Asml Netherlands B.v.

Carl-zeiss-smt Ag

Asml Holding N.v.

Carl Zeiss Smt Gmbh

Other

Lsi Logic Corporation

Johannes Jacobus Matheus Baselmans

Johannes Catharinus Hubertus Mulkens

Bob Streefkerk

Christiaan Alexander Hoogendam

Sjoerd Nicolaas Lambertus Donders

Jeroen Johannes Sophia Maria Mertens

Hans Jansen

Erik Roelof Loopstra

Patricius Aloysius Jacobus Tinnemans

Marcel Mathijs Theodore Marie Dierichs

Johannes Christiaan Maria Jasper

Helmar Van Santen

Aleksey Yurievich Kolesnychenko

Franciscus Johannes Herman Maria Teunissen

Felix Godfried Peter Peeters

Adrianus Franciscus Petrus Engelen

Joeri Lof

Alexander Straaijer

Klaus Simon

Henrikus Herman Marie Cox

Jan-Gerard Cornelis Van Der Toorn

Antonius Theodorus Anna Maria Derksen

Frits Van Der Meulen

Richard Joseph Bruls

Bernardus Antonius Slaghekke

Martijn Houkes

Timotheus Franciscus Sengers

Sergei Shulepov

Jozef Maria Finders

Kars Zeger Troost

Herman Boom

Arno Jan Bleeker

Marco Koert Stavenga

Gerardus Petrus Matthijs Van Nunen

Jan Cornelis Van Der Hoeven

Cedric Desire Grouwstra

Markus Franciscus Antonius Eurlings

Heine Melle Mulder

Marcus Adrianus Van De Kerkhof

Pieter Willem Herman De Jager

Jan Bernard Plechelmus Van Schoot

Hendricus Johannes Maria Meijer

Huibert Visser

Matthew Lipson

Tammo Uitterdijk

Paul Van Der Veen

Paul Graeupner

Uwe Mickan

Henri Johannes Petrus Vink

Wim Tjibbo Tel

Andre Bernardus Jeunink

Haico Victor Kok

Hendrikus Robertus Marie Van Greevenbroek

Laurentius Catrinus Jorritsma

Carolus Johannes Catharina Schoormans

Jan Haisma

Azat M Latypov

Hans Van Der Laan

Christian Wagner

Theodorus Marinus Modderman

Cornelius Maria Rops

Koen Steffens

Ronald Van Der Ham

Antonius Johannes Josephus Van Dijsseldonk

Pieter-Jan Van Zwol

Theodorus Wilhelmus Polet

Willem Jurrianus Venema

Laurentius Cornelius De Winter

Wilhelmus Petrus De Boeij

Robbert Jan Voogd

Anastasius Jacobus Anicetus Bruinsma

Wouter Joep Engelen

Petrus Franciscus Van Gils

Hans Butler

Martinus Hendrikus Antonius Leenders

Johannes Hubertus Josephina Moors

Engelbertus Antonius Fransiscus Van Der Pasch

Levinus Pieter Bakker

Hugo Augustinus Joseph Cramer

Harry Sewell

Duan-Fu Stephen Hsu

Bernhard Gellrich

Franciscus Godefridus Casper Bijnen

Robert John Socha

Stanislav Y Smirnov

Nicholas K Eib

Karel Diederick Van Der Mast

Donis George Flagello

Lev Ryzhikov

Louis John Markoya

Andreas Wurmbrand

Neal Patrick Callan

Egbert Lenderink

Juergen Fischer

Robert-Han Munnig Schmidt

Bauke Jansen

Han Henricus Aldegonda Lempens

Marcel Koenraad Marie Baggen

Gerben Pieterse

Hako Botma

A two-dimensional diffraction grating for a phase-stepping measurement system for determining an aberration map for a projection system comprises a substrate provided with a square array of through-apertures, wherein the diffraction grating is self-supporting. It will be appreciated that for a substrate provided with a square array of through-apertures to be self-supporting at least some substrate material is provided between each through-aperture and the adjacent through apertures. A method of designing a two-dimensional diffraction grating for a phase-stepping measurement system for determining an aberration map for a projection system comprises: selecting a general geometry for the two-dimensional diffraction grating, the general geometry having at least one parameter; and selecting values for the least one parameter that result in a grating efficiency map for the two-dimensional diffraction grating so as to control the contributions to a first harmonic of a phase stepping signal.

Two-dimensional diffraction grating

Apparatuses and techniques for suppressing a zeroth order portion of a configured radiation beam. In some embodiments, an extreme ultraviolet (EUV) lithographic apparatus for forming an image on a substrate by use of an EUV radiation beam that is configured by a patterning device comprising a pattern of reflective regions and partially reflective regions, wherein the partially reflective regions are configured to suppress and apply a phase shift to a portion of the EUV radiation beam, may include a projection system. The projection system may be configured to suppress a zeroth order portion of a configured EUV radiation beam, and direct an unsuppressed portion of a configured EUV radiation beam towards a substrate to form an image on the substrate.

Imaging via zeroth order suppression

A method for determining a component of optical characteristic of a patterning process. The method includes obtaining (i) a plurality of desired features, (ii) a plurality of simulated features based on the plurality of desired features and an optical characteristic of a patterning apparatus, and (iii) a performance metric (e.g., EPE) related to a desired feature of the plurality of desired features and an associated simulated feature of the plurality of simulated features; determining a set of optical sensitivities of the patterning process by computing a change in value of the performance metric based on a change in value of the optical characteristic; and identifying, based on the set of optical sensitivities, a set of components (e.g., principal components) of the optical characteristic that include dominant contributors in changing the value of the performance metric.

