Imec

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Interuniversitair Microelektronica Centrum (imec)

Imec Vzw

Katholieke Universiteit Leuven, Ku Leuven R&d

Johan Das

Périne Jaffrennou

Wouter Ruythooren

Angel Uruena De Castro

The invention relates to the manufacturing process of a solar cell () with back contact and passivated emitter, comprising a dielectric stack () of at least two layers consisting of at least a first dielectric layer () made of AlOx in contact with a p-type silicon layer (), and a second dielectric layer () deposited on the first dielectric layer (). Besides, the method of manufacturing comprising a formation step of at least one partial opening () preferably by laser ablation into the dielectric stack (), sparing at least partially the aforementioned first dielectric layer.

Method of manufacturing a solar cell with local back contacts

The present invention is related to a method of producing a semiconductor device and the resulting device. The method is suitable in the first place for producing high power devices, such as High Electron Mobility Transistors (HEMT), in particular HEMT-devices with multiples source-gate-drain groups or multiple base bipolar transistors. According to the method, the interconnect between the source contacts is not produced by air bridge structures, but by etching vias through the semiconductor layer directly to the ohmic contacts and applying a contact layer on the backside of the device.

Semiconductor device having interconnected contact groups

Method for producing a semiconductor device and resulting device

Growing community of inventors

Nieuwrode, Belgium

Johan Das