Osram Opto Semiconductors Gmbh

Osram Opto Semiconductor Gmbh

Johann Ramchen

Karl Weidner

Michael Zitzlsperger

Walter Wegleiter

Bernd Barchmann

Axel Kaltenbacher

David Racz

Stefan Grötsch

Hans-Christoph Gallmeier

Georg Bogner

Jörg Erich Sorg

Simon Jerebic

Magnus Ahlstedt

Markus Schneider

Krister Bergenek

Bert Braune

Gertrud Kräuter

Michael Wittmann

Stefan Gruber

Christina Keith

Hans Wulkesch

An optoelectronic semiconductor device includes a carrier having a carrier top side, at least one optoelectronic semiconductor chip arranged at the carrier top side and having a radiation main side remote from the carrier top side, at least one bonding wire, at least one covering body on the radiation main side, and at least one reflective potting compound surrounding the semiconductor chip in a lateral direction and extending from the carrier top side at least as far as the radiation main side, wherein the bonding wire is completely covered by the reflective potting compound or completely covered by the reflective potting compound and the covering body, the bonding wire is fixed to the semiconductor chip in an electrical connection region on the radiation main side, and the electrical connection region is free of the covering body and covered partly or completely by the reflective potting compound.

Optoelectronic semiconductor component

An optoelectronic semiconductor component includes a carrier and at least one optoelectronic semiconductor chip mounted on the carrier top. The semiconductor component includes at least one bonding wire, via which the semiconductor chip is electrically contacted, and at least one covering body mounted on a main radiation side and projects beyond the bonding wire. At least one reflective potting compound encloses the semiconductor chip laterally and extends at least as far as the main radiation side of the semiconductor chip. The bonding wire is covered completely by the reflective potting compound or completely by the reflective potting compound together with the covering body.

A method for producing a radiation-emitting or radiation-receiving semiconductor component is specified. In a method step, a carrier body having a mounting surface is provided. In a further method step, a barrier frame is formed on the mounting surface, in such a way that the barrier frame laterally encloses a mounting region of the mounting surface. In a further method step, a radiation-emitting or radiation-receiving semiconductor chip is mounted within the mounting region on the mounting surface. The semiconductor chip is potted with a liquid lens material, wherein the lens material is applied to the mounting surface within the mounting region. The lens material is cured. The mounting surface, the barrier frame and the lens material are adapted to one another.

Method for producing at least one radiation-emitting and/or -receiving semiconductor component, and semiconductor component

A radiation-emitting component includes a semiconductor chip which has a first main surface, a second main surface on an opposite side from the first main surface and an active region that generates radiation; a carrier on which the semiconductor chip is fixed on the side of the second main surface; an output layer arranged on the first main surface of the semiconductor chip and forming a lateral output surface spaced apart from the semiconductor chip in a lateral direction, a recess tapering in a direction of the semiconductor chip being, formed in the output layer and deflecting radiation emerging from the first main surface during operation into the direction of the lateral output surface.

Radiation-emitting component and method for producing radiation-emitting components

An optoelectronic semiconductor component includes a carrier which has an upper side and a lower side opposite to the upper side. At least one radiation-emitting semiconductor device is disposed on the upper side and has a radiation emission surface, through which at least a portion of the electromagnetic radiation, which is generated during operation of the semiconductor device, leaves the semiconductor device. A radiation-absorbing layer is arranged to absorb ambient light, which impinges upon the component, such that an outer surface of the component facing away from the carrier appears black at least in places.

A method of producing an optoelectronic semiconductor component includes providing a carrier having a top side, an underside situated opposite the top side, and a plurality of connection areas arranged at the top side alongside one another in a lateral direction; applying a plurality of optoelectronic components arranged at a distance from one another in a lateral direction at the top side, the components having a contact area facing away from the carrier; applying protective elements to the contact and connection areas; applying an electrically insulating layer to exposed locations of the carrier, contact areas and protective elements; producing openings in the insulating layer by removing protective elements; and arranging an electrically conductive material on the insulating layer and in the openings, wherein the electrically conductive material connects a contact area to an assigned connection area.

