Sensirion Ag

Invensense, Inc.

Johannes Buhler

Chung-Hsien Lin

Felix Mayer

Moritz Lechner

Rene Hummel

Marc Von Waldkirch

Stephan Braun

Marion Hermersdorf

Cyrill Kuemin

Rafael Santschi

A pressure sensor comprises a first substrate containing a processing circuit integrated thereon and a cap attached to the first substrate. The cap includes a container, a holder, and one or more suspension elements for suspending the container from the holder. The container includes a cavity and a deformable membrane separating the cavity and a port open to an outside of the pressure sensor. The container is suspended from the holder such that the deformable membrane faces the first substrate and such that a gap is provided between the deformable membrane and the first substrate which gap contributes to the port. Sensing means are provided for converting a response of the deformable membrane to pressure at the port into a signal capable of being processed by the processing circuit.

Reduced stress pressure sensor

A portable electronic device and related methods are described using an integrated chemical sensor linked to a chemical sensor processing unit and being sensitive to the concentration of a component in a sample of air and further including an operating system providing instructions for the control of the portable device, wherein the chemical processing unit uses under operating conditions a first set of instructions and a second set of instructions stored within the portable device, wherein the first set of instructions is part of the operating system level of instructions and the second set of instructions is part of a user of instructions with the second set of instructions being linked to the operating system via a plugin interface and wherein the second set of instructions is communicated to the portable device from a remote computing system based on access to measurements and/or operating conditions of the chemical sensor.

Portable electronic device with integrated chemical sensor and method of operating thereof

A CMOS gas sensor comprises a membrane () extending over an opening () of a silicon substrate (). A patch () of sensing material is arranged on the membrane () and in contact with electrodes () of platinum. A heater () of tungsten is located in or on the membrane () at the location of the patch () of metal-oxide sensing material. Combining platinum electrodes () with a tungsten heater () on top of a CMOS structure provides a gas sensor of high reliability and stability.

CMOS gas sensor and method for manufacturing the same

Growing community of inventors

Uster, Switzerland

Johannes Buhler