Infineon Technologies Ag

Siemens Aktiengesellschaft

Johann Massoner

Hubert Rothleitner

Franz Wachter

A MEMS device and a method for manufacturing a MEMS device are disclosed. In an embodiment the MEMS device comprises a support having a cavity therethrough and a membrane extended over the cavity of the support, wherein the membrane is at least partially reinforced by graphene.

MEMS device and method for manufacturing the MEMS device

A driver circuit having series-connected high-side and low-side MOS switches with MOS transistors for driving a load, a temperature-limiting circuit and a current-limiting circuit, which is assigned to one of the two MOS transistors. In order to balance power losses between the high-side and low-side MOS switches, provision is made for the gate of the MOS transistor without the current-limiting circuit to be connected to ground via a voltage generator, whose voltage corresponds to a maximum drive voltage for this MOS transistor.

Balanced loss driver circuit including high-side/low-side MOS switches

An analog delay circuit configuration includes a switching stage. A capacitor is connected upstream of the switching stage. A controlled current source has a current being definitive for a charging state of the capacitor. The current source is clocked with a pulse-to-interval ratio of less than 1. A current mirror configuration reduces the current of the current source. An inverter stage is coupled to the current mirror configuration and has an output side connected to the capacitor.

Growing community of inventors

Villach, Austria

Johann Massoner