Method for producing at least one optoelectronic semiconductor component

An electronic component has a housing body which comprises a semiconductor chip in a recess. The semiconductor chip in the recess is embedded in a casting compound made of a first plastic material having a first glass transition temperature. A cover element made of a second plastic material having a second glass transition temperature is arranged above the recess. The second glass transition temperature is lower than the first glass transition temperature.

Electronic component

An optoelectronic semiconductor component includes a radiation emitting semiconductor chip having a radiation coupling out area. Electromagnetic radiation generated in the semiconductor chip leaves the semiconductor chip via the radiation coupling out area. A converter element is disposed downstream of the semiconductor chip at its radiation coupling out area. The converter element is configured to convert electromagnetic radiation emitted by the semiconductor chip. The converter element has a first surface facing away from the radiation coupling out area. A reflective encapsulation encapsulates the semiconductor chip and portions of the converter element at side areas in a form-fitting manner. The first surface of the converter element is free of the reflective encapsulation.

A semiconductor device includes a radiation-emitting semiconductor chip, a carrier substrate and a film. The carrier substrate has electrically conductive contact tracks on a top side. The film is arranged on a radiation exit side of the chip, the radiation exit side being remote from the carrier substrate, and on the top side of the carrier substrate and has electrically conductive first conductor tracks. The film has perforations arranged such that the semiconductor chip can be electrically contact-connected to the first contact track of the carrier substrate via the first conductor track of the film.

Optoelectronic semiconductor device comprising a semiconductor chip, a carrier substrate and a film

An optoelectronic semiconductor component includes a substrate that has an upper side and an under side lying opposite the upper side. The substrate is formed with an electrically conductive mounting region, an electrically conductive connection region and an electrically isolating oxidation region. An optoelectronic part is arranged on the upper side of the substrate in the region of the mounting region. The oxidation region electrically isolates the mounting region from the connection region. The oxidation region extends, without interruption, from the upper side of the substrate to the underside of the substrate. The mounting region and the connection region are formed with aluminum and the oxidation region is formed with an oxide of the aluminum. The mounting region, the oxidation region and the connection region being are designed contiguously to form an entity.

An optoelectronic component includes a carrier having a first connection region and a second connection region, a radiation-emitting semiconductor chip having a base surface and a radiation exit surface opposite the base surface, wherein the semiconductor chip is arranged by the base surface on the carrier, a housing having a lower housing part arranged on the carrier and adjoining side flanks of the semiconductor chip, and an upper housing part arranged on the lower housing part and shaped as a reflector for radiation emitted by the semiconductor chip, and an electrical connection layer which leads from the radiation exit surface of the semiconductor chip via a part of the interface between the lower and the upper housing part and through the lower housing part to the first connection region on the carrier.

Optoelectronic component and method for producing it

An optoelectronic semiconductor component includes a carrier with a carrier top, at least one optoelectronic semiconductor chip mounted on the carrier top and having a radiation-transmissive substrate and a semiconductor layer sequence which includes at least one active layer that generates electromagnetic radiation, and a reflective potting material, wherein, starting from the carrier top, the potting material surrounds the semiconductor chip in a lateral direction at least up to half the height of the substrate.

An optoelectronic component has an optoelectronic semiconductor chip, a contact frame, a contact carrier, a first electrical connection zone and a second electrical connection zone electrically insulated from the first electrical connection zone, which each have a part of the contact frame and a part of the contact carrier, wherein the contact frame has a recess which separates the first electrical connection zone at least in places from the second electrical connection zone and into which the optoelectronic semiconductor chip projects, and wherein the contact frame has a contact element which connects the contact frame electrically with the optoelectronic semiconductor chip.

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Altdorf, Germany

Johann Ramchen