Daimler Chrysler Ag

Daimler-benz Ag

Licentia Patent-verwaltungs Gmbh

Johann-Friedrich Luy

Helmut Jorke

Thomas Mueller

Konrad Boehm

Karl Strohm

Wolfgang Behr

Konrad B&ouml;hm

Thomas M&uuml;ller

Thomas Müller

Rainer Gotzfried

Konrad Bohm

Stephan Mayer

Erwin Biebl

Günter Reichert

In a first embodiment, the invention relates to an arrangement for operating a plurality of terminal devices () on a common antenna () with a coupling network () comprising a first separator () associated with the antenna () and a second separator () associated with the respective terminal (). In a second embodiment, the invention relates to an arrangement for operating a plurality of terminal devices () on a common transmitting antenna () and on a common receiving antenna () which is separate from the common transmitting antenna () with a coupling network () comprising a separator () which is associated with the respective terminal.

Arrangement for operating various terminal devices

A method of receiving data signals having identical contents and different frequencies. The frequency position of the data signals is analyzed by means of an FFT, and the signals are down-converted to the same intermediate frequency. The frequencies are selected such that the partial waves are constructively superpositioned, thereby improving the signal-noise ratio in the sum.

Multi-frequency superposition receiver method

A method for analog-to-digital conversion of an analog signal includes decomposing the signal in the time domain into intervals, and transforming these intervals one after another using orthogonal functions, the coefficients corresponding to the orthogonal functions being defined and digitized. The transformed signal is then inversely transformed in the digital domain using the digitized coefficients and the same or different orthogonal functions. A high level of performance with respect to bandwidth and resolution may be achieved.

Method and device for analog-to-digital conversion of a signal

A method for digital-to-analog conversion of a digital signal (x (t )) comprises resolving the signal (x (t )) in the time region into intervals and successively transforming these intervals on the basis of orthogonal functions (g (t)). Coefficients (a ) associated with the orthogonal functions (g (t)) are determined and converted from digital to analog and the signal (x (t)) is transformed back in the analog region on the basis of analog coefficients (a ), which result therefrom, by means of orthogonal functions (h (t)).

Method and device for digital-to-analog conversion of a signal

A silicon-germanium heterobipolar transistor has a silicon emitter,, a silicon-germanium base,and a silicon collector,such that, starting from the emitter,, the base,includes a change in the Ge content in the form of a step-wise increase, and a likewise step-wise, but opposing, change in the doping concentration, with a step height that is larger, seen in terms of energy, than the energy of the optical phonon energy of the semiconductor material.

Silicon-germanium heterobipolar transistor with a step-wise graded base

An active receiving antenna for vehicles, including a slot-shaped antenna cut into the metallic vehicle body, and having small-depth cavity filled with a dielectric material which closes off the antenna toward the back or interior of the vehicle. A low-noise preamplifier, which is integrated into the dielectric material, is connected to the antenna via two feed lines of different length. The desired polarizations of the received signals are set via this preamplifier, which can be changed over and be switched off.

Active receiving antenna

A transmit-receive switch which can be integrated. The receive diplexer of the switch comprises a parallel resonant circuit which can be completed or connected into the switch via a heterobipolar transistor. The transmit diplexer includes a series resonant circuit or a parallel resonant circuit which is connected into the switch circuit via a further heterobipolar transistor. Each of the heterobipolar transistors is rendered conductive or non-conductive via the applied HF power. That is, a high HF power, as is present in the transmission case, causes the respective transistor to become conductive and via the respective resonant circuits, cause the receive diplexer to become high impedance and block any signal, and cause the transmit diplexer to become low impedance and pass the high HF power substantially undampened. Conversely if the power is low, as is present in the reception case, the respective transistors become blocking and via the respective resonant circuits cause the receiver diplexer to become low impedance and conduct the received energy substantially undampened to a receiver, and cause the transmit diplexer to block the passage of the received power to a transmitter.

Transmit-receiver switch

A method for manufacturing semiconductor components contactable on both sides, in particular IMPATT diodes. The active silicon layers of the IMPATT diode are grown onto a silicon substrate. The first silicon layer grown onto the silicon substrate has a high boron/germanium doping level and acts as an etch atop layer when the substrate is removed. The boron/germanium doping of the first silicon layer compensates for the mechanical stress in the silicon layer generated by the boron doping.

Method for manufacturing a semiconductor component contactable on both

An IMPATT diode having Si-SiGe heterostructure grown on a Si substrate with the SiGe layer being disposed in the generation zone of the IMPATT diode. The SiGe layer may be replaced by a Si/SiGe superlattice.

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Ulm, Germany

Johann-Friedrich Luy