Hitachi, Ltd.

Centre National De La Recherche Scientifique

Hitachi Global Storage Technologies Netherlands B.v.

Université Paris Sud Xi

Cambridge Enterprise Limited

University of Nottingham

Université Paris—sud

Institute of Physics Ascr V. V. I.

Joerg Wunderlich

David Arfon Williams

Tomas Jungwirth

Bruce Alvin Gurney

Ernesto Esteban Marinero

Claude Chappert

Thibaut Devolder

Andrew Stuart Troup

Bryan Gallagher

Jan Zemen

Andrew Irvine

Andrew Ferguson

Frantisek Maca

Alexander Shick

Byong Guk Park

Jairo Sinova

Brian Gallagher

Fernando Gonzalez Zalba

Chiara Ciccarelli

Xavier Marti

Rubén Otxoa

Joao Godinho

Jakub Zelezny

Peter Wadley

Kevin Edmonds

Tomas Janda

Pierre Roy

David Williams

John Armitage

Deepak Venkateshvaran

Richard Campion

A method of operating a magnetoresistive device is described. The device comprises a ferromagnetic region configured to exhibit magnetic anisotropy and to allow magnetisation thereof to be switched between at least first and second orientations and a gate capacitively coupled to the ferromagnetic region. The method comprises applying an electric field pulse to the ferromagnetic region so as to cause orientation of magnetic anisotropy to change for switching magnetisation between the first and second orientations.

Magnetoresistive device

A device comprising a channel for charge carriers comprising non-ferromagnetic semiconducting in which charge carriers exhibit spin-orbit coupling, a region of semiconducting material of opposite conductivity type to the channel and configured so as to form a junction with the channel for injecting spin-polarized charge carriers into an end of the channel and at least one lead connected to the channel for measuring a transverse voltage across the channel.

Spin-polarised charge-carrier device

Method of controlling a magnetoresistive device using an electric field pulse

A Lorentz Magnetoresistive sensor having an extremely small lead width and lead spacing is disclosed. The sensor can be constructed by a novel fabrication method that allows the leads to be deposited in such a manner that lead width and spacing between the leads is determined by the as deposited thicknesses of the lead layers and electrically insulating spacer layers between the leads rather than by photolithography. Because the lead thicknesses and lead spacings are not defined photolithograhically, the lead thickness and lead spacing are not limited by photolithographic resolution limits.

Fabrication of mesoscopic lorentz magnetoresistive structures

A Lorentz magnetoresistive sensor having integrated signal amplification. The sensor is constructed upon a substrate such as a semiconductor material, and an amplification circuit such as transistor is constructed directly into the substrate on which the magnetoresistive device is constructed. This integrated signal amplification greatly enhances sensor performance by eliminating a great deal of signal noise that would otherwise be added to the read signal.

Lorentz magnetoresistive sensor with integrated signal amplification

A magnetoresistive device comprises a ferromagnetic region, a non-ferromagnetic region, an insulating region and a conductive region. The insulating region is arranged between the ferromagnetic region and the conductive region so as to provide a tunnel barrier. The non-ferromagnetic region separates the insulating region and the ferromagnetic region.

A magnetic memory device based on easy domain wall propagation and the extraordinary Hall effect includes a perpendicular-to-plane a magnetic electrically conductive element ( ) that includes a memory node ( ). Electrical conductors ( ) surround the node ( ) so that when energised, a magnetic field is produced to change the magnetization state of the node ( ). In memory state &ldquo;0&rdquo; a magnetic domain is pinned within tapered portion ( ) of the element ( ). When a magnetic field is applied to the device, the domain (D) becomes unpinned and extends into the node ( ) to produce a &ldquo;1&rdquo; state. The state of magnetization is sensed by means of a Hall contact ( ). The current pulse (J ) is applied through the element ( ) so that the Hall voltage can be detected.

Magnetic memory cell

Growing community of inventors

Cambridge, United Kingdom

Joerg Wunderlich