Osram Opto Semiconductors Gmbh

Osram Gmbh

Siemens Aktiengesellschaft

Osram Opto Semiconductor Gmbh

Johann Luft

Norbert Linder

Martin Rudolf Behringer

Tony Albrecht

Stephan Lutgen

Bruno Acklin

Werner Späth

Karl Joachim Ebeling

Alfred Lell

Berthold Hahn

Peter Brick

Herbert Brunner

Volker Härle

Georg Bogner

Wolfgang Schmid

Marc Philippens

Werner Spaeth

Franz Eberhard

Norbert Stath

Ulrich Steegmüller

Harald König

Ernst Nirschl

Heinz Haas

Martin Müller

Karl-Heinz Schlereth

Christian Hanke

Christian Karnutsch

Zeljko Spika

Wolfgang Teich

Joerg Heerlein

Thomas Knödl

Jörg Heerlein

Lutz Korte

Thomas KNÖDL

A method for manufacturing an optically pumped surface-emitting semiconductor laser device, wherein a surface-emitting semiconductor laser layer sequence having a quantum confinement structure is applied onto a common substrate. The surface-emitting semiconductor laser layer sequence outside an intended laser region is removed and a region is exposed. An edge-emitting semiconductor layer sequence is applied onto the exposed region over the common substrate, wherein the exposed region is exposed via the removing step, and the exposed region is suitable for transmitting pump radiation into the quantum confinement structure. A current injection path is then formed in the edge-emitting semiconductor layer sequence.

Method for manufacture of optically pumped, surface-emitting semiconductor laser device

A sensor system with a lighting device and a detector device is specified. The lighting device is provided for emitting laser radiation of a first wavelength and laser radiation of a second wavelength different from the first. The detector device is provided for detecting electromagnetic radiation of the first and the second wavelength.

Sensor system with a lighting device and a detector device

The invention is directed to an optically pumped surface-emitting semiconductor laser device having at least one radiation-generating quantum well structure and at least one pump radiation source for optically pumping the quantum well structure, whereby the pump radiation source comprises an edge-emitting semiconductor structure. The radiation-generating quantum well structure and the edge-emitting semiconductor structure are epitaxially grown on a common substrate. A very efficient and uniform optical pumping of the radiation-generating quantum well structure is advantageously possible with this monolithically produced semiconductor laser device. Methods for manufacturing inventive semiconductor laser devices are also specified.

Optically pumped, surface-emitting semiconductor laser device and method for the manufacture thereof

An edge emitting semiconductor laser containing a plurality of monolithically integrated laser diodes (). Each laser diode () contains an active zone (), with the active zones () being in each case arranged between waveguide layers (), the waveguide layers () in each case adjoining a cladding layer () at a side remote from the active zone (). The cladding layers () comprise inner cladding layers (), which are arranged above a bottommost active zone () and below a topmost active zone (), and outer cladding layers () which are arranged below the bottommost active zone () or above the topmost active zone (). The inner cladding layers () have a smaller thickness than the outer cladding layers ().

Edge emitting semiconductor laser comprising a plurality of monolithically integrated laser diodes

An optically pumped, radiation-emitting semiconductor device having a semiconductor body which includes at least one pump radiation source () and a surface-emitting quantum well structure (), the pump radiation source () and the quantum well structure () being monolithically integrated. The pump radiation source () generates pump radiation () for optically pumping the quantum well structure (), a recess () for introducing the pump radiation () in the quantum well structure () being formed in the semiconductor body between the pump radiation source () and the quantum well structure ().

Semiconductor optical pumping device for radiation emission and the production method thereof

A laser device having a semiconductor body (), which has a plurality of active layers () arranged vertically one above the other and serving for generating laser radiation. The active layers are subdivided in the transverse direction into a plurality of emission zones () and are electrically connected in series in the vertical direction. The semiconductor body () is formed in monolithic integrated fashion, and a cooling element () is provided on which the semiconductor body () is arranged.

