Infineon Technologies Ag

Johan Sjöström

Andreas Wiesbauer

Peter Singerl

Torkel Bengt Arnborg

Thomas Pötscher

A baseband signal is processed by amplifying a first pulse width modulation radio frequency signal having a first non-negligible peak-to-peak amplitude and a second non-negligible peak-to-peak amplitude larger than the first non-negligible peak-to-peak amplitude. A second pulse width modulation radio frequency signal is also amplified, the second pulse width modulation radio frequency signal having a third non-negligible peak-to-peak amplitude approximately equal to the second non-negligible peak-to-peak amplitude of the first pulse width modulation signal when the baseband signal power is at or above the second threshold level. The amplified signals are constructively combined to form a pulse width modulation radio frequency signal comprising a plurality of non-negligible peak-to-peak amplitude levels each corresponding to a different baseband signal power range.

Multi-level pulse width modulation power amplifier method and apparatus

A signal is modulated by generating a pulse-width modulation signal and applying the pulse-width modulation signal to an input of a switched-mode amplifier. An output of the amplifier is coupled to a filter operable to impart either differential mode oscillations or common mode oscillations at the amplifier output based on the duty cycle of the pulse-width modulation signal. The duty cycle of the pulse-width modulation signal is varied to impart amplitude modulations at the amplifier output.

Amplifier modulation method and apparatus

A differential transistor pair comprises a plurality of transistor cells in a substrate. Each cell comprises first drain regions at the respective edge of the cell, and a second drain region in between. Source regions are located between the respective first drain region and the second drain region. First gate regions are located between the respective first drain region and the source regions, and second gate regions are located between the source regions and the second drain region. The first drain regions of all cells are interconnected to a common first drain terminal, and the second drain region of all cells are interconnected to a common second drain terminal. The first gate regions of all cells are interconnected to a common first gate terminal, and the second gate regions of all cells are interconnected to a common second gate terminal.

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Tyresö, Sweden

Johan Sjöström