U.S. Philips Corporation

Johan P Duchateau

Johannes H Spruit

James H Coombs

Gerrit J Van Der Kolk

Guofu F Zhou

Gijsbert Joseph Van Den Enden

Bernardus A Jacobs

Guo-Fu Zhou

Andries R Miedema

Alec H Reader

Johannes H Jaegers

The device according to the invention is suitable for recording a rewritable information carrier such a CD-E covered by a phase-change recording layer. As is known, such an information carrier has a limited useful life because the recorded, optically readable patterns start deviating ever more from the desired form when recorded recurrently. The invention is also based on the recognition that this degradation is accelerated if a certain part of the track on the information carrier constantly accommnodates the same patterns, for example, if information blocks are recorded starting from fixed initial positions and the information is represented by the patterns in a specific manner. The device comprises means for shifting the initial position along the track over a distance randomly selected within predefined boundaries and/or for adapting the manner of representation. This causes constantly different patterns to be recorded, even if the same information is to be recorded in a specific part of the track. The information carrier described according to the invention has an additional margin between the information blocks to allow of the shifting of the initial position.

Modifying the recording process to extend the life of a rewritable

An optical recording medium having a recording layer with grooves that define recording tracks. The structure of unwritten tracks enable a scanning device to derive a radial tracking error signal using the push-pull method. The structure of the written tracks enable the scanning device to derive a radial tracking error signal using the high-frequency phase-detection method. The width of the groove is in the range from 0.3 to 0.6 time the wavelength over the numerical aperture for scanning the recording medium. The depth of the groove is in the range from 1/24 to 1/7 times the wavelength for scanning the recording medium. The phase difference between a radiation beam reflected from a track at a mark and a radiation beam reflected from that track in a region between written marks is in the range from 0.4 to 2.0 radians.

Optical recording medium

A description is given of an reversible optical information medium comprising a substrate, a first dielectric layer, a phase-change recording layer on the basis of Ge--Sb--Te, a second dielectric layer, and a metal mirror layer. The recording layer comprises an alloy having the composition Ge.sub.50x Sb.sub.40-40x Te.sub.60-10x in atom %, wherein

Reversible optical information medium

A description is given of an reversible optical information medium comprising a substrate (1), a first dielectric layer (2), a phase-change recording layer on the basis of Ge-Sb-Te (3), a second dielectric layer (4), and a metal mirror layer (5). The recording layer (3) comprises an alloy having the composition Ge.sub.50x Sb.sub.40-40x Te.sub.60-10x, in atom %, wherein

A method is described for recording an optical information carrier, in which marks representing recorded data are written at different writing speeds by radiation pulse of equal length and power, independent of the writing speed. The number of pulses per unit length of the written mark is a constant independent of the writing speed.

Method and device for recording a mark having a substantially constant

A method of manufacturing a semiconductor device whereby a layer (12) containing Co or Ni is deposited on a surface (2) of a semiconductor body (1) bounded by silicon regions (3, 4, 5, 6) and regions of insulating material (8, 9), after which the semiconductor body (1) is heated during a heat treatment to a temperature at which the Co or Ni forms a metal silicide with the silicon (3, 4, 5, 6), but not with the insulating material (8, 9). On the surface (2) of the layer (12) containing the Co or Ni, according to the invention, a layer of an amorphous alloy of this metal with a metal from a group comprising Ti, Zr, Ta, Mo, Nb, Hf and W is deposited, while furthermore the temperature is so adjusted during the heat treatment that the layer (12) of the amorphous alloy remains amorphous during the heat treatment. In this way a metal silicide is formed on the silicon regions (3, 4, 5, 6) only and not on the regions of insulating material ( 8, 9) directly adjoining them; in other words, the method yields a self-aligned metal silicide.

Method of manufacturing a semiconductor device whereby a self-aligned

A device comprising semiconductor elements and conductor tracks of an oxidic superconducting material, electrically conductive connections being formed between semiconductor elements and conductor tracks, is provided with an electrically conductive antidiffusion layer between the semiconductor elements and the conductor tracks. The antidiffusion layer is composed of an amorphous alloy having the composition A.sub.x E.sub.1-x, wherein A is selected from one or more of the elements Zr, Nb, Mo, Ru, Rh, Pd, Hf, Ta, W, Re, Os, Ir and Pt, wherein E is selected from one or more of the elements B, Si, Al, Ga and Ge, and wherein x has a value of from 0.7 to 0.95.

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Eindhoven, Netherlands

Johan P Duchateau