Infineon Technologies Ag

Infineon Technologies Austria Ag

Johannes Baumgartl

Hans-Joachim Schulze

Ingo Muri

Iris Moder

Oliver Hellmund

Thomas Christian Neidhart

Anton Mauder

Matthias Kuenle

Francisco Javier Santos Rodriguez

Oliver Blank

Franz Hirler

Markus Zundel

Hans Weber

Manfred Engelhardt

Carsten Ahrens

Gabor Mezoesi

Andreas Moser

Ralf Siemieniec

Martin Poelzl

Gerhard Schmidt

Michael Hutzler

Ravi Keshav Joshi

Michael Treu

Daniel Schloegl

Stefan Sedlmaier

Manfred Kotek

Erwin Lercher

Jacob Tillmann Ludwig

Juergen Steinbrenner

Helmut Oefner

Georg Ehrentraut

Christoph Weiss

Andreas Haghofer

Christoph Gruber

Christian Krenn

Markus Harfmann

Frank Dieter Pfirsch

Rolf Weis

Peter Irsigler

Olaf Storbeck

Alfred Kersch

Annette Saenger

Barbara Eichinger

Minghao Jin

Rudolf Rothmaler

Wolfgang Wagner

Volodymyr Komarnitskyy

Christian Illemann

Stephanie Delage

Doris Sommer

A semiconductor device includes a semiconductor substrate having a first dopant and a second dopant. A covalent atomic radius of a material of the semiconductor substrate is i) larger than a covalent atomic radius of the first dopant and smaller than a covalent atomic radius of the second dopant, or ii) smaller than the covalent atomic radius of the first dopant and larger than the covalent atomic radius of the second dopant. The semiconductor device further includes a semiconductor layer on the semiconductor substrate and semiconductor device elements in the semiconductor layer. A vertical concentration profile of the first dopant decreases along at least 80% of a distance between an interface of the semiconductor substrate and the semiconductor layer to a surface of the semiconductor substrate opposite to the interface.

Semiconductor device having semiconductor device elements in a semiconductor layer

A CVD reactor, including a deposition chamber housing a first susceptor and a second susceptor, the first susceptor having a cavity for receiving a first substrate, the first substrate having a front surface and a back surface, the second susceptor having a cavity for receiving a second substrate, the second substrate having a front surface and a back surface, and the first susceptor and the second susceptor are disposed so that the front surface of the first substrate is opposite to the front surface of the second substrate thereby forming a portion of a gas flow channel.

Apparatus and method for chemical vapor deposition process for semiconductor substrates

A method of manufacturing a semiconductor device includes providing a semiconductor substrate having opposing first and second main surfaces and first and second dopants. A covalent atomic radius of a material of the substrate is i) larger than a covalent atomic radius of the first dopant and smaller than that of the second dopant, or ii) smaller than the covalent atomic radius of the first dopant and larger than that of the second dopant. A vertical extension of the first dopant into the substrate from the first main surface ends at a bottom of a substrate portion at a first vertical distance to the first main surface. The method further includes forming a semiconductor layer on the first main surface, forming semiconductor device elements in the semiconductor layer, and reducing a thickness of the substrate by removing material from the second main surface at least up to the substrate portion.

Semiconductor device and manufacturing method

A semiconductor device includes a first epitaxial layer, a second epitaxial layer disposed below the first epitaxial layer, a conductive layer disposed below and directly contacting the second epitaxial layer, and a plurality of spacers disposed between the second epitaxial layer and the conductive layer. The conductive layer includes a metal. The plurality of spacers include a bulk semiconductor material.

Devices with backside metal structures and methods of formation thereof

A semiconductor wafer includes an alignment mark contained within in a kerf region of the semiconductor wafer. The alignment mark includes a groove vertically extending from a main surface of the semiconductor wafer to a bottom surface of the groove, and at least one tin protruding from the bottom surface of the groove. The groove has a rectangular shape with four sidewalls and four inside corners, with each of the four inside corners facing the at least one fin. A minimum distance between the at least one fin and a nearest one of the four inside corners is at least 25 &#x3bc;m.

Method of manufacturing a semiconductor device with epitaxial layers and an alignment mark

A method for forming a power semiconductor device is provided. The method includes: providing a semiconductor wafer grown by a Czochralski process and having a first side; forming an n-type substrate doping layer in the semiconductor wafer at the first side, the substrate doping layer having a doping concentration of at least 10/cm; and forming an epitaxy layer on the first side of the semiconductor wafer after forming the n-type substrate doping layer.

