light-emitting device

A method for producing an organic light-emitting diode and an organic light-emitting diode are disclosed. In an embodiment, the method includes providing a substrate with a continuous application surface, generating multiple adhesion regions on the application surface, the adhesion regions being completely surrounded by the application surface, applying metal nanowires over the entire surface of the application surface, removing the metal nanowires outside of the adhesion regions by a washing process using a solvent such that the remaining metal nanowires completely or partly form a light-permeable electrode of the organic light-emitting diode, and applying an organic layer sequence onto the light-permeable electrode.

Method for producing an organic light-emitting diode and organic light-emitting diode

An optoelectronic device is disclosed. In an embodiment the optoelectronic device includes a light-transmissive first electrode, an electrically conductive track including a metal, and a functional organic region having at least one active region, wherein the electrically conductive track is arranged between the first electrode and the functional organic region and wherein the electrically conductive track is in direct contact with the first electrode and the functional organic region.

Optoelectronic device

The invention relates to a lighting device comprising an illuminant embodied as an OLED, and comprising a capacitive switching means, which are arranged on a substrate, wherein the illuminant has a first electrically conductive electrode and a second electrically conductive electrode, wherein a layer comprising organic, electroluminescent material is arranged between the first electrode and the second electrode, wherein the switching means has an electrode, wherein one electrode from the first electrode or the second electrode of the illuminant together with the electrode of the switching means is arranged in one plane, wherein a nonconductive spacing amounting to between 100 &#x3bc;m and 700 &#x3bc;m, more particularly between 400 &#x3bc;m and 600 &#x3bc;m, is present between said one electrode of the illuminant and the electrode of the switching means in the plane.

OLED lighting device with capacitive switch

An optoelectronic component may include a first electrode having one outer electrode segment formed at a lateral edge of the first electrode, and one inner electrode segment formed apart from the lateral edge of the first electrode, an electrically conductive current distribution structure formed above the first electrode and having one outer substructure extending over the outer electrode segment, and one inner substructure extending over the inner electrode segment and electrically insulated from the outer substructure, one current lead extending from the lateral edge of the first electrode toward the inner substructure, electrically coupled to the inner substructure, electrically insulated from the outer substructure and which structure corresponds to the current distribution structure, an insulation structure, which covers the current distribution structure and the current lead, an organic functional layer structure, and a second electrode above the organic functional layer structure.

Optoelectronic component and a method for producing an optoelectronic component

A light-emitting module including a light-emitting component and a resilient body is provided. The light-emitting component includes a light-emitting layer structure for generating light and includes a light-emitting main face through which the generated light leaves the light-emitting component. The resilient body, which is arranged over the light-emitting main face, is connected firmly to the light-emitting component, includes at least one light-deviating region, and includes a free-lying surface which includes at least one surface element, which lies at a distance greater than or equal to 4 mm from the light-emitting layer structure.

Optoelectronic module and method for producing an optoelectronic module

A lighting device may include a substrate having a carrier, a first electrical busbar, a second electrical busbar, and an optically functional structure on or above the carrier, wherein the optically functional structure is formed laterally between the first and the second electrical busbar, and a first electrode electrically coupled to the first electrical busbar and/or the second electrical busbar, on or above the carrier, and an organic functional layer structure on or above the first electrode, wherein the organic functional layer structure is formed for converting an electric current into an electromagnetic radiation, and a second electrode on or above the organic functional layer structure. The optically functional structure is formed in such a way that the beam path of the electromagnetic radiation which passes through the substrate and/or the spectrum of the electromagnetic radiation passing through the substrate are/is variable by means of the optically functional structure.

Lighting device, method for producing a lighting device

Various embodiments may relate to a component. The component includes an optically active region designed for electrically controllably transmitting, reflecting, absorbing, emitting and/or converting an electromagnetic radiation, and an optically inactive region formed alongside the optically active region, wherein the optically inactive region and/or the optically active region have/has an adaptation structure designed to adapt the value of an optical variable in the optically inactive region to a value of the optical variable in the optically active region.

Component and method for producing a component

In various embodiments, an optoelectronic assembly may include at least one organic light emitting diode including a first light emitting diode element and a second light emitting diode element, and an electronic circuit. The first light emitting diode element and the second light emitting diode element are electrically connected in parallel and are deposited monolithically on a common substrate, and the electronic circuit is designed to compare an electric current through the first light emitting diode element that flows during operation with an electric current through the second light emitting diode element that flows during operation and, depending on the comparison, to detect a short circuit of the first light emitting diode element or of the second light emitting diode element and to initiate an electrical switching off of one of the light emitting diode elements and/or of the assembly.

Optoelectronic assembly and method for detecting an electrical short circuit

An optoelectronic assembly includes an optoelectronic component having a surface light source for emitting a light on a substrate which is at least partly transmissive for the light emitted by the surface light source, wherein the optoelectronic component includes at least one first main emission surface and a second main emission surface wherein the second main emission surface is situated opposite the first main emission surface, and a reflective structure which is arranged at least partly in the beam path of the light emitted by the surface light source and is designed to reflect at least part of the light impinging on the reflective structure in the direction of the substrate, such that a laterally offset image of the surface light source is generatable. The reflective structure and the optoelectronic component are arranged at a distance from one another in a range of approximately 1 mm to approximately 1000 mm.

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Wuppertal, Germany

Johannes Rosenberger