Sensirion Ag

Sensirion Holding Ag

Invensense, Inc.

Johannes Bühler

Felix Mayer

Lukas Bürgi

Werner Hunziker

Moritz Lechner

Matthias Streiff

Marc Von Waldkirch

Zeljko Mrcarica

David Pustan

Robert Sunier

René Hummel

Cyrill Kuemin

Samuel Fuhrer

Ralph Steiner Vanha

Christoph Schanz

Chung-Hsien Lin

Lukas Steinmann

Stefan Wengle

Marc Stämpfli

Marc Wälti

A differential pressure sensor comprises a membrane arranged over a cavity on a semiconductor substrate. A lid layer is arranged at the top side of the device and comprises an access opening for providing access to the top side of the membrane. A channel extends laterally from the cavity and intersects with a bore. The bore is formed by laser drilling from the bottom side of the substrate and provides access to the bottom side of the membrane. The bore extends all through the substrate and optionally into the lid layer.

Method for manufacturing an intergrated pressure sensor

A pressure sensor is manufactured by joining two wafers, the first wafer comprising CMOS circuitry and the second being an SOI wafer. A recess is formed in the top material layer of the first wafer, which is covered by the silicon layer of the second wafer to form a cavity. Part or all of the substrate of the second wafer is removed to forming a membrane from the silicon layer. Alternatively, the cavity can be formed in the second wafer. The second wafer is electrically connected to the circuitry on the first wafer. This design allows to use standard CMOS processes for integrating circuitry on the first wafer.

Pressure sensor having a chamber and a method for fabricating the same

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Uster, Switzerland

Johannes Bühler