Method for manufacturing a power semiconductor device having a reduced oxygen concentration

An alignment mark in a process surface of a semiconductor layer includes a groove with a minimum width of at least 100 &#x3bc;m and a vertical extension in a range 100 nm to 1 &#x3bc;m. The alignment mark further includes at least one fin within the groove at a distance of at least 60 &#x3bc;m to a closest one of inner corners of the groove.

A first dose of first dopants is introduced into a semiconductor body having a first surface. A thickness of the semiconductor body is increased by forming a first semiconductor layer on the first surface of the semiconductor body. While forming the first semiconductor layer a final dose of doping in the first semiconductor layer is predominantly set by introducing at least 20% of the first dopants from the semiconductor body into the first semiconductor layer.

Doping method

A semiconductor device includes a trench extending through a semiconductor substrate and an epitaxial layer disposed over a first side of the semiconductor substrate. The epitaxial layer partially fills a portion of the trench. The semiconductor device further includes a back side metal layer disposed over a second side of the semiconductor substrate. The back side metal layer extends into the trench and fills the remaining portion of the trench. The epitaxial layer partially filling the trench contacts the back side metal layer filling the remaining portion within the trench.

A semiconductor device includes a semiconductor body having opposite first and second surfaces, a drift or base zone in the semiconductor body and an oxygen diffusion barrier in the semiconductor body. The drift or base zone is located between the first surface and the oxygen diffusion barrier and directly adjoins the oxygen diffusion barrier. The semiconductor device further includes first and second load terminal contacts. At least one of the first and the second load terminal contacts is electrically connected to the semiconductor body through the first surface.

Semiconductor device having an oxygen diffusion barrier

In accordance with an embodiment of the present invention, a method of fabricating a semiconductor device includes forming openings partially filled with a sacrificial material, where the openings extend into a semiconductor substrate from a first side. A void region is formed in a central region of the openings. An epitaxial layer is formed over the first side of the semiconductor substrate and the openings, where the epitaxial layer covers the void region. From a second side of the semiconductor substrate opposite to the first side, the semiconductor substrate is thinned to expose the sacrificial material. The sacrificial material in the openings is removed and the epitaxial layer is exposed. A conductive material is deposited on the exposed surface of the epitaxial layer.

Method of wafer thinning and realizing backside metal structures

A method of producing a semiconductor device is presented. The method comprises: providing a semiconductor substrate having a surface; epitaxially growing, along a vertical direction (Z) perpendicular to the surface, a back side emitter layer on top of the surface, wherein the back side emitter layer has dopants of a first conductivity type or dopants of a second conductivity type complementary to the first conductivity type; epitaxially growing, along the vertical direction (Z), a drift layer having dopants of the first conductivity type above the back side emitter layer, wherein a dopant concentration of the back side emitter layer is higher than a dopant concentration of the drift layer; and creating, either within or on top of the drift layer, a body region having dopants of the second conductivity type, a transition between the body region and the drift layer forming a pn-junction (Zpn). Epitaxially growing the drift layer includes creating, within the drift layer, a dopant concentration profile (P) of dopants of the first conductivity type along the vertical direction (Z), the dopant concentration profile (P) in the drift layer exhibiting a variation of a concentration of dopants of the first conductivity type along the vertical direction (Z).

Producing a semiconductor device by epitaxial growth

An integrated circuit device including a chip die having a first area with a first thickness surrounding a second area with a second thickness, the first thickness is greater than the second thickness, the chip die having a front-side and a back-side, at least one passive electrical component provided at least one of in or over the chip die in the first area on the front-side, and at least one active electrical component provided at least one of in or over the chip die in the second area on the front-side.

Monolithically integrated chip including active electrical components and passive electrical components with chip edge stabilization structures

First reinforcement stripes are formed on a process surface of a base substrate. A first epitaxial layer covering the first reinforcement stripes is formed on the first process surface. Second reinforcement stripes are formed on the first epitaxial layer. A second epitaxial layer covering the second reinforcement stripes is formed on exposed portions of the first epitaxial layer. Semiconducting portions of transistor cells are formed in or portions of micro electromechanical structures are formed from the second epitaxial layer.

Method of manufacturing semiconductor devices with transistor cells and semiconductor device

Growing community of inventors

Riegersdorf, Austria

Johannes Baumgartl