Qimonda Ag

Infineon Technologies Ag

Johannes Heitmann

Tim Boescke

Peter Moll

Uwe Schroeder

Annette Saenger

Odo Wunnicke

Till Schloesser

Stephan Kudelka

Stefan Jakschik

Peter Lahnor

Elke Erben

Andreas Orth

Joerg Schumann

Lars Oberbeck

The present invention refers to an electrode comprising a first metallic layer and a compound comprising at least one of a nitride, oxide, and oxynitride of a second metallic material.

Electrode of an integrated circuit

A method for forming an integrated circuit having openings in a mold layer and for producing capacitors is disclosed. In one embodiment, nanotubes or nanowires are grown vertically on a horizontal substrate surface. The nanotubes or nanowires serve as a template for forming openings in a mold layer. The substrate is covered with a mold material after the formation of the nanowires or nanotubes. One embodiment provides mold layers having openings with a much higher aspect ratio.

Methods for forming an integrated circuit, including openings in a mold layer from nanowires or nanotubes

A method of fabricating an integrated circuit with a dielectric layer on a substrate is disclosed. One embodiment provides forming the dielectric layer in an amorphous state on the substrate, the dielectric layer having a crystallization temperature; a doping the dielectric layer; a forming of a covering layer on the dielectric layer at a temperature being equal to or below the crystallization temperature; and a heating of the dielectric layer to a temperature being equal to or greater than the crystallization temperature.

Integrated circuit with dielectric layer

The present invention relates to a method for depositing a dielectric material comprising a transition metal compound. After providing a substrate, a first pre-cursor comprising a transition metal compound and a second pre-cursor predominantly comprising at least one of water vapour, ammonia and hydrazine are successively applied on the substrate for forming a first layer of transition metal containing material. In a next step the first pre-cursor and a third pre-cursor comprising at least one of ozone and oxygen are successively applied on the first layer for forming a second layer of the transition metal containing material.

Deposition method for a transition-metal-containing dielectric

A capacitor for a dynamic semiconductor memory cell, a memory and method of making a memory is disclosed. In one embodiment, a storage electrode of the capacitor has a pad-shaped lower section and a cup-shaped upper section, which is placed on top of the lower section. A lower section of a backside electrode encloses the pad-shaped section of the storage electrode. An upper section of the backside electrode is enclosed by the cup-shaped upper section of the storage electrode. A first capacitor dielectric separates the lower sections of the backside and the storage electrodes. A second capacitor dielectric separates the upper sections of the backside and the storage electrodes. The electrode area of the capacitor is enlarged while the requirements for the deposition of the capacitor dielectric are relaxed. Aspect ratios for deposition and etching processes are reduced.

Storage capacitor for semiconductor memory cells and method of manufacturing a storage capacitor

Growing community of inventors

Dresden, Germany

Johannes Heitmann