Automotive Coalition for Traffic Safety, Inc.

Nanoplus Nanosystems and Technologies Gmbh

Advanced Photonics Applications Gmbh

Johannes Koeth

Nicolas Koslowski

Wolfgang Zeller

Lars Nähle

Tim Koslowski

A system for non-invasively measuring an analyte in a vehicle driver and controlling a vehicle based on a measurement of the analyte. At least one solid-state light source is configured to emit different wavelengths of light. A sample device is configured to introduce the light emitted by the at least one solid-state light source into tissue of the vehicle driver. One or more optical detectors are configured to detect a portion of the light that is not absorbed by the tissue of the vehicle driver. A controller is configured to calculate a measurement of the analyte in the tissue of the vehicle driver based on the light detected by the one or more optical detectors, determine whether the measurement of the analyte in the tissue of the vehicle driver exceeds a pre-determined value, and provide a signal to a device configured to control the vehicle.

System for non-invasive measurement of an analyte in a vehicle driver

The present invention provides a widely tunable, single mode emission semiconductor laser which comprises a semiconductor substrate, a first linear ridge waveguide which forms a first coupled cavity, and a second linear ridge waveguide which forms a second coupled cavity, with the first coupled cavity being separated from the second coupled cavity by a gap. The first and second coupled cavities comprise p-contacts and n-contacts for allowing laser currents I, Ito be injected into the first and second coupled cavities, respectively. The first and second coupled cavities comprise first and second heating resistors, respectively, for heating the first and second coupled cavities when heating currents H, Hare applied to the first and second heating resistors, respectively. A heating resistor is provided for heating the semiconductor substrate of the semiconductor laser so as to regulate the base temperature T of the chip (i.e., the semiconductor substrate).

Widely tunable, single mode emission semiconductor laser

Embodiments relate to a semiconductor laser having a multilayer structure including a ridge and two material removal areas adjacent to the ridge on either side, the multilayer structure being arranged on a substrate and a layer expansion plane being defined by a surface of the substrate, the ridge having at least one active region and at least the active region being spatially limited by passages between the ridge and the material removal areas in one dimension of the layer expansion plane, the active region having a layer structure for forming an interband cascade laser.

Semiconductor laser and method for producing a semiconductor laser comprising a feedback element

The invention relates to a semiconductor laser having at least one semiconductor substrate (), at least one active layer () arranged on the semiconductor substrate () which generates radiation in a wavelength region, at least one laser mirror () which is applied at one end of the active layer () perpendicular thereto, through which a part of the radiation generated in the active layer () emerges, and which is provided with a layer of absorbing material () said layer being suitable for reducing a gradient of the luminous-power/current characteristic for radiation emerging through the laser mirror ().

Semiconductor laser with absorber applied to a laser mirror

The invention relates to a DFB laser diode having a lateral coupling, which comprises at least one semi-conductor substrate (), at least one active layer () that is arranged on the semiconductor substrate, at least one ridge () that is arranged above the active layer (), at least one periodic surface structure () that is arranged next to the ridge () above the active layer () and at least one wave guide layer () comprising a thickness &#x2267;1 &#x3bc;m that is arranged below and/or above the active layer.

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Gerbrunn, Germany

Johannes Koeth