Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Commissariat a L'energie Atomique

Johan Rothman

Laurent Mollard

Nicolas Baier

Olivier Gravrand

Ivan-Christophe Robin

Roch Espiau De Lamaestre

Giacomo Badano

Pierre Ferret

Francois Boulard

Florent Rochette

Jean-Paul Chamonal

David Fowler

Eric De Borniol

François Boulard

An avalanche photodiode including an absorption region, a collection region and a multiplication region between the absorption region and the collection region that performs a carrier multiplication by impact ionisation of a single type of carrier. The multiplication region includes a plurality of multilayer structures where each multilayer structure includes, from the absorption region to the collection region, an acceleration layer having a first energy band gap then a multiplication layer having a second energy band gap. The first energy band gap is greater than the second energy band gap.

Sam photodiode with multiplication of a single type of carrier in a periodic multilayer region

The invention relates to a metasurface lens using a planar array of elementary resonators, each elementary resonator being the shape of a cross the arms of which are of unequal length. The phase shift applied by an elementary resonator is dependent on its orientation in the plane of the lens, the orientation of the various elementary resonators being determined depending on the shape of the desired wavefront. Such a lens has a substantially uniform transmission-coefficient distribution and a low chromatic aberration. Furthermore, it has a very good spectral selectivity.

Lens with focusing metasurface and low chromatic aberration

A photodetection device and a method for manufacturing the device, the device including a substrate and an array of diodes, the substrate including an absorption layer including a first type of doping, and each diode including, in the absorption layer, a collection region including a second type of doping opposite to the first type. The device further includes, under the surface of the substrate, a conductive mesh including at least one conductive channel inserted between the collection regions of two adjacent diodes, the at least one conductive channel including the first type of doping and a higher doping density than the absorption layer. The doping density of the at least one conductive channel is the result of a diffusion of metal in the absorption layer from a metal mesh provided on the surface of the substrate.

Photodetection device which has an inter-diode array and is overdoped by metal diffusion and manufacturing method

A photodetection device including a diode array and a method for production thereof. In the device, each diode of the array includes an absorption region having a first bandgap energy and a collection region having a first doping type, and adjacent diodes in a network are separated by a trench including sides and a bottom. The bottom and sides of the trench form a stabilization layer having a second doping type, opposite the first doping type, and a bandgap energy greater than the first bandgap energy of the absorption regions.

Photodetection device having a coating comprising trenches with a wide bandgap coating and production method

A structure of the avalanche photodiode type includes a first P doped semiconducting zone, a second multiplication semiconducting zone adapted to supply a multiplication that is preponderant for electrons, a fourth P doped semiconducting 'collection' zone. One of the first and second semiconducting zones forms the absorption zone. The structure also includes a third semiconducting zone formed between the second semiconducting zone and the fourth semiconducting zone. The third semiconducting zone has an electric field in operation capable of supplying an acceleration of electrons between the second semiconducting zone and the fourth semiconducting zone without multiplication of carriers by impact ionisation.

Avalanche photodiode type structure and method of fabricating such a structure

The invention relates to a photodetection device comprising a substrate and a diodes network, the substrate comprising an absorption layer and each diode comprising a collection region with a first type of doping in the absorption layer. The device comprises a conduction mesh under the surface of the substrate, comprising at least one conduction channel inserted between the collection regions of two adjacent diodes, the at least one conduction channel having a second doping type opposite the first type and a higher doping density than the absorption layer. The doping density of the at least one conduction channel is derived from metal diffusion in the absorption layer from a metal mesh present on the substrate surface. The absorption layer has the first doping type. The invention also relates to a method of making such a device.

Photodetection device with overdoped interdiode network and manufacturing method

A semiconducting structure configured to receive electromagnetic radiation, a method for manufacturing such a structure, and a semiconductor component, the semiconductor structure including: a first semiconducting area of a first type of conductivity, a second semiconducting area of a second type of conductivity opposite to the first type of conductivity, the second area being in contact with the first area to form a semiconducting junction. The second area includes a portion for which a concentration of majority carriers is at least ten times less than a concentration of majority carriers of the first area. The second area and its portion are essentially made in a first cavity configured to focus in the first cavity at least one portion of the electromagnetic radiation.

