Ihp Gmbh-Innovations for High Performance Microelectronics/leibniz-Institut Fur Innovative Mikroelektronik

Ihp Gmbh - Innovations for High Performance Microelectronics

Electronics and Telecommunications Research Institute

Sicoya Gmbh

Universität Paderborn

Ihp, Gmbh

Johann Christoph Scheytt

Wolfgang Mehr

Grzegorz Lupina

Jaroslaw Dabrowski

Jae Ho Jung

Bong Hyuk Park

Sung Jun Lee

Gunther Lippert

Mehmet Kaynak

Stephan Kruse

Ruoyu Wang

Yaoming Sun

Pylyp Ostrovskyy

Max Lemme

Sergiy Gudyriev

Yevgen Borokhowych

The invention relates to an electro-optical mixer having an electrical output, the electro-optical mixer including:

Electro-optical mixer

The invention relates to a circuit containing a transimpedance amplifier for converting two input currents into two output voltages, having a first amplifier part containing a first input, to which a first input voltage is applied, and into which a first input current flows, and having a second amplifier part containing a second input, to which a second input voltage is applied and into which a second input current flows, wherein the first amplifier part and the second amplifier part are connected to a common supply voltage, the first amplifier part and the second amplifier part are connected to a common current source, the input of the first amplifier part and the input of the second amplifier part have a differing direct voltage, and the first amplifier part and the second amplifier part are designed such that an output voltage of the first amplifier part is proportional to the input current of the first amplifier part and an output voltage of the second amplifier part is proportional to an input current of the second amplifier part.

Transimpedance amplifier circuit

A chip antenna comprising at least one emitter which extends parallel to a main surface of a semiconductor substrate supporting the chip antenna, wherein the emitter is arranged on an island-like support zone of the semiconductor substrate, the support zone being surrounded by at least one trench which is completely filled with a gas, the trench passing through the entire depth of the semiconductor substrate and being bridged by at least one retaining web which forms a supporting connection between the support zone and the rest of the semiconductor substrate.

Chip antenna, electronic component, and method for producing same

A junction transistor, comprising, on a substrate an emitter layer, a collector layer, and a base layer that comprises a graphene layer, wherein an emitter barrier layer is arranged between the base layer and the emitter layer, and a collector barrier layer is arranged between the base and the collector layers and adjacent to the graphene layer, characterized in that the collector barrier layer is a compositionally graded material layer, which has an electron affinity that decreases in a direction pointing from the base layer to the collector layer.

Graphene base transistor having compositionally-graded collector barrier layer

A digital polar modulator (DPM) for transforming a baseband signal into a modulated digital modulator output signal comprises an input unit and two low-pass delta-sigma modulators, a first one being connected downstream from the first input part and configured to provide at its output a first pulse train in dependence on an amplitude- modulating baseband signal component, and a second one being connected downstream from the second input part and configured to provide at its output a multilevel quantized signal in dependence on a phase modulating baseband signal component; a multiphase generator, which is configured to provide a set of square-wave carrier signals having a common carrier frequency and exhibiting discrete phase shifts with respect to each other; a multiplexer, which is configured to provide a multiplexer output signal that is formed by switching, in dependence on a signal received at a select input as a function of time, between selected ones of the carrier signals; and a combiner unit.

Digital polar modulator for a switch mode RF power amplifier

A hot hole transistor with a graphene base comprises on a substrate an emitter layer, a collector layer, and a base layer that comprises a graphene layer, wherein an emitter barrier layer is arranged between the base layer and the emitter layer, and a collector barrier layer is arranged between the base and the collector layers and adjacent to the graphene layer.

P-type graphene base transistor

The present invention relates to a device () and a method for encoding an input signal () into a digital pulse-width and/or phase modulated output signal (). The present invention also relates to a transmission method, a power amplifier and a transmitter. With the aid of a mapping process comprising at least three-stages, a sequence of output pulses () is generated which corresponds on average over time to a theoretical, previously computed target pulse. In this way, the device () or the method can be digitally implemented and a large part () of the device () can also be operated at a clock rate that is substantially lower than a clock rate of the output signal generator ().

Method and device for phase and/or pulse-width modulation

The invention relates to an upstream unit () for a switched power amplifier () for a high-frequency transmission circuit (). The upstream unit () supplies a pulse-length modulated HF pulse signal () to the switched power amplifier (), wherein the linearity of the pulse length modulation and of the high-frequency transmission circuit is improved. The upstream unit () according to the invention has a first signal input () for a high-frequency, phase-modulated first input signal (), a second signal input () for a second input signal () having a low frequency in comparison with the first input signal, a controllable first delay unit (), a controllable second delay unit (), a pulse generator () and a control unit ().

Growing community of inventors

Frankfurt-am-Main, Germany

Johann Christoph Scheytt