Tel Solar Ag

Universite De Neuchatel, Institut De Microtechnique

Fyzikalni Ustave Av Cr, V.v.i.

Oerlikon Solar IP Ag, Trubbach

Johannes Meier

Ulrich Kroll

Daniel Borrello

Evelyne Vallat-Sauvain

Stefano Benagli

Arthur Büchel

Tobias Roschek

Markus Kupich

Yassine Djeridane

Oleg Babchenko

Adam Purkrt

Jakub Holovsky

Zdenek Remes

Ales Poruba

Karel Hruska

Neda Neykova

Milan Vanecek

Castens Lucie

Richard Grundmüller

Hanno Goldbach

Giovanni Monteduro

Miguel Marmelo

Markus Bronner

Jean-Baptiste Orhan

Jerome Steinhauser

Jochen Hoetzel

The present invention provides an improved thin film solar cell, wherein at least one additional resistive transparent conductive oxide (TCO) layer is incorporated into the solar cell. The additional resistive TCO electrically separates the conductive TCO layers acting as electrodes of such a cell and thus decreases or prevents performance losses. Furthermore, methods for the production of such solar cells are disclosed.

Method for obtaining high performance thin film devices deposited on highly textured substrates

There is provided a method of coating a substrate with a zinc oxide film. The method includes (a) providing a substrate with at least one substantially flat surface, (b) subjecting the surface at least partially to a plasma-etching process, and (c) depositing on the etched surface, a layer that includes zinc oxide. The method is particularly suitable for manufacturing solar cells.

Method of coating a substrate

A method for manufacturing a micromorph tandem cell is disclosed. The micromorph tandem cell comprises a &#x3bc;c-Si:H bottom cell and an a-Si:H top cell, an LPCVD ZnO front contact layer and a ZnO back contact in combination with a white reflector. The method comprises the steps of The micromorph tandem cell can achieve a stabilized efficiency of 10.6%.

High efficiency micromorph tandem cells

In the frame of manufacturing a photovoltaic cell a layer () of silicon compound is deposited on a structure (). The yet uncovered surface () is treated in a predetermined oxygen (O) containing atmosphere which additionally contains a dopant (D). Thereby, the silicon compound layer is oxidized and doped in a thin surface area ().

Method for manufacturing a photovoltaic cell structure

The present invention relates to a device for the treatment of a workpiece, in particular of a substantially flat substrate, comprising a table () for supporting the workpiece (), a flow generation apparatus () producing a gas flow () on a top face () of the table () in a region between the workpiece () and the top face () of the table (), on which gas flow the workpiece () is supported during the treatment.

Table for receiving a workpiece and method for processing a workpiece on such table

A photovoltaic device is provided that includes a substrate, a first transparent conductive layer positioned on the substrate, a plurality of transparent conductive rods positioned on the first transparent conductive layer and having a growth direction, the growth direction extending in a direction away from the substrate, a photovoltaically active layer covering the plurality of transparent conductive rods rods and a conductive layer positioned on the photovoltaically active layer.

Photovoltaic cell and methods for producing a photovoltaic cell

A thin film photovoltaic device on a substrate is being realized by a method for manufacturing a p-i-n junction semiconductor layer stack with a p-type microcrystalline silicon layer, a p-type amorphous silicon layer, a buffer silicon layer comprising preferably intrinsic amorphous silicon, an intrinsic type amorphous silicon layer, and an n-type silicon layer over the intrinsic type amorphous silicon layer.

Method for depositing an amorphous silicon film for photovoltaic devices with reduced light-induced degradation for improved stabilized performance

The process according to the invention makes it possible to deposit a transparent conductive oxide film on a toughened glass substrate placed inside a chamber. It consists in providing sources containing an oxygen-based liquid compound, a liquid compound of the metal intended to form the oxide, and a dopant in gaseous or liquid form, respectively; establishing a temperature between 130 and 300&#xb0; C. and a pressure between 0.01 and 2 mbar in the chamber; and then bringing said sources into communication with the chamber, which has the effect of vaporizing the liquids at their surface, of drawing them up into the chamber without having to use a carrier gas, and of making them react therein with the dopant so that the oxide layer is formed on the substrate.

Method of depositing an oxide layer on a substrate and a photovoltaic cell using said substrate

Growing community of inventors

Corcelles, Switzerland

Johannes Meier