Corning Incorporated

Johannes Moll

Charlene Marie Smith

Nicholas Francis Borrelli

James Joseph Price

Sergio Tsuda

Robert Stephen Wagner

Alranzo Boh Ruffin

James Joseph Watkins

Stephan Lvovich Logunov

Paul Stephen Danielson

Heather Debra Boek

Philip Robert LeBlanc

Rajeshkannan Palanisamy

Paul Maynard Schermerhorn

Michal Mlejnek

Chong Pyung An

Correy Robert Ustanik

Uta-Barbara Goers

Michael S Pambianchi

En Hong

Daniel Wayne Levesque, Jr

Prashanth Abraham Vanniamparambil

Christine E Heckle

Sung-chan Hwang

Tae-ho Keem

Michael R Heslin

Ji Hwa Jung

Sung-jong Pyo

Andres Covarrubias Jaramillo

Hyeong-cheol Lee

Amanda Kathryn Thomas

The described embodiments relate generally to a micro-perforated panel systems and methods for noise abatement and method of making a micro-perforated panel system. In particular, embodiments relate to glass micro-perforated panel systems and methods for their construction.

Micro-perforated panel systems, applications, and methods of making micro-perforated panel systems

Strengthened glass articles having laser etched features, electronic devices, and methods of fabricating etched features in strengthened glass articles are disclosed. In one embodiment, a strengthened glass article includes a first strengthened surface layer and a second strengthened surface layer under a compressive stress and extending from a first surface and a second surface, respectively, of the strengthened glass article to a depth of layer, and a central region between the first strengthened surface layer and the second strengthened surface layer that is under tensile stress. The strengthened glass article further includes at least one etched feature formed by laser ablation within the first surface or the second surface having a depth that is less than the depth of layer and a surface roughness that is greater than a surface roughness of the first surface or second surface outside of the at least one etched feature.

Strengthened glass articles having etched features and methods of forming the same

A method of inspecting defects on a transparent substrate may include: selecting a gradient of an illumination optical system so that light incident on the transparent substrate has a first angle; selecting a gradient of a detection optical system so that an optical axis of the detection optical system located over the transparent substrate has a second angle, which is equal to or less than the first angle; adjusting a position of at least one of the illumination optical system, the transparent substrate, and the detection optical system so that a field-of-view of the detection optical system covers a first region where the light meets a first surface of the transparent substrate and does not cover a second region where light meets a second surface of the transparent substrate, the second surface being opposite to the first surface; illuminating the transparent substrate; and detecting light scattered from the transparent substrate.

Method and apparatus for inspecting defects on transparent substrate and method emitting incident light

Methods and apparatus for measuring thickness of a thin film include: obtaining a high-speed thickness measurement of a thin film using a laser projection system and detector array, obtaining thickness measurements of the thin film at one or more locations using a single-point measurement apparatus and determining the accuracy of the high-speed measurement values by comparing them to one or more of the absolute thickness values of the film as measured by the single-point measurement apparatus.

Methods and apparatus for the measurement of film thickness

Methods and apparatus for measuring ion implant dose in a material provide for: measuring a reflection spectrum through an implantation surface of the material, the implantation surface having been subjected to an ion implantation process to create a material layer from the implantation surface to a depth within the material and a layer of weakness below the material layer; storing magnitudes of the reflection spectrum as a function of respective wavelengths of incident light on the implantation surface; and computing an ion implant dose used during the ion implantation process based on comparisons of at least two magnitudes of the reflection spectrum at least two corresponding wavelengths of the incident light.

Methods and apparatus for measuring ion implant dose

Disclosed is a synthetic silica glass optical material having high resistance to optical damage by ultraviolet radiation in the ultraviolet wavelength range, particularly in the wavelength region of less than about 250 nm and particularly, exhibiting a low laser induced density change. The synthetic silica glass optical material of the present invention contains at least about 0.1 ppm of aluminum and Hconcentration levels greater than about 0.5&#xd7;10molecules/cm. Additionally, the synthetic silica optical material of the present invention exhibits an Hto Al ratio of greater than about 1.2, as measured in &#xd7;10/cmmolecules Hper ppm Al.

Synthetic silica glass optical material having high resistance to optically induced index change

Lithographic methods are disclosed. In one such method, a pulsed ultraviolet radiation source for producing ultraviolet lithography radiation having a wavelength shorter than about 300 nm at a fluence of less than 10 mJ/cm/pulse and a high purity fused silica lithography glass having a concentration of molecular hydrogen of between about 0.02&#xd7;10molecules/cmand about 0.18&#xd7;10molecules/cmare provided. A lithography pattern is formed with the ultraviolet lithography radiation; the lithography pattern is reduced to produce a reduced lithography pattern; and the reduced lithography pattern is projected onto a ultraviolet radiation sensitive lithography medium to form a printed lithography pattern. At least one of the forming, reducing, and projecting steps includes transmitting the ultraviolet lithography radiation through the high purity fused silica lithography glass. Lithography systems and high purity fused silica lithography glass are also described.

Photolithography methods and systems

The invention provides an ultraviolet lithography method/system. The lithography method and system include providing a below 200 nm radiation source, providing a photolytically improved transmitting fused silica glass lithography optical element, transmitting below 200 nm photons through said photolytically improved transmitting fused silica glass lithography optical element to form a lithography pattern which is reduced and projected onto a radiation sensitive lithography printing medium to form a printed lithography pattern. Providing the photolytically improved transmitting fused silica glass lithography optical element includes providing a photolytically improved transmitting fused silica glass lithography optical element preform body and forming the photolytically improved transmitting fused silica glass lithography optical element preform into said lithography optical element.

Method of inducing transmission in optical lithography preforms

Lithographic methods are disclosed. In one such method, a pulsed ultraviolet radiation source for producing ultraviolet lithography radiation having a wavelength shorter than about 300 nm at a fluence of less than 10 mJ/cm /pulse and a high purity fused silica lithography glass having a concentration of molecular hydrogen of between about 0.02&times;10 molecules/cm and about 0.18&times;10 molecules/cm are provided. A lithography pattern is formed with the ultraviolet lithography radiation; the lithography pattern is reduced to produce a reduced lithography pattern; and the reduced lithography pattern is projected onto a ultraviolet radiation sensitive lithography medium to form a printed lithography pattern. At least one of the forming, reducing, and projecting steps includes transmitting the ultraviolet lithography radiation through the high purity fused silica lithography glass. Lithography systems and high purity fused silica lithography glass are also described.

Growing community of inventors

Corning, NY, United States of America

Johannes Moll