Nanoplus Gmbh

Nanoplus Nanosystems and Technologies Gmbh

Johann Peter Reithmaier

Lars Bach

Wolfgang Kaiser

Disclosed is a semiconductor laser in which the substrate comprises at least three independent functional sections in the direction of light wave propagation, said functional sections serving different functions and being individually triggered by means of electrodes via electrode leads. An intensification zone, a grid zone, and a phase adjustment zone are provided as functional sections. The light wave is optically intensified in the intensification zone while the phase of the advancing and returning wave is adjusted in the phase adjustment zone. The grid zone is used for selecting the wavelength and adjusting the intensity of coupling between the intensification zone and the phase adjustment zone.

Multisectional laser

A semiconductor laser with a semiconductor substrate, a laser layer arranged on the semiconductor substrate, a waveguide arranged parallel to the laser layer and a strip shaped grating structure is disclosed. The laser layer, the waveguide and the grating are arranged in a configuration which results in weak coupling between the laser light and the grating structure, so that the laser light interacts with an increased number of grating elements. A process for the production of such a semiconductor laser is also disclosed.

Semiconductor laser with a weakly coupled grating

Disclosed is a semiconductor laser () in which the substrate () comprises at least three independent functional sections () in the direction of light wave propagation (A), said functional sections () serving different functions and being individually triggered by means of electrodes () via electrode leads (). An intensification zone (), a grid zone (), and a phase adjustment zone () are provided as functional sections. The light wave is optically intensified in the intensification zone () while the phase of the advancing and returning wave is adjusted in the phase adjustment zone (). The grid zone () is used for selecting the wavelength and adjusting the intensity of coupling between the intensification zone () and the phase adjustment zone ().

A semiconductor laser with a semiconductor substrate, a laser layer arranged on the semiconductor substrate, a waveguide arranged parallel to the laser layer and a strip shaped grating structure is disclosed. The laser layer, the waveguide and the grating are arranged a configuration which results in weak coupling between the laser light and the grating structure, so that the laser light interacts with an increased number of grating elements. A process for the production of such a semiconductor laser is also disclosed.

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Würzburg, Germany

Johann Peter Reithmaier