Asml Netherlands B.v.

Carl-zeiss-smt Ag

Asml Holding N.v.

Carl Zeiss Smt Gmbh

Other

Lam Research Corporation

Johannes Catharinus Hubertus Mulkens

Bob Streefkerk

Christiaan Alexander Hoogendam

Erik Roelof Loopstra

Sjoerd Nicolaas Lambertus Donders

Jeroen Johannes Sophia Maria Mertens

Johannes Jacobus Matheus Baselmans

Joeri Lof

Alexander Straaijer

Helmar Van Santen

Aleksey Yurievich Kolesnychenko

Klaus Simon

Hans Jansen

Joannes Theodoor De Smit

Roelof Aeilko Siebrand Ritsema

Timotheus Franciscus Sengers

Hendricus Johannes Maria Meijer

Antonius Theodorus Anna Maria Derksen

Erik Theodorus Maria Bijlaart

Hans Butler

Frank Van Schaik

Marcel Mathijs Theodore Marie Dierichs

Bernardus Antonius Slaghekke

Theodorus Marinus Modderman

Arie Jeffrey Den Boef

Patricius Aloysius Jacobus Tinnemans

Sergei Shulepov

Jacobus Johannus Leonardus Hendricus Verspay

Franciscus Johannes Herman Maria Teunissen

Matthew Lipson

Herman Boom

Felix Godfried Peter Peeters

Martinus Hendrikus Antonius Leenders

Joost Jeroen Ottens

Marcus Adrianus Van De Kerkhof

Henrikus Herman Marie Cox

Marco Koert Stavenga

Jan-Gerard Cornelis Van Der Toorn

Frits Van Der Meulen

Mark Kroon

Martijn Houkes

Richard Joseph Bruls

Marcel Beckers

Paul Van Der Veen

Neal Patrick Callan

Richard Moerman

Johannes Christiaan Maria Jasper

Nicolaas Ten Kate

Jozef Maria Finders

Jan Bernard Plechelmus Van Schoot

Erik Henricus Egidius Catharina Eummelen

Paulus Martinus Maria Liebregts

Tammo Uitterdijk

Uwe Mickan

Nicolaas Rudolf Kemper

Michel Riepen

Harry Sewell

Heine Melle Mulder

Jozef Petrus Henricus Benschop

Louis John Markoya

Marinus Aart Van Den Brink

Paul Graeupner

Wilhelmus Petrus De Boeij

Cédric Désiré Grouwstra

Danny Maria Hubertus Philips

Markus Deguenther

Levinus Pieter Bakker

Jan Haisma

Coen Adrianus Verschuren

Ronald Van Der Ham

Koen Steffens

Steven George Hansen

Huibert Visser

Michael Kubis

Marinus Jochemsen

Robert-Han Munnig Schmidt

Borgert Kruizinga

Vadim Yevgenyevich Banine

Jun Ye

Yu Long Cao

Richard Stephan Wise

Johannes Hubertus Josephina Moors

Richard Johannes Franciscus Van Haren

Everhardus Cornelis Mos

Wim Tjibbo Tel

Girish Anant Dixit

Koen Jacobus Johannes Maria Zaal

Roelof Frederik De Graaf

Theodorus Petrus Maria Cadee

Hernes Jacobs

Rogier Hendrikus Magdalena Cortie

Peter Ten Berge

Noud Jan Gilissen

Marco Baragona

Nader Shamma

David Bessems

Jen-Shiang Wang

Marcus Martinus Petrus Adrianus Vermeulen

Henricus Johannes Lambertus Megens

Peter Hanzen Wardenier

A lithographic apparatus includes a mask correction system configured to controllably and locally alter a property of a mask, for example transmissivity, transmissivity to a particular polarization state, birefringence and/or geometry. The mask correction system, in an embodiment, directs a beam of radiation onto a spot of the mask, the mask being scanned relative to the mask correction system. The mask correction system may include an arrangement to irradiate multiplespots on the mask substantially simultaneously.

Lithographic apparatus, device manufacturing method, and method of correcting a mask

A defect prediction method for a device manufacturing process involving processing a portion of a design layout onto a substrate, the method including: identifying a hot spot from the portion of the design layout; determining a range of values of a processing parameter of the device manufacturing process for the hot spot, wherein when the processing parameter has a value outside the range, a defect is produced from the hot spot with the device manufacturing process; determining an actual value of the processing parameter; determining or predicting, using the actual value, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the hot spot with the device manufacturing process.

Computational wafer inspection

An electron beam inspection apparatus, the apparatus including a plurality of electron beam columns, each electron beam column configured to provide an electron beam and detect scattered or secondary electrons from an object, and an actuator system configured to move one or more of the electron beam columns relative to another one or more of the electron beam columns, the actuator system including a plurality of first movable structures at least partly overlapping a plurality of second movable structures, the first and second movable structures supporting the plurality of electron beam columns.

