U.S. Philips Corporation

Johannes A DePoorter

Rudolf P Tijburg

Hermanus A Van De Pas

Gerardus L Dinghs

Peter J deWaard

In the known method, a plate of a heat-conducting material, for example silicon, is subdivided by means of grooves into blocks which remain connected to one another along break-off edges. The plate is metallized on two sides and (locally) provided with layer-shaped regions comprising solder at the upper side, the diode laser being fastened within each region, after which the blocks are separated from one another by breaking-off. A disadvantage of this method is that the blocks thus obtained are not suitable for a final mounting in which the radiation beam of the diode laser is perpendicular to the carrier plate on which the support body is fastened. In a method according to the invention, mutually parallel grooves are provided in the plate and the plate is subdivided into strips whose longitudinal direction is perpendicular to the direction of the grooves which are at most two support bodies wide and whose side surfaces are substantially smooth and flat, and the upper surface and the side surfaces of the strips are provided with a conductive layer in one step, after which the layer-shaped regions comprising solder are provided on one of these surfaces. This method is simple, comprises comparatively few steps, and results in a large number of interconnected support bodies which are suitable for mounting with the support body tilted through 90.degree.. This renders it possible to mount diode lasers on the support bodies before the latter are separated and to mount them finally relative to a carrier plate in such a way that the radiation beam is approximately perpendicular to the carrier plate. Preferably, strips having a width of exactly one support body are formed.

Method of manufacturing a block-shaped support body for a semiconductor

A semiconductor laser having mirror faces serving as resonators, in which the active laser region includes end zones adjoining the mirror faces which have implanted ions, preferably protons, with associated crystal damage. The end zones have a length which is at least equal to the diffusion length of the recombining charge carriers in the end zones. As a result of the high recombination rate in the end zones substantially no non-radiating recombination occurs at the mirror faces, so that mirror erosion is avoided.

Growing community of inventors

Eindhoven, Netherlands

Johannes A DePoorter