U.S. Philips Corporation

Koninklijke Philips Corporation N.v.

Johan G De Bruin

Reinhold Wimberger-Friedl

Reinhold Wimberger Friedl

Hugo Johan Cornelissen

Jan Haisma

Gijsbertus A Spierings

Theodorus Martinus Michielsen

Cornelis L Adema

Jakob W Mulder

Peter Paul Koets

Harmannus F Schoo

A collimator for use in an optical device, such as a display device, includes a multi-layered sheet of at least five alternating light transmitting and light impervious layers. A collimation angle of a few degrees is obtainable using the collimator. The collimator may be produced by co-extruding or injection molding.

Multi-layered collimator

A method is provided for producing a grid structure using an extrusion process. In order to extrude a layered structure exhibiting a high aspect ratio, a multiplication die is used. Such a method is also suited to manufacture X-ray scatter grids, which include X-ray absorbing and X-ray transmitting regions. The X-ray scatter grid is designed to be used in an X-ray examination apparatus.

Method for producing a grid structure

A method of manufacturing a ceramic multilayer component, comprising electrically conductive and electrically insulating layers which are stacked in alternate arrangement in a multilayer structure, which method comprises the following steps:

Method of manufacturing a multilayer electronic component

A polycarbonate copolymer of a spirobisindan (6,6'-dihydroxy-3,3,3',3'-tetramethyl-1,1'-spirobisindan) and bisphenol-A in which the mole fraction of the spirobisindan .alpha. ranges between 0.844 and 0.887 is provided. Such a copolymer has a stress-optical coefficient C.sub.m in the melt which is equal to zero or substantially equal to zero, so that the sensitivity of the polymer to orientation birefringence is very small. Such a copolymer can be rendered optically isotropic and is very suitable for use in optical components in which birefringence is undesirable. Examples of such optical components are lenses and substrates for optical information media.

Polycarbonate copolymer of spirobisindan and bisphenol-A, method of

A method of manufacturing a silicon-on-insulator semiconductor body is characterized by the steps consisting in that a carrier body is temporarily connected to a supporting body with accurately flat and parallel major surfaces and having a thickness of at least 1/8 of the largest dimension of the carrier body, in that the free major surface of the carrier body is mechanically polished to a precision of at least 1/2 .mu.m flatness, in that the carrier body is detached from the supporting body and the polished major surface is temporarily connected to the supporting body and the other major surface of the carrier body is mechanically polished to a precision of at least 1/2 .mu.m flatness and a parallelism between the major surfaces of at least 1/2 .mu.m whereupon a semiconductor body is connected through a major surface permanently to a major surface of the carrier body, in that then the semiconductor body is mechanically ground to a thickness of at least 50 .mu.m larger than the desired ultimate layer thickness and is then alternately polished tribochemically and mechanically to a thickness of about 10 .mu.m larger than the ultimately desired layer thickness, and in that there is ultimately polished tribochemically until the desired layer thickness of the semiconductor body is attained.

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Eindhoven, Netherlands

Johan G De Bruin