Method and apparatus for inspection

A method of determining a characteristic of one or more processes for manufacturing features on a substrate, the method including: obtaining image data of a plurality of features on a least part of at least one region on a substrate; using the image data to obtain measured data of one or more dimensions of each of at least some of the plurality of features; determining a statistical parameter that is dependent on the variation of the measured data of one or more dimensions of each of at least some of the plurality of features; determining a probability of defective manufacture of features in dependence on a determined number of defective features in the image data; and determining the characteristic of the one or more processes to have the probability of defective manufacture of features and the statistical parameter.

Method for characterizing a manufacturing process of semiconductor devices

A difficulty of contamination interfering with a grid plate positional measurement system is addressed. In one embodiment contamination is prevented from coming into contact with the grating or the sensor. In an embodiment, surface acoustic waves are used to detach contamination from a surface of the grating or sensor.

Lithographic apparatus and device manufacturing method

An electron beam inspection apparatus, the apparatus including a plurality of electron beam columns, each electron beam column configured to provide an electron beam and detect scattered or secondary electrons from an object, and an actuator system configured to move one or more of the electron beam columns relative to another one or more of the electron beam columns. The actuator system may include a plurality of first movable structures at least partly overlapping a plurality of second movable structures, the first and second movable structures supporting the plurality of electron beam columns.

A method, and associated apparatus and computer program, to determine corrections for a parameter of interest, such as critical dimension, of a patterning process. The method includes determining an exposure control correction for an exposure control parameter and, optionally, determining a process control correction for a process control parameter, based upon a measurement of the parameter of interest of a structure, and an exposure control relationship and a process control relationship. The exposure control relationship describes the dependence of the parameter of interest on the exposure control parameter and the process control relationship describes the dependence of the parameter of interest on the process control parameter. The exposure control correction and process control correction may be co-optimized to minimize variation of the parameter of interest of subsequent exposed and processed structures relative to a target parameter of interest.

Method of controlling a patterning process, lithographic apparatus, metrology apparatus lithographic cell and associated computer program

A lithographic projection apparatus is disclosed in which a space between the projection system and the substrate is filled with a liquid. An edge seal member at least partly surrounds the substrate or other object on a substrate table to prevent liquid loss when edge portions of the substrate or other object are, for example, imaged or illuminated. A lithographic projection apparatus includes a support structure configured to hold a patterning device, the patterning device configured to pattern a beam of radiation according to a desired pattern; a substrate table configured to hold a substrate; a projection system configured to project the patterned beam onto a target portion of the substrate; a liquid supply system configured to provide liquid to a space between the projection system and the substrate; and a shutter configured to isolate the space from the substrate or a space to be occupied by a substrate.

A method including obtaining a measurement and/or simulation result of a pattern after being processed by an etch tool of a patterning system, determining a patterning error due to an etch loading effect based on the measurement and/or simulation result, and creating, by a computer system, modification information for modifying a patterning device and/or for adjusting a modification apparatus upstream in the patterning system from the etch tool based on the patterning error, wherein the patterning error is converted to a correctable error and/or reduced to a certain range, when the patterning device is modified according to the modification information and/or the modification apparatus is adjusted according to the modification information.

Method and apparatus to correct for patterning process error

A lithographic projection apparatus includes a support structure to hold a patterning device, the patterning device configured to pattern a beam of radiation according to a desired pattern; a projection system to project the patterned beam onto a target portion of a substrate; a substrate table configured to hold the substrate, the substrate table including a support surface to support an intermediary plate between the projection system and at least one of the substrate and an object positioned on the substrate table and not in contact with the at least one of the substrate and the object; and a liquid supply system to provide a liquid, through which the beam is to be projected, in a space between the projection system and the at least one of the substrate and the object.

A lithographic projection apparatus is disclosed in which a liquid supply system provides a liquid between the projection system and the substrate. An active drying station is provided to actively remove the liquid from the substrate W or other objects after immersion of all or part of a surface of the substrate W or other objects.

Active drying station and method to remove immersion liquid using gas flow supply with gas outlet between two gas inlets

In immersion lithography after exposure of a substrate is complete, a detector is used to detect any residual liquid remaining on the substrate and/or substrate table.

A substrate table of an immersion lithographic apparatus is disclosed which comprises a barrier configured to collect liquid. The barrier surrounds the substrate and is spaced apart from the substrate. In this way any liquid which is spilt from the liquid supply system can be collected to reduce the risk of contamination of delicate components of the lithographic projection apparatus.

Growing community of inventors

Waalre, Netherlands

Johannes Catharinus Hubertus Mulkens