Asml Netherlands B.v.

Johannes Aldegonda Theodorus Marie Van Den Homberg

Johannes Jacobus Matheus Baselmans

Engelbertus Antonius Fransiscus Van Der Pasch

Hako Botma

Alexander Viktorovych Padiy

Carolus Johannes Catharina Schoormans

Andreas Johannes Antonius Brouns

Maksym Yuriiovych Sladkov

Gijsbertus Geert Poorter

Roelof Harm Klunder

An electron beam transport system for controlling the position of two different electron beams comprises: a main electron beam transport module; a first input electron beam transport module; a second input electron beam transport module; and a controller. The main electron beam transport module comprises a beam monitoring device disposed at a measurement position. The first input electron beam transport module comprises a first actuator for applying a perturbation to a transverse position of a first electron beam at a first actuation point. The second input electron beam transport module comprises a second actuator for applying a perturbation to a transverse position of a second electron beam at a second actuation point. The controller is operable to receive a signal from the beam monitoring device and to send control signals to the first actuator and the second actuator. The controller is operable to determine a first quantity indicative of a difference in a transverse position of the first and second electron beams and a second quantity indicative of an average transverse position of the first and second electron beams. The controller is further operable to control the trajectories of the first and second electron beams independently by implementing a first control loop that iteratively attempts to reduce the first quantity by using the first actuator to perturb a trajectory of the first electron beam, and a second control loop that iteratively perturbs a trajectory of the second electron beam using the second actuator such that the average transverse position of the two different electron beams moves towards a desired transverse position.

Electron beam transport system

A lithographic method for measuring a position of a target grating with a mask sensor apparatus which comprises a plurality of detector modules each comprising a diffraction grating located at a mask side of a projection system of a lithographic apparatus and an associated detector, the method comprising a first step of measuring first intensities of a combination of diffraction orders diffracted from the target grating while the mask sensor apparatus is moved relatively to the target grating along a first direction; a second step of displacing the mask sensor apparatus relative to the target grating in a second direction, wherein a size of the relative displacement is proportional to a spatial frequency of a potential error; and a third step of measuring second intensities of the combination of diffraction orders diffracted from the target grating while the mask sensor apparatus is moved relatively to the target grating along the first direction.

Lithographic method and apparatus

A lithographic apparatus is provided with a sensor. The sensor comprises a frame that defines a space that is crossed multiple times by wire. Detection electronics are connected to the wire and configured to detect a change of temperature of the wire due to infrared radiation being incident upon the wire. The detection electronics are further configured to provide an output signal in the event that a change of temperature of the wire is detected.

Lithographic apparatus and method

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Nederweert, Netherlands

Johannes Aldegonda Theodorus Marie Van Den Homberg