Semiconductor structure comprising an absorbing area placed in a focusing cavity

A method of manufacturing a photodiode including a useful layer made of a semi-conductor alloy. The useful layer has a band gap value which decreases from its upper face to its lower face. A step of producing a first doped region forming a PN junction with a second doped region of the useful layer, said production of a first doped region including a first doping step, so as to produce a base portion; and a second doping step, so as to produce at least one protuberance protruding from the base portion and in the direction of the lower face.

Method of manufacturing a low noise photodiode

A semiconductor structure, and method for manufacturing, of avalanche photodiode type for receiving electromagnetic radiation in a given wavelength range and including a first semiconductor area configured for absorption of the electromagnetic radiation, a second area configured for providing a multiplication of carriers, and a third semiconductor area in contact with the second semiconductor area. The second area includes at least two subparts with the second subpart configured to have a mean carrier multiplication rate that is more substantial than that of the first subpart.

Avalanche photodiode semiconductor structure having a high signal-to-noise ratio and method for manufacturing such a photodiode

A device includes a substrate carrying an array of diodes, organized in rows and columns, and a peripheral substrate contact is arranged on at least one side of the array. The substrate includes one or more buried conducting lines electrically connected to the peripheral substrate contact and being positioned between at least two neighboring columns of diodes and/or between at least two neighboring rows of diodes.

Access-resistant diode array device having enhanced stability

The invention relates to a device comprising a substrate supporting a matrix of diodes organized in rows and columns, and a peripheral substrate contact is arranged on at least one side of the matrix, characterized in that the substrate comprises one or several buried conducting lines having no direct electrical connection with the peripheral substrate contact and being positioned between at least two adjacent columns of diodes and between at least two adjacent rows of diodes.

Diode matrix device with enhanced stability

A device including at least one heterostructure p/n diode, including a substrate based on HgCdTe including for each diode: a first part having a first cadmium concentration; a concentrated part, having a second cadmium concentration, greater than the first concentration, forming a heterostructure with the first part; a p+ doped zone situated in the concentrated part and extending into the first part, forming a p/n junction with an n-doped position of the first part, or a base plate; and the concentrated part is only located in the p+ doped zone and forms a substantially constant cadmium concentration well.

P-N diode having a controlled heterostructure self-positioned on HgCdTe, for infrared imagers

Avalanche diode-type semiconductor structure () intended to receive electromagnetic radiation in a given wavelength. The structure () comprises a semiconductor multiplication zone () including a majority carrier concentration, and delimitation means suitable for laterally delimiting the multiplication zone (). The delimitation means comprise a semiconductor zone () surrounding the multiplication zone () and comprising a forbidden energy gap greater than the forbidden energy gap of the major part () of the multiplication zone (), said zone () having a type of conductivity opposite that of the multiplication zone () with a majority carrier concentration at least 10 times greater than that of the multiplication zone (). The invention also relates to a process for producing an avalanche photodiode-type semiconductor structure.

Avalanche photodiode-type semiconductor structure and process for producing such a structure

The invention relates to an avalanche photodiode-type semiconductor structure () intended to receive electromagnetic radiation in a given wavelength. The structure comprises a first semiconductor zone () with a first type of conductivity with a first longitudinal face (), said first zone () being made of mercury-cadmium telluride of the CdHgTe type with a cadmium proportion x that is varied. The structure () also comprises at least one second semiconductor zone () in contact with the first zone (), and a third semiconductor zone () in contact with the second zone (). The first zone () comprises a doping element, such as arsenic, of which the concentration is varied alternately in a direction substantially perpendicular to the first longitudinal face () between a so-called low concentration and a so-called high concentration. The invention also relates to a process for producing a structure () according to the invention.

Avalanche photodiode-type semiconductor structure with low response time and process for producing such a structure

A photodetector with internal gain comprising a semiconductor structure in which impact ionization events are produced mostly by minority charge carriers; a first biasing contact and a second biasing contact located in the semiconductor structure; a means of defining, in the semiconductor structure, a photon collection region close to first biasing contact; a P-N type junction formed in the semiconductor structure between the two biasing contacts and close to the second biasing contact; and a collector contact which is located in the P-N junction and used to collect current in the P-N junction.

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Grenoble, France

Johan Rothman