International Business Machines Corporation

Johannes Georg Bednorz

Gerhard Ingmar Meijer

Carl A Mueller

Chung H Lam

Jochen D Mannhart

Siegfried Friedrich Karg

Rolf Allenspach

Wolfgang D Pohl

Walter Heinrich Riess

Daniel Widmer

Richard Stutz

David J Gundlach

Martin A Lanz

Evangelos Stavros Eleftheriou

Giovanni Cherubini

Michel Despont

John David Baniecki

Heike E Riel

Gerd K Binnig

Robert B Laibowitz

Darrell G Schlom

Jean-Pierre A Locquet

Peter Baechtold

Hermann E Nievergelt

Alejandro Gabriel Schrott

Eric Andrew Joseph

John Kenneth DeBrosse

Jonathan Zanhong Sun

James K Gimzewski

Celia E Yeack-Scranton

Pierre L Gueret

Ralph L Hollis, Jr

Hanspeter Ott

Bruno Reihl

Santos F Alvarado

Ingmar Meijer

Erich Maechler

Daniel F Widmer

Winfried Denk

Jean Pierre Locquet

Andrei Catana

Gerhard J Meijer

Carl Alexander Mueller

A new class of superconducting compositions, and methods for making and using them are described. These compositions exhibit superconductivity at temperatures in excess of 26&#xb0; K. and are comprised of transition metal oxides having at least one additional element therein which may create a multivalent state of the transition metal oxide. The composition can be a ceramic-like material having a layer-like crystalline structure, where the structure is distorted having either an oxygen excess or deficiency. An example is RE-AE-TM-O, where RE is a rare earth or rare earth-like element, AE is an alkaline earth element, TM is a transition metal element (such as Cu) and O is oxygen.

Superconductive compounds having high transition temperature, and methods for their use and preparation

A new class of superconducting compositions, and methods for making and using them are described. These compositions exhibit superconductivity at temperatures in excess of 26&#xb0; K. and are comprised of transition metal oxides having at least one additional element therein which may create a multi-valent state of the transition metal oxide. The composition can be a ceramic-like material having a layer-like crystalline structure, where the structure is distorted having either an oxygen excess or deficiency. An example is RE-AE-TM-O, where RE is a rare earth or rare earth-like element, AE is an alkaline earth element, TM is a transition metal element (such as Cu) and O is oxygen.

A microelectronic device or non-volatile resistance switching memory comprising the switching material for storing digital information. A process includes a step of depositing the switching material by a CMOS deposition technique at a temperature lower than 400&#xb0; C.

Non-volatile resistance switching memory

Processes, apparatus and systems for depositing a switching material that is switchable between conductivity states and where the states are persistent. The invention further relates to a microelectronic device or non-volatile resistance switching memory comprising the switching material for storing digital information. A process includes a step of depositing the switching material by a CMOS deposition technique at a temperature lower than 400&#xb0; C.

A memory cell () includes a resistive structure (), and at least two electrodes () coupled to the resistive structure (), wherein: the resistive structure () includes hydrogen, and the resistive structure () includes a material that exhibits a hydrogen ion mobility value of at least 10cm/Vs.

Programmable-resistance memory cell

A storage device including a storage medium for storing data in the form of topographic or magnetic marks. At least one probe is mounted on a common frame, the common frame and the storage medium designed for moving relative to each other for creating or detecting said marks. Each probe includes a tip facing the storage medium, a read sensing element, a write element and a capacitive platform, that forms a first electrode and is designed for a voltage potential applied to it independent from a control signal for said read sensing element and for said voltage potential applied to said capacitive platform being independent from a control signal for said write heating element. It further comprises a second electrode arranged in a fixed position relative to the storage medium forming a first capacitor together wherein said first electrode and a medium between the first and second electrode.

Data storage device

The present invention relates to a memory cell comprising: a resistive structure; at least two electrodes coupled to the resistive structure, and at least one hydrogen reservoir structure, wherein the application of an electrical signal to one of the at least two electrodes causes the electrical resistance of the resistive structure to be modified by altering a hydrogen-ion concentration in the resistive structure.

A field effect device includes a source electrode, a drain electrode spaced laterally apart from the source electrode, a channel formed between the source electrode and the drain electrode, and a gate electrode separated from the channel by an insulating layer. The channel includes a switching material that is reversibly switchable between a lower conductivity state and a higher conductivity state by at least one of: (i) application of a predetermined voltage between the source electrode and the drain electrode or between the gate electrode and at least one of the source electrode and the drain electrode, (ii) application of a voltage or a current to the switching material in the channel, and (iii) application of at least one of heat and light. Each of the conductivity states is persistent without the need for a sustaining excitation signal including an electrical field, heat and/or light applied to the device.

Field effect device with a channel with a switchable conductivity

A memory element comprises a first number of electrodes and a second number of electrically conducting channels between sub-groups of two of said electrodes, the channels exhibiting an electrical resistance that is reversibly switchable between different states, wherein the first number is larger than two and the second number is larger than the first number divided by two. The electrically conducting channels may be provided in transition metal oxide material, which exhibits a reversibly switchable resistance that is attributed to a switching phenomenon at the interfaces between the electrodes and the transition metal oxide material.

Programmable non-volatile resistance switching device

A nonvolatile memory cell includes a bipolar programmable storage element operative to store a logic state of the memory cell, and a metal-oxide-semiconductor device including first and second source/drains and a gate. A first terminal of the bipolar programmable storage element is adapted for connection to a first bit line. The first source/drain is connected to a second terminal of the bipolar programmable storage element, the second source/drain is adapted for connection to a second bit line, and the gate is adapted for connection to a word line.

Enhanced programming performance in a nonvolatile memory device having a bipolar programmable storage element

A nonvolatile memory array includes a plurality of word lines, a plurality of bit lines, a plurality of source lines, and a plurality of nonvolatile memory cells. Each of at least a subset of the plurality of memory cells has a first terminal connected to one of the plurality of word lines, a second terminal connected to one of the plurality of bit lines, and a third terminal connected to one of the plurality of source lines. At least one of the memory cells includes a bipolar programmable storage element operative to store a logic state of the memory cell, a first terminal of the bipolar programmable storage element connecting to one of a corresponding first one of the bit lines and a corresponding first one of the source lines, and a metal-oxide-semiconductor device including first and second source/drains and a gate. The first source/drain is connected to a second terminal of the bipolar programmable storage element, the second source/drain is adapted for connection to a corresponding second one of the bit lines, and the gate is adapted for connection to a corresponding one of the word lines. For at least a subset of the plurality of memory cells, each pair of adjacent memory cells along a given word line shares either the same bit line or the same source line.

Non-volatile memory architecture employing bipolar programmable resistance storage elements

A field effect device () includes a source electrode (), a drain electrode (), a channel () formed between the source electrode () and the drain electrode (), and a gate electrode () separated from the channel () by an insulating layer (), wherein the channel () comprises a switching material reversibly switchable between a lower conductivity state and a higher conductivity state, each of the conductivity states being persistent.

A device () with a switchable capacitance comprises a first and a second electrode () facing each other, a dielectric layer () between a first and a second capacitor electrode (), and a switching member () between the second electrode () and the dielectric layer (), the switching member () comprising a switching material reversibly switchable between a lower conductivity state and a higher conductivity state, each of the lower conductivity state and the higher conductivity state being persistent, wherein the capacitance of the device () depends on the conductivity state of the switching material.

Switchable capacitance and nonvolatile memory device using the same

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Wolfhausen, Switzerland

Johannes Georg Bednorz