Imec

Johan Dekoster

Matty Caymax

Roger Loo

Benjamin Vincent

The present disclosure is related to a method for the deposition of a continuous layer of germanium on a substrate by chemical vapor deposition. According to the disclosure, a mixture of a non-reactive carrier gas and a higher order germanium precursor gas, i.e. of higher order than germane (GeH), is applied. In an example embodiment, the deposition is done under application of a deposition temperature between 275&#xb0; C. and 500&#xb0; C., with the partial pressure of the precursor gas within the mixture being at least 20 mTorr for temperatures between 275&#xb0; C. and 285&#xb0; C., and at least 10 mTorr for temperatures between 285&#xb0; and 500&#xb0; C.

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Herent, Belgium

Johan Dekoster