U.S. Philips Corporation

Johannes F Cillessen

Mark Thomas Johnson

Martin Ouwerkerk

Jacobus Bernardus Giesbers

Ronald M Wolf

Johannes A Pistorius

Paulus W Blom

Lucas J Beckers

A semiconductor device includes a transparent switching element (1) with two connection electrodes (2, 3) of a transparent material and an interposed transparent channel region (4) of a semiconductor material provided with a transparent gate electrode (5) of a conductive material, separated from the channel region (4) by a transparent insulating layer (6). The semiconductor material is a degenerate semiconductor material with a basic material having a bandgap (10) between conduction band (11) and valence band (12) of electrons greater than 2.5 eV and a mobility of charge carriers greater than 10 cm.sup.2 /Vs provided with dopant atoms which form a fixed impurity energy level (13) adjacent or in the valence band (12) or conduction band (11) of the basic material. The degenerate semiconductor material is transparent because the absorption of visible light is not possible owing to the great bandgap (10), while also no absorption of visible light takes place through the impurity energy levels (13). The device is capable of comparatively fast switching.

Semiconductor device having a transparent switching element

The invention provides a method of manufacturing potassium-lithium-niobate crystals having a composition which corresponds to the formula

Potassium-lithium-niobate crystals and the manufacture thereof

Monocrystalline MnZn-ferroferrite material having a high Zn-content, and magnetic head comprising the said material. A monocrystalline MnZn-ferroferrite material for use in a magnetic head is described. The material corresponds to the formula

Monocrystalline MnZn-ferroferrite material having a high content of Zn,

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Eindhoven, Netherlands

Johannes F Cillessen