Determining subset of components of an optical characteristic of patterning apparatus

A method for tuning a target apparatus of a patterning process. The method includes obtaining a reference performance, and measurement data of a substrate subjected to the patterning process at the target apparatus, the measurement data indicative of a performance of the target apparatus; determining a cause of a performance mismatch based on a difference between the reference performance and the performance of the target apparatus, wherein the cause includes an optical characteristic; and responsive to the cause, adjusting an optical parameter associated with an adjustable optical characteristic to reduce the performance mismatch in the optical characteristic.

Tuning patterning apparatus based on optical characteristic

A radiation system comprising a radiation source and a radiation conditioning apparatus, wherein the radiation source is configured to provide a radiation beam with wavelengths which extend from ultraviolet to infrared, and wherein the radiation conditioning apparatus is configured to separate the radiation beam into at least two beam portions and is further configured to condition the at least two beam portions differently.

Radiation system

Method of determining a photodetector contribution to a measurement of apodization of a projection system of an immersion lithography apparatus, the method comprising providing a beam of radiation, illuminating an object with the beam of radiation, using the projection system to project an image of the object through a liquid layer and onto a photodetector, performing a first set of measurements of radiation intensity across a pupil plane of the projection system at a first liquid layer thickness, performing a second set of measurements of radiation intensity across the pupil plane of the projection system at a different liquid layer thickness, determining a set of intensity differences from the first set of measurements and the second set of measurements, comparing the determined set of intensity differences to an expected set of intensity difference, and using the results of the comparison to determine the photodetector contribution to a measurement of apodization.

Lithographic method and apparatus

A method for quantifying the effect of pupil function variations on a lithographic effect within a lithographic apparatus is disclosed. The method comprises: determining a discrete, two-dimensional sensitivity map in a pupil plane of the lithographic apparatus, wherein the lithographic effect is given by the inner product of said sensitivity map with a discrete, two-dimensional pupil function variation map of a radiation beam in the pupil plane. The pupil plane of a lithographic apparatus generally refers to the exit pupil of a projection system of the lithographic apparatus. Pupil function variations may comprise: relative phase variations within the pupil plane and/or relative intensity variations within the pupil plane.

Lithographic apparatus and method

An optical system comprising: an illumination system configured, to form a periodic illumination mode comprising radiation in a pupil plane of the optical system having a spatial intensity profile which is periodic in at least one direction, a measurement system configured to measure a dose of radiation which is received in an field plane of the optical system as a function of position in the field plane, and a controller configured to: select one or more spatial frequencies in the field plane at which variation in the received dose of radiation as a function of position is caused by speckle, and determine a measure of the variation of the received dose of radiation as a function of position at the selected one or more spatial frequencies, the measure of the variation in the received dose being indicative of speckle in the field plane.

Optical system and method

A measurement method comprising using multiple radiation poles to illuminate a diffraction grating on a mask at a mask side of a projection system of a lithographic apparatus, coupling at least two different resulting diffraction orders per illumination pole through the projection system, using the projection system to project the diffraction orders onto a grating on a wafer such that a pair of combination diffraction orders is formed by diffraction of the diffraction orders, coupling the combination diffraction orders back through the projection system to detectors configured to measure the intensity of the combination diffraction orders, and using the measured intensity of the combination diffraction orders to measure the position of the wafer grating.

In immersion lithography after exposure of a substrate is complete, a detector is used to detect any residual liquid remaining on the substrate and/or substrate table.

Lithographic apparatus and device manufacturing method

A patterning device comprising a reflective marker, wherein the marker comprises: a plurality of reflective regions configured to preferentially reflect radiation having a given wavelength; and a plurality of absorbing regions configured to preferentially absorb radiation having the given wavelength; wherein the absorbing and reflective regions are arranged to form a patterned radiation beam reflected from the marker when illuminated with radiation, and wherein the reflective regions comprise a roughened reflective surface, the roughened reflective surface being configured to diffuse radiation reflected from the reflective regions, and wherein the roughened reflective surface has a root mean squared roughness of about an eighth of the given wavelength or more.

Patterning device

A substrate table of an immersion lithographic apparatus is disclosed which comprises a barrier configured to collect liquid. The barrier surrounds the substrate and is spaced apart from the substrate. In this way any liquid which is spilt from the liquid supply system can be collected to reduce the risk of contamination of delicate components of the lithographic projection apparatus.

A method comprising illuminating a patterning device (MA') comprising a plurality of patterned regions (-) of which each patterns a measurement beam (-), projecting, with a projection system (PL), the measurement beams onto a sensor apparatus () comprising a plurality of detector regions (-), making a first measurement of radiation when the patterning device and the sensor apparatus are positioned in a first relative configuration, moving at least one of the patterning device and the sensor apparatus so as to change the relative configuration of the patterning device to a second relative configuration, making a second measurement of radiation when the patterning device and the sensor apparatus are positioned in the second relative configuration in which at least some of the plurality of detector regions receive a different measurement beam to the measurement beam which was received at the respective detector region in the first relative configuration and determining aberrations caused by the projection system.

A method and apparatus for cleaning the inside of an immersion lithographic apparatus is disclosed. In particular, a liquid supply system of the lithographic apparatus may be used to introduce a cleaning fluid into a space between the projection system and the substrate table of the lithographic apparatus. Additionally or alternatively, a cleaning device may be provided on the substrate table and an ultrasonic emitter may be provided to create an ultrasonic cleaning liquid.

In a lithographic apparatus, a localized area of the substrate surface under a projection system is immersed in liquid. The height of a liquid supply system above the surface of the substrate can be varied using actuators. A control system uses feedforward or feedback control with input of the surface height of the substrate to maintain the liquid supply system at a predetermined height above the surface of the substrate.

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Oirschot, Netherlands

Johannes Jacobus Matheus Baselmans