Laser device having a plurality of emission zones

A device for emission of laser radiation includes at least one semiconductor laser having a resonator and a pumped active zone disposed within the resonator. The zone is subdivided into at least two spatially separated active zones by free-radiation regions without lateral wave guidance. Preferably, the laser is at least two semiconductor lasers disposed in series, a row, or a line, each having an antireflection coating on at least one side. The lasers have outer mirror elements at an end of the lasers disposed in series and the outer mirror elements form the resonator. A laser configuration includes two opposite semiconductor lasers from which a fundamental mode is in each case imaged into the active zone of the opposite semiconductor laser. The laser configuration has an emerging laser beam with little divergence.

Multipartite laser

The present invention relates to an arrangement of semiconductor diode lasers stacked on top of one another, which is arranged on a substrate (). A first diode laser () is arranged on the substrate (), and a second diode laser () is arranged on the first diode laser (). Between the first diode laser () and the second diode laser () there is a contact layer (). The contact layer () comprises a first conductive layer () of a first conduction type and a second conductive layer () of a second conduction type and an interlayer () which is arranged between the first and second conductive layers ().

Stacked semiconductor laser diode

In an optically pumpable surface-emitting semiconductor laser device with a vertical emitter with a radiation-generating active layer, at least one modulation radiation source for modulating the output power of the surface-emitting semiconductor device is provided. The modulation radiation source is formed by an edge-emitting semiconductor structure with an active layer, and which is disposed such that during operation it radiates into the radiation-generating active layer of the vertical emitter. This produces an easily modulatable surface-emitting laser source of high power and high beam quality. A pumping radiation source for optically pumping the active layer of the vertical emitter is preferably provided in the semiconductor laser device.

Optically pumpable surface-emitting semiconductor laser device

A semiconductor laser has a semiconductor body with first and second main areas, preferably each provided with a contact area, and also first and second mirror areas. An active layer and a current-carrying layer are formed between the main areas. The current-carrying layer has at least one strip-type resistance region, which runs transversely with respect to the resonator axis and whose sheet resistivity is increased at least in partial regions compared with the regions of the current-carrying layer that adjoin the resistance region.

Semiconductor laser with lateral current conduction and method for fabricating the semiconductor laser

According to the invention, a semiconductor component for the emission of electromagnetic radiation, especially light, is made that has the following features: an active layer for producing radiation, a p-type contact that is electrically connected to the active layer, an n-type contact that is electrically connected to the active layer, and a current-confining structure to define a current path, with the current-confining structure being provided between the n-type contact and the active layer.

Semiconductor component for the emission of electromagnetic radiation and method for production thereof

A semiconductor laser device having a multiplicity of individual lasers disposed in a laser-active region within outer boundary surfaces having front and rear boundary surfaces extending crosswise to an exit direction of the laser light, and lateral, bottom and top boundary surfaces extending parallel to the exit direction of the laser light, includes an absorption layer for decoupling photons interfering with desired laser operation, the absorption layer being applied full-surface to all of the outer boundary surfaces of the laser device, except for the laser-active region for at least one of the front and the rear boundary surfaces, respectively, extending crosswise to the exit direction of the laser light, and except for a relatively few locations remaining free for disposing terminal electrodes thereon or for introducing pump light thereat.

Semiconductor laser device

A radiation emitter component, in particular an infrared emitter component with a conventional light-emitting diode housing, includes two electrode connections, one of which has a well-shaped reflector. The housing has an optically transparent, electrically non-conducting encapsulation material. A semiconductor laser chip is fastened in a well-shaped reflector of the light-emitting diode housing. The semiconductor laser chip has a quantum well structure, in particular with a strained layer structure, for example MOVPE epitaxial layers with a layer sequence GaAlAs-InGaAs-GaAlAs. A diffusor material can be inserted into the optically transparent, electrically non-conducting material of the light-emitting diode housing. The diffusor material is constructed or inserted with regard to type and concentration in such a way that in connection with the semiconductor laser chip encapsulated in the light-emitting diode housing, a radiation characteristic curve or an increase of an effective emission surface is produced that is comparable to that of a conventional infrared light-emitting diode.

Growing community of inventors

Wolfsegg, Germany

